Observation of the Optical Phonons in α-MnTe films

Himanshu Sheokand; Arun K Kumay; Mazharul Islam Mondal; Milo Sprague; Ravinder Sharma; Jayan Thomas; Dariusz Kaczorowski; Andrzej Ptok; Madhab Neupane

doi:10.48550/arXiv.2605.26075

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputed Phonon

Observation of the Optical Phonons in α-MnTe films

Himanshu Sheokand, Arun K Kumay, Mazharul Islam Mondal, Milo Sprague et al.

arXiv preprint·2026·arXiv:2605.26075

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

1 preparation4 characterizations10 properties3 figures

ExperimentalMnTeStudied Material

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

1 characterization2 properties

Simulated Supercell DftMnTeStudied Material

Materials

alpha-MnTe

MnTe

Studied Material

Also known as

α-MnTeMnTe

Variables

phase= hexagonal NiAs-type

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Observation of the Optical Phonons in α-MnTe films | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Film Thickness	film thickness	40nm	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0002)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0004)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(111)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(222)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Mn	4.71at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Te	4.58at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	Eg	121cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	A1g	140cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	GaAs substrate mode	268cm⁻¹	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Calculated Phonon Mode	bulk Raman-active mode	Eg	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—
Phase Symmetry	monolayer symmetry	P-3m1	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—

Properties

Type	Label	Value	Material	Sample	Source
Film Thickness	film thickness	40nm	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0002)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0004)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(111)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(222)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Mn	4.71at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Te	4.58at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	Eg	121cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	A1g	140cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	GaAs substrate mode	268cm⁻¹	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Calculated Phonon Mode	bulk Raman-active mode	Eg	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—
Phase Symmetry	monolayer symmetry	P-3m1	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—

Properties

Type	Label	Value	Material	Sample	Source
Film Thickness	film thickness	40nm	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0002)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0004)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(111)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(222)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Mn	4.71at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Te	4.58at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	Eg	121cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	A1g	140cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	GaAs substrate mode	268cm⁻¹	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Calculated Phonon Mode	bulk Raman-active mode	Eg	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—
Phase Symmetry	monolayer symmetry	P-3m1	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—

Properties

Type	Label	Value	Material	Sample	Source
Film Thickness	film thickness	40nm	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0002)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	MnTe film reflection	(0004)	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(111)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Xrd Peak Pattern	GaAs substrate reflection	(222)	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Mn	4.71at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Elemental Composition	Te	4.58at.%	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	Eg	121cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	A1g	140cm⁻¹	MnTe	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Raman Peak	GaAs substrate mode	268cm⁻¹	GaAs	Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substr	—
Calculated Phonon Mode	bulk Raman-active mode	Eg	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—
Phase Symmetry	monolayer symmetry	P-3m1	MnTe	First-principles phonon-calculation model of hexagonal α-MnT	—

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

Observation of the Optical Phonons in α-MnTe films

Samples

Epitaxial α-MnTe thin film grown by MBE on GaAs(111)B substrate; thickness about 40 nm, with SEM field of view around 10 µm.

First-principles phonon-calculation model of hexagonal α-MnTe used to identify Raman-active optical phonons and compare symmetry lowering in the monolayer limit.

Materials

Why these are connected

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