Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte; Atefeh Shadmani; Zhe Liu; Andraz Debevc; Tom Vandekerckhove; Marcus Albrechtsen; Rüdiger Schott; Arne Ludwig; Janez Krč; Gunther Roelkens; Leonardo Midolo; Bart Kuyken; Dries Van Thourhout

doi:10.1038/s41467-017-00987-6

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Research paper

Experimental Characterization

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Jasper De Witte, Atefeh Shadmani, Zhe Liu, Andraz Debevc et al.

2025·10.1038/s41467-017-00987-6·arXiv:2511.21529

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

2 preparations1 characterization2 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialphotoresistSubstrate / Dielectric

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

4 properties

ExperimentalSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / Dielectric

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

3 preparations2 characterizations9 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / DielectricCr/AuCapping Or ContactNi/Ge/AuCapping Or ContactTi/AuCapping Or Contact

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

2 preparations1 characterization2 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialphotoresistSubstrate / Dielectric

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

4 properties

ExperimentalSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / Dielectric

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

3 preparations2 characterizations9 properties2 figures

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

2 preparations1 characterization2 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialphotoresistSubstrate / Dielectric

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

4 properties

ExperimentalSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / Dielectric

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

3 preparations2 characterizations9 properties2 figures

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

2 preparations1 characterization2 properties2 figures

ExperimentalGaAsStudied MaterialInGaAsStudied MaterialAl0.33Ga0.67AsStudied MaterialphotoresistSubstrate / Dielectric

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

4 properties

ExperimentalSiNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricDVS-BCBSubstrate / Dielectric

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

3 preparations2 characterizations9 properties2 figures

Type	Label	Value	Material	Sample	Condition	Source
Process Yield	micro-transfer printing yield	94.7%	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	successfully printed devices	36count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	attempted printed devices	38count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	GaAs nanobeam thickness	160nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	SiN waveguide thickness	300nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	DVS-BCB adhesive layer thickness	50nm	DVS-BCB	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	SiO₂ layer thickness	3.3um	SiO₂	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	SiN waveguide width	880nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	GaAs nanobeam width in emitter section	300nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising	—	—

Type	Label	Value	Material	Sample	Condition	Source
Process Yield	micro-transfer printing yield	94.7%	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	successfully printed devices	36count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	attempted printed devices	38count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	GaAs nanobeam thickness	160nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	SiN waveguide thickness	300nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	DVS-BCB adhesive layer thickness	50nm	DVS-BCB	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	SiO₂ layer thickness	3.3um	SiO₂	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	SiN waveguide width	880nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	GaAs nanobeam width in emitter section	300nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising	—	—

Type	Label	Value	Material	Sample	Condition	Source
Process Yield	micro-transfer printing yield	94.7%	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	successfully printed devices	36count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	attempted printed devices	38count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	GaAs nanobeam thickness	160nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	SiN waveguide thickness	300nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	DVS-BCB adhesive layer thickness	50nm	DVS-BCB	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	SiO₂ layer thickness	3.3um	SiO₂	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	SiN waveguide width	880nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	GaAs nanobeam width in emitter section	300nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising	—	—

Type	Label	Value	Material	Sample	Condition	Source
Process Yield	micro-transfer printing yield	94.7%	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	successfully printed devices	36count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Device Count	attempted printed devices	38count	GaAs SiN	Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	GaAs nanobeam thickness	160nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising		—
Layer Thickness	SiN waveguide thickness	300nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	DVS-BCB adhesive layer thickness	50nm	DVS-BCB	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Layer Thickness	SiO₂ layer thickness	3.3um	SiO₂	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	SiN waveguide width	880nm	SiN	Low-loss SiN target interposer with SiN waveguides coated by Integrated micro-transfer-printed emitter device comprising	—	—
Waveguide Width	GaAs nanobeam width in emitter section	300nm	GaAs	Preprocessed GaAs nanobeam source device on its native subst Integrated micro-transfer-printed emitter device comprising	—	—

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Preprocessed GaAs nanobeam source device on its native substrate, including embedded InGaAs quantum dots, p-i-n structure, ohmic contacts, and photoresist coupon encapsulation used for release and transfer.

Low-loss SiN target interposer with SiN waveguides coated by a DVS-BCB adhesive layer on SiO₂/Si.

Integrated micro-transfer-printed emitter device comprising a GaAs nanobeam coupon on a SiN interposer, with final metallization and electrical contacts.

Materials

Processing

Characterization

Properties

Why these are connected