Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Jagannath Jena; Eugene D. Ark; Siddhesh Ambhire; Michael D. Smith; Justin S. Wood; Junyi Yang; John Pearson; Hanu Arava; Daniel Rosenmann; Ulrich Welp; Jidong S. Jiang; Deshun Hong; Ivar Martin; Steven S.-L. Zhang; Anand Bhattacharya

doi:10.1063/5.0304277

Paper details

Research paper

Experimental GrowthExperimental Characterization

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Jagannath Jena, Eugene D. Ark, Siddhesh Ambhire, Michael D. Smith et al.

2025·10.1063/5.0304277·arXiv:2507.03301

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

2 preparations4 characterizations3 properties2 figures

ExperimentalBiStudied MaterialGaAsSubstrate / Dielectric

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

2 preparations4 characterizations3 properties2 figures

ExperimentalBiStudied MaterialGaAsSubstrate / Dielectric

Materials

Studied Material

Also known as

bismuthBi(111)

Variables

phase= epitaxial thin film

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(111)	22.44deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(111)	22.354deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Peak Two Theta	(222)	45.752deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(222)	45.645deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Rocking Fwhm	(111)	0.157deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Rocking Fwhm	(111)	0.098deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(111)	22.44deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(111)	22.354deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Peak Two Theta	(222)	45.752deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(222)	45.645deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Rocking Fwhm	(111)	0.157deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Rocking Fwhm	(111)	0.098deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(111)	22.44deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(111)	22.354deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Peak Two Theta	(222)	45.752deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(222)	45.645deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Rocking Fwhm	(111)	0.157deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Rocking Fwhm	(111)	0.098deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(111)	22.44deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(111)	22.354deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Peak Two Theta	(222)	45.752deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Peak Two Theta	(222)	45.645deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—
Xrd Rocking Fwhm	(111)	0.157deg	Bi	Bi(111) film on GaAs(111) substrate prepared with lower-curr	—
Xrd Rocking Fwhm	(111)	0.098deg	Bi	Bi(111) film on GaAs(111) substrate prepared with higher-cur	—

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

Samples

Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.

Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.

Materials

Why these are connected

Growth

Processing

Characterization

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Growth

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Characterization

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Growth

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Characterization

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Growth

Processing

Characterization

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