Patent
SYNTHETIC METHODS FOR GENERATING WS₂ NANOSTRUCTURED MATERIALS
US
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FIG. 1 shows a schematic illustration of an exemplary experimental set up to synthesize WS₂ nanostructures in accordance with the present teachings. [0012]
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
FIG. 8 shows exemplary nanoindentation curves 17 Attorney Docket: 0023.0087 Client Ref: UNM-851 for the two composites samples of Example 6. Oliver-Phar …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a nanostructured material comprising: providing a plurality of precursor materials, wherein each of the plurality of precursor materials comprises a tu n gsten reactant; and flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 t C to about 1000 0 C, wherein the reaction time is sufficient to permit the tungsten reactant to react with carbon disulfide to form a plurality of tungsten disulfide (WS₂) nanostructures.
(Curr en tly Amended) The method of claim 1, w herein the step of providing a plurality of precursor materials comprises providing a plurality of precursor materials as liquid dispersions,.Qi ids, or aerosols.
The method of claim 1, wherein the step of flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 r C to about 1000 *C comprises flowing, for a reaction time, a substantially con t inuous stream of carbon disulfide (CS 2) vapor in a c a rri e r gas mixed with the plurality of precursor materials at a temperature in the range of about 700 0 C to about 1000 "C.
The method of claim 1, wherein the plurality of W S₂ nanostructures comprise one or more nanostructural for m s selected f r om the group consisting of fla k es, particles, fibers, tubes, rods, spheres (inorganic fullerene), and octahedral crystals.
The method of claim 1, w herein the plurality of WS₂ nanostructures comprise inorganic fulleren es li k e I FWS₂ spherical nanoparticles.
The method of claim 1, wherein the step of providing a plurality of precursor materials comprises pro v iding precursor materials having at least one dimension in the range of about nr m to about 20 pm.
The method of claim 1, wherein the tungsten reactant is selected f rom the group consisting of tungsten oxides[[,]J an tungsten salts [[,] an d-44iike.
(O riginal) ' The method of claim 1, wherein the carrier gas comprises one or more of argon and nitrogen.
The method of claim 1, wherein the reaction ti m e is at least about 20 minutes.
WS₂ nanostructures f or m ed using the method according to claim 1.
(Original) The m ethod of claim 1 further co m prisi n g adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to f o rm a nanostructured composite material.
A nanostructured composite mater i al co m prising: a major amount of one or more materials selected from the group consisting of metals, ceramics, and polymers; and a minor amount of WS₂ nanostructures formed using the method according to claim 1.
Th e method of claim 1 4 further comprising adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to form a nanostructured composite material.
A method for synthesizing a nanostructured material comp r ising: providing a plurality of precursor materials, wherein each of the pl u rality of precursor materials comprises a tungsten reactant; and flowing, in a plasma system, a substantially continuous stream of carbon disulfide (CS₂) vapor in a carrier gas over the plurality of precursor materials for a reaction time, wherein the reaction time is sufficient to permit the tungsten reactant to react wit h carbon disu l fide to fonn a plurality of tungsten disulfide (W S₂) nanostructures.
The method of claim 14, wherein the plasma system is selected from the group consisting of microwave plasma, RF plasma, and DC plasma.
The method of claim 14, wherein the plasma system uses a pressure in the near atmospheric range.
The method of claim 14 further comprising using the carrier gas comprising one or m ore of argon and nitrogen to create a plasma.
The method of claim 14, wherein the tungsten reactant is selected f r om the group consisting of tungsten oxides[[,] and tungsten salts[[,]] an dthe4-ike,
The method of claim 14, wherein the plurality of tungsten disulfide (WS₂) nanostructures comprises inorganic fullerene like IP-WS₂ spherical nanoparticles or nanotubes.
WS₂ nanostructures formed u sing t h e method according to claim 14.
A nanostructured composite material comprising: a major amount of one or more materials selected from the group consisting of metals, cera m ics, and poly m ers; and a minor am o unt of W S₂ nanostructures formed using the method according to claim 14.
