Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Detection Efficiency | single-photon microwave detection efficiency | 70% | — | |||
| Frequency Range | tunable detection frequency range | 3-5.2GHz | — | |||
| Cavity Resonance Frequency | fc at B∥ = 0 | 5.2GHz | — | |||
| Inductance | total equivalent inductance | 36nH | — | |||
| Capacitance | total stray capacitance | 26fF | — | |||
| Impedance | cavity impedance | 1.2kOhm | — | |||
| Number Of Junctions | JJ array size | 24 | — |
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Detection Efficiency | single-photon microwave detection efficiency | 70% | — | |||
| Frequency Range | tunable detection frequency range | 3-5.2GHz | — | |||
| Cavity Resonance Frequency | fc at B∥ = 0 | 5.2GHz | — | |||
| Inductance | total equivalent inductance | 36nH | — | |||
| Capacitance | total stray capacitance | 26fF | — | |||
| Impedance | cavity impedance | 1.2kOhm | — | |||
| Number Of Junctions | JJ array size | 24 | — |
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Detection Efficiency | single-photon microwave detection efficiency | 70% | — | |||
| Frequency Range | tunable detection frequency range | 3-5.2GHz | — | |||
| Cavity Resonance Frequency | fc at B∥ = 0 | 5.2GHz | — | |||
| Inductance | total equivalent inductance | 36nH | — | |||
| Capacitance | total stray capacitance | 26fF | — | |||
| Impedance | cavity impedance | 1.2kOhm | — | |||
| Number Of Junctions | JJ array size | 24 | — |
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Detection Efficiency | single-photon microwave detection efficiency | 70% | — | |||
| Frequency Range | tunable detection frequency range | 3-5.2GHz | — | |||
| Cavity Resonance Frequency | fc at B∥ = 0 | 5.2GHz | — | |||
| Inductance | total equivalent inductance | 36nH | — | |||
| Capacitance | total stray capacitance | 26fF | — | |||
| Impedance | cavity impedance | 1.2kOhm | — | |||
| Number Of Junctions | JJ array size | 24 | — |
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime