Abstract

This letter investigates low frequency 1/f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density at different back gate densities. The noise at low back gate density is found to be independent of top gate carrier density. With increasing back gate density, noise value increases and a noise peak is observed near charge inhomogeneity of the device. Further increase in back gate density leads to decrease in noise magnitude. The shape of the noise is found to be closely related to the charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality shows clear evidence of noise emanating from combination of charge number and mobility fluctuation.

Abstract

This letter investigates low frequency 1/f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density at different back gate densities. The noise at low back gate density is found to be independent of top gate carrier density. With increasing back gate density, noise value increases and a noise peak is observed near charge inhomogeneity of the device. Further increase in back gate density leads to decrease in noise magnitude. The shape of the noise is found to be closely related to the charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality shows clear evidence of noise emanating from combination of charge number and mobility fluctuation.

Abstract

This letter investigates low frequency 1/f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density at different back gate densities. The noise at low back gate density is found to be independent of top gate carrier density. With increasing back gate density, noise value increases and a noise peak is observed near charge inhomogeneity of the device. Further increase in back gate density leads to decrease in noise magnitude. The shape of the noise is found to be closely related to the charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality shows clear evidence of noise emanating from combination of charge number and mobility fluctuation.

Abstract

This letter investigates low frequency 1/f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density at different back gate densities. The noise at low back gate density is found to be independent of top gate carrier density. With increasing back gate density, noise value increases and a noise peak is observed near charge inhomogeneity of the device. Further increase in back gate density leads to decrease in noise magnitude. The shape of the noise is found to be closely related to the charge inhomogeneity region of the device. Moreover, the noise and conductivity data near charge neutrality shows clear evidence of noise emanating from combination of charge number and mobility fluctuation.