Materials described outside the worked examples.
tungsten reactant (precursor)
carbon disulfide
CS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 44–80 nm | — |
Thickness | 20–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic illustration of an exemplary experimental set up to synthesize WS₂ nanostructures in accordance with the present teachings. [0012]
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
FIG. 8 shows exemplary nanoindentation curves 17 Attorney Docket: 0023.0087 Client Ref: UNM-851 for the two composites samples of Example 6. Oliver-Phar …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a nanostructured material comprising: providing a plurality of precursor materials, wherein each of the plurality of precursor materials comprises a tu n gsten reactant; and flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 t C to about 1000 0 C, wherein the reaction time is sufficient to permit the tungsten reactant to react with carbon disulfide to form a plurality of tungsten disulfide (WS₂) nanostructures.
(Curr en tly Amended) The method of claim 1, w herein the step of providing a plurality of precursor materials comprises providing a plurality of precursor materials as liquid dispersions,.Qi ids, or aerosols.
The method of claim 1, wherein the step of flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 r C to about 1000 *C comprises flowing, for a reaction time, a substantially con t inuous stream of carbon disulfide (CS 2) vapor in a c a rri e r gas mixed with the plurality of precursor materials at a temperature in the range of about 700 0 C to about 1000 "C.
The method of claim 1, wherein the plurality of W S₂ nanostructures comprise one or more nanostructural for m s selected f r om the group consisting of fla k es, particles, fibers, tubes, rods, spheres (inorganic fullerene), and octahedral crystals.
The method of claim 1, w herein the plurality of WS₂ nanostructures comprise inorganic fulleren es li k e I FWS₂ spherical nanoparticles.
The method of claim 1, wherein the step of providing a plurality of precursor materials comprises pro v iding precursor materials having at least one dimension in the range of about nr m to about 20 pm.
The method of claim 1, wherein the tungsten reactant is selected f rom the group consisting of tungsten oxides[[,]J an tungsten salts [[,] an d-44iike.
(O riginal) ' The method of claim 1, wherein the carrier gas comprises one or more of argon and nitrogen.
The method of claim 1, wherein the reaction ti m e is at least about 20 minutes.
WS₂ nanostructures f or m ed using the method according to claim 1.
(Original) The m ethod of claim 1 further co m prisi n g adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to f o rm a nanostructured composite material.
A nanostructured composite mater i al co m prising: a major amount of one or more materials selected from the group consisting of metals, ceramics, and polymers; and a minor amount of WS₂ nanostructures formed using the method according to claim 1.
Th e method of claim 1 4 further comprising adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to form a nanostructured composite material.
A method for synthesizing a nanostructured material comp r ising: providing a plurality of precursor materials, wherein each of the pl u rality of precursor materials comprises a tungsten reactant; and flowing, in a plasma system, a substantially continuous stream of carbon disulfide (CS₂) vapor in a carrier gas over the plurality of precursor materials for a reaction time, wherein the reaction time is sufficient to permit the tungsten reactant to react wit h carbon disu l fide to fonn a plurality of tungsten disulfide (W S₂) nanostructures.
The method of claim 14, wherein the plasma system is selected from the group consisting of microwave plasma, RF plasma, and DC plasma.
The method of claim 14, wherein the plasma system uses a pressure in the near atmospheric range.
The method of claim 14 further comprising using the carrier gas comprising one or m ore of argon and nitrogen to create a plasma.
The method of claim 14, wherein the tungsten reactant is selected f r om the group consisting of tungsten oxides[[,] and tungsten salts[[,]] an dthe4-ike,
The method of claim 14, wherein the plurality of tungsten disulfide (WS₂) nanostructures comprises inorganic fullerene like IP-WS₂ spherical nanoparticles or nanotubes.
WS₂ nanostructures formed u sing t h e method according to claim 14.
A nanostructured composite material comprising: a major amount of one or more materials selected from the group consisting of metals, cera m ics, and poly m ers; and a minor am o unt of W S₂ nanostructures formed using the method according to claim 14.
