Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte; Atefeh Shadmani; Zhe Liu; Andraz Debevc; Tom Vandekerckhove; Marcus Albrechtsen; Rüdiger Schott; Arne Ludwig; Janez Krč; Gunther Roelkens; Leonardo Midolo; Bart Kuyken; Dries Van Thourhout

doi:10.1038/s41467-017-00987-6

Paper

Atlas literature

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

2 preparations1 characterization2 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialphotoresistSubstrate / Dielectric

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

4 properties

ExperimentalSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / Dielectric

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

3 preparations2 characterizations9 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / DielectricCr/AuCapping Or ContactNi/Ge/AuCapping Or ContactTi/AuCapping Or Contact

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits | Matter42 Literature

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

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