Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Exfoliated WS₂ flake on Si substrate, Er implanted at 10¹⁴ ions/cm² and annealed at 400 C for 1 hour; fluorescing flake used for telecom PL and lifetime measurements.
Thinner exfoliated WS₂ flake on Si substrate, implanted with Er at 10¹⁴ ions/cm²; no telecom fluorescence observed because thickness is below the implantation penetration depth.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Exfoliated WS₂ flake on Si substrate, Er implanted at 10¹⁴ ions/cm² and annealed at 400 C for 1 hour; fluorescing flake used for telecom PL and lifetime measurements.
Thinner exfoliated WS₂ flake on Si substrate, implanted with Er at 10¹⁴ ions/cm²; no telecom fluorescence observed because thickness is below the implantation penetration depth.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Exfoliated WS₂ flake on Si substrate, Er implanted at 10¹⁴ ions/cm² and annealed at 400 C for 1 hour; fluorescing flake used for telecom PL and lifetime measurements.
Thinner exfoliated WS₂ flake on Si substrate, implanted with Er at 10¹⁴ ions/cm²; no telecom fluorescence observed because thickness is below the implantation penetration depth.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Exfoliated WS₂ flake on Si substrate, Er implanted at 10¹⁴ ions/cm² and annealed at 400 C for 1 hour; fluorescing flake used for telecom PL and lifetime measurements.
Thinner exfoliated WS₂ flake on Si substrate, implanted with Er at 10¹⁴ ions/cm²; no telecom fluorescence observed because thickness is below the implantation penetration depth.