Materials described outside the worked examples.
tungsten reactant (precursor)
carbon disulfide
CS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 44–80 nm | — |
Thickness | 20–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic illustration of an exemplary experimental set up to synthesize WS₂ nanostructures in accordance with the present teachings. [0012]
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
FIG. 8 shows exemplary nanoindentation curves 17 Attorney Docket: 0023.0087 Client Ref: UNM-851 for the two composites samples of Example 6. Oliver-Phar …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a nanostructured material comprising: providing a plurality of precursor materials, wherein each of the plurality of precursor materials comprises a tu n gsten reactant; and flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 t C to about 1000 0 C, wherein the reaction time is sufficient to permit the tungsten reactant to react with carbon disulfide to form a plurality of tungsten disulfide (WS₂) nanostructures.
(Curr en tly Amended) The method of claim 1, w herein the step of providing a plurality of precursor materials comprises providing a plurality of precursor materials as liquid dispersions,.Qi ids, or aerosols.
The method of claim 1, wherein the step of flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 r C to about 1000 *C comprises flowing, for a reaction time, a substantially con t inuous stream of carbon disulfide (CS 2) vapor in a c a rri e r gas mixed with the plurality of precursor materials at a temperature in the range of about 700 0 C to about 1000 "C.
The method of claim 1, wherein the plurality of W S₂ nanostructures comprise one or more nanostructural for m s selected f r om the group consisting of fla k es, particles, fibers, tubes, rods, spheres (inorganic fullerene), and octahedral crystals.
The method of claim 1, w herein the plurality of WS₂ nanostructures comprise inorganic fulleren es li k e I FWS₂ spherical nanoparticles.
The method of claim 1, wherein the step of providing a plurality of precursor materials comprises pro v iding precursor materials having at least one dimension in the range of about nr m to about 20 pm.
The method of claim 1, wherein the tungsten reactant is selected f rom the group consisting of tungsten oxides[[,]J an tungsten salts [[,] an d-44iike.
(O riginal) ' The method of claim 1, wherein the carrier gas comprises one or more of argon and nitrogen.
The method of claim 1, wherein the reaction ti m e is at least about 20 minutes.
WS₂ nanostructures f or m ed using the method according to claim 1.
(Original) The m ethod of claim 1 further co m prisi n g adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to f o rm a nanostructured composite material.
A nanostructured composite mater i al co m prising: a major amount of one or more materials selected from the group consisting of metals, ceramics, and polymers; and a minor amount of WS₂ nanostructures formed using the method according to claim 1.
Th e method of claim 1 4 further comprising adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to form a nanostructured composite material.
A method for synthesizing a nanostructured material comp r ising: providing a plurality of precursor materials, wherein each of the pl u rality of precursor materials comprises a tungsten reactant; and flowing, in a plasma system, a substantially continuous stream of carbon disulfide (CS₂) vapor in a carrier gas over the plurality of precursor materials for a reaction time, wherein the reaction time is sufficient to permit the tungsten reactant to react wit h carbon disu l fide to fonn a plurality of tungsten disulfide (W S₂) nanostructures.
The method of claim 14, wherein the plasma system is selected from the group consisting of microwave plasma, RF plasma, and DC plasma.
The method of claim 14, wherein the plasma system uses a pressure in the near atmospheric range.
The method of claim 14 further comprising using the carrier gas comprising one or m ore of argon and nitrogen to create a plasma.
The method of claim 14, wherein the tungsten reactant is selected f r om the group consisting of tungsten oxides[[,] and tungsten salts[[,]] an dthe4-ike,
The method of claim 14, wherein the plurality of tungsten disulfide (WS₂) nanostructures comprises inorganic fullerene like IP-WS₂ spherical nanoparticles or nanotubes.
WS₂ nanostructures formed u sing t h e method according to claim 14.
A nanostructured composite material comprising: a major amount of one or more materials selected from the group consisting of metals, cera m ics, and poly m ers; and a minor am o unt of W S₂ nanostructures formed using the method according to claim 14.
