Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Three-electron GaAs asymmetric hybrid double-quantum-dot qubit modeled as an integral unit using a full configuration-interaction approach; used for spectra as a function of detuning and dielectric constant.
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the weak-interaction limit used for comparison (κ = 1000).
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the strongly interacting regime (κ = 12.5).
2 properties
SimulatedGaAsStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Three-electron GaAs asymmetric hybrid double-quantum-dot qubit modeled as an integral unit using a full configuration-interaction approach; used for spectra as a function of detuning and dielectric constant.
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the weak-interaction limit used for comparison (κ = 1000).
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the strongly interacting regime (κ = 12.5).
2 properties
SimulatedGaAsStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Three-electron GaAs asymmetric hybrid double-quantum-dot qubit modeled as an integral unit using a full configuration-interaction approach; used for spectra as a function of detuning and dielectric constant.
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the weak-interaction limit used for comparison (κ = 1000).
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the strongly interacting regime (κ = 12.5).
2 properties
SimulatedGaAsStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Three-electron GaAs asymmetric hybrid double-quantum-dot qubit modeled as an integral unit using a full configuration-interaction approach; used for spectra as a function of detuning and dielectric constant.
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the weak-interaction limit used for comparison (κ = 1000).
No measurements recorded
SimulatedGaAsStudied Material
Same GaAs double-quantum-dot system in the strongly interacting regime (κ = 12.5).
2 properties
SimulatedGaAsStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
