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A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen content | Matter42 Literature

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

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Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

A systematic study of spin-dependent recombination in GaAs₁-xNx as a function of nitrogen content

A.C. Ulibarri, R. Kothari, A. Garcia, J.C. Harmand et al.

2022·10.1002/pssb.202200361·arXiv:2208.08785

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

GaAs₁-xNx epilayer region with highest nitrogen content among the studied points; nominal wafer composition GaAs0.979N0.021, spatially varying across the surface.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.031.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.034.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with x = 0.035.

1 preparation2 characterizations1 property3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

GaAs₁-xNx epilayer region with lowest nitrogen content among the studied points; x = 0.022.

1 preparation2 characterizations4 properties3 figures

ExperimentalGaAs₁-xNxStudied MaterialGaAsSubstrate / DielectricGaAsSubstrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.