Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide | Matter42 Literature

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Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide | Matter42 Literature

Materials

MoS₂

MoS₂

Studied Material

Also known as

monolayer MoS₂

studied material

MoS₂-xOx

MoS₂-xOx

Studied Material

Also known as

MoS₂-0.19O0.19MoS₂-0.44O0.44MoS₂-0.51O0.51

Variables

x_range= 0,0.51

studied material

gold

Au

Capping Or Contact

Also known as

gold electrodesAu electrodes

capping or contact

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂ layer

Variables

thickness_nm= 300

substrate or dielectric

silicon

Si

Substrate / Dielectric

Also known as

P++ siliconheavily doped Si substrate

Variables

doping= P++

substrate or dielectric

nitrogen dioxide

NO₂

Reactant Species

Also known as

NO₂ gas

reactant species

argon

Ar

Carrier Gas

Also known as

argon-protected

carrier gas

gallium ion

Ga+

Reactant Species

Also known as

focused Ga+ ion beam

reactant species

Growth

CVD

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

—

Carrier Gases

—

Conditions

Processing

1

Transfer

Step 1

Process Details

target:Au electrodes on SiO₂/Si

substrate thickness nm:300

electrode separation um:10

Samples:

Characterization

XPS

XPSExperimental

Conditions

purposeelemental composition and O incorporation

binding energy feature eV236

Figure References

Properties

Type	Label	Value	Material	Sample	Condition	Source
Atomic Ratio	O:Mo	0.19	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.44	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.44 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.51	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet On Off Ratio	on/off ratio	370000	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	10.74cm²/Vs	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	0.02cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Fet Mobility	electron mobility	5.39cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet Threshold Voltage	breakdown voltage	26.2V	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Threshold Voltage	breakdown voltage	12.6V	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Conductance Activation Energy	NNH activation energy	0eV	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Gas Response	NO₂ response	5800%	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Limit Of Detection	NO₂ LOD	0.00014ppb	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—

Materials

MoS₂

MoS₂

Studied Material

Also known as

monolayer MoS₂

studied material

MoS₂-xOx

MoS₂-xOx

Studied Material

Also known as

MoS₂-0.19O0.19MoS₂-0.44O0.44MoS₂-0.51O0.51

Variables

x_range= 0,0.51

studied material

gold

Au

Capping Or Contact

Also known as

gold electrodesAu electrodes

capping or contact

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂ layer

Variables

thickness_nm= 300

substrate or dielectric

silicon

Si

Substrate / Dielectric

Also known as

P++ siliconheavily doped Si substrate

Variables

doping= P++

substrate or dielectric

nitrogen dioxide

NO₂

Reactant Species

Also known as

NO₂ gas

reactant species

argon

Ar

Carrier Gas

Also known as

argon-protected

carrier gas

gallium ion

Ga+

Reactant Species

Also known as

focused Ga+ ion beam

reactant species

Growth

CVD

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

—

Carrier Gases

—

Conditions

Processing

1

Transfer

Step 1

Process Details

target:Au electrodes on SiO₂/Si

substrate thickness nm:300

electrode separation um:10

Samples:

Characterization

XPS

XPSExperimental

Conditions

purposeelemental composition and O incorporation

binding energy feature eV236

Figure References

Properties

Type	Label	Value	Material	Sample	Condition	Source
Atomic Ratio	O:Mo	0.19	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.44	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.44 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.51	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet On Off Ratio	on/off ratio	370000	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	10.74cm²/Vs	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	0.02cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Fet Mobility	electron mobility	5.39cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet Threshold Voltage	breakdown voltage	26.2V	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Threshold Voltage	breakdown voltage	12.6V	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Conductance Activation Energy	NNH activation energy	0eV	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Gas Response	NO₂ response	5800%	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Limit Of Detection	NO₂ LOD	0.00014ppb	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—

Materials

MoS₂

MoS₂

Studied Material

Also known as

monolayer MoS₂

studied material

MoS₂-xOx

MoS₂-xOx

Studied Material