Materials described outside the worked examples.
tungsten reactant (precursor)
carbon disulfide
CS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 44–80 nm | — |
Thickness | 20–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic illustration of an exemplary experimental set up to synthesize WS₂ nanostructures in accordance with the present teachings. [0012]
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
FIG. 8 shows exemplary nanoindentation curves 17 Attorney Docket: 0023.0087 Client Ref: UNM-851 for the two composites samples of Example 6. Oliver-Phar …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a nanostructured material comprising: providing a plurality of precursor materials, wherein each of the plurality of precursor materials comprises a tu n gsten reactant; and flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 t C to about 1000 0 C, wherein the reaction time is sufficient to permit the tungsten reactant to react with carbon disulfide to form a plurality of tungsten disulfide (WS₂) nanostructures.
(Curr en tly Amended) The method of claim 1, w herein the step of providing a plurality of precursor materials comprises providing a plurality of precursor materials as liquid dispersions,.Qi ids, or aerosols.
The method of claim 1, wherein the step of flowing, for a reaction time, a substantially continuous stream of carbon disulfide (C S₂) vapor in a carrier gas over the plurality of precursor materials at a temperature in the range of about 7 00 r C to about 1000 *C comprises flowing, for a reaction time, a substantially con t inuous stream of carbon disulfide (CS 2) vapor in a c a rri e r gas mixed with the plurality of precursor materials at a temperature in the range of about 700 0 C to about 1000 "C.
The method of claim 1, wherein the plurality of W S₂ nanostructures comprise one or more nanostructural for m s selected f r om the group consisting of fla k es, particles, fibers, tubes, rods, spheres (inorganic fullerene), and octahedral crystals.
The method of claim 1, w herein the plurality of WS₂ nanostructures comprise inorganic fulleren es li k e I FWS₂ spherical nanoparticles.
The method of claim 1, wherein the step of providing a plurality of precursor materials comprises pro v iding precursor materials having at least one dimension in the range of about nr m to about 20 pm.
The method of claim 1, wherein the tungsten reactant is selected f rom the group consisting of tungsten oxides[[,]J an tungsten salts [[,] an d-44iike.
(O riginal) ' The method of claim 1, wherein the carrier gas comprises one or more of argon and nitrogen.
The method of claim 1, wherein the reaction ti m e is at least about 20 minutes.
WS₂ nanostructures f or m ed using the method according to claim 1.
(Original) The m ethod of claim 1 further co m prisi n g adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to f o rm a nanostructured composite material.
A nanostructured composite mater i al co m prising: a major amount of one or more materials selected from the group consisting of metals, ceramics, and polymers; and a minor amount of WS₂ nanostructures formed using the method according to claim 1.
Th e method of claim 1 4 further comprising adding the plurality of tungsten disulfide (W S₂) nanostructures to one or more of metals, ceramics, and polymers to form a nanostructured composite material.
A method for synthesizing a nanostructured material comp r ising: providing a plurality of precursor materials, wherein each of the pl u rality of precursor materials comprises a tungsten reactant; and flowing, in a plasma system, a substantially continuous stream of carbon disulfide (CS₂) vapor in a carrier gas over the plurality of precursor materials for a reaction time, wherein the reaction time is sufficient to permit the tungsten reactant to react wit h carbon disu l fide to fonn a plurality of tungsten disulfide (W S₂) nanostructures.
The method of claim 14, wherein the plasma system is selected from the group consisting of microwave plasma, RF plasma, and DC plasma.
The method of claim 14, wherein the plasma system uses a pressure in the near atmospheric range.
The method of claim 14 further comprising using the carrier gas comprising one or m ore of argon and nitrogen to create a plasma.
The method of claim 14, wherein the tungsten reactant is selected f r om the group consisting of tungsten oxides[[,] and tungsten salts[[,]] an dthe4-ike,
The method of claim 14, wherein the plurality of tungsten disulfide (WS₂) nanostructures comprises inorganic fullerene like IP-WS₂ spherical nanoparticles or nanotubes.
WS₂ nanostructures formed u sing t h e method according to claim 14.
A nanostructured composite material comprising: a major amount of one or more materials selected from the group consisting of metals, cera m ics, and poly m ers; and a minor am o unt of W S₂ nanostructures formed using the method according to claim 14.
Materials described outside the worked examples.
tungsten reactant (precursor)
carbon disulfide
CS₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a schematic i l lustration of an SEM image of exemp l ary WS₂ flakes in accordance with the present teachings. [0013]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 44–80 nm | — |
Thickness | 20–500 nm |
Related documents with shared materials, methods, properties, or citations.
tungsten disulfide nanostructures
WS₂
tungsten oxides
tungsten salts
carrier gas (argon and/or nitrogen)
hydrogen
H₂
metals, ceramics, and/or polymers matrix
tungsten(VI) oxide
WO₃
tungsten(IV) oxide
WO₂
tungsten(IV) chloride
WCl₄
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
| — |
Temperature | 0–1000 °C | — |
Duration | 1–6 hours | — |
Duration | 3–36 hours | — |
Temperature | 700–1000 °C | — |
Duration | 3–12 hours | — |
Thickness | 10–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 5–27 nm | — |
Thickness | 100–271 nm | — |
Duration | ≥ 20 minutes | — |
tungsten disulfide nanostructures
WS₂
tungsten oxides
tungsten salts
carrier gas (argon and/or nitrogen)
hydrogen
H₂
metals, ceramics, and/or polymers matrix
tungsten(VI) oxide
WO₃
tungsten(IV) oxide
WO₂
tungsten(IV) chloride
WCl₄
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
| — |
Temperature | 0–1000 °C | — |
Duration | 1–6 hours | — |
Duration | 3–36 hours | — |
Temperature | 700–1000 °C | — |
Duration | 3–12 hours | — |
Thickness | 10–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 5–27 nm | — |
Thickness | 100–271 nm | — |
Duration | ≥ 20 minutes | — |
tungsten disulfide nanostructures
WS₂
tungsten oxides
tungsten salts
carrier gas (argon and/or nitrogen)
hydrogen
H₂
metals, ceramics, and/or polymers matrix
tungsten(VI) oxide
WO₃
tungsten(IV) oxide
WO₂
tungsten(IV) chloride
WCl₄
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
| — |
Temperature | 0–1000 °C | — |
Duration | 1–6 hours | — |
Duration | 3–36 hours | — |
Temperature | 700–1000 °C | — |
Duration | 3–12 hours | — |
Thickness | 10–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 5–27 nm | — |
Thickness | 100–271 nm | — |
Duration | ≥ 20 minutes | — |
tungsten disulfide nanostructures
WS₂
tungsten oxides
tungsten salts
carrier gas (argon and/or nitrogen)
hydrogen
H₂
metals, ceramics, and/or polymers matrix
tungsten(VI) oxide
WO₃
tungsten(IV) oxide
WO₂
tungsten(IV) chloride
WCl₄
FIG. 3 depicts a TEM image of exemplary WS₂ nanofibers in accordance with the present teachings. [0014]
FIG. 4 depicts a TEM image of an exemplary WS₂ nanoparticle in accordance with the present teachings. [0015]
FIG. 5 depicts an SEM image of exemplary WS₂ nanostructures obtained using a plasma system in accordance with the present teachings. [0016]
FIG. 6 depicts an SEM image of exemplary WS₂ nanotubes in accordance with the present teachings. [0017]
FIG. 7 depicts a higher magnification SEM image of exemplary WS₂ nanotubes shown in
| — |
Temperature | 0–1000 °C | — |
Duration | 1–6 hours | — |
Duration | 3–36 hours | — |
Temperature | 700–1000 °C | — |
Duration | 3–12 hours | — |
Thickness | 10–80 nm | — |
Thickness | 10–30 nm | — |
Thickness | 5–27 nm | — |
Thickness | 100–271 nm | — |
Duration | ≥ 20 minutes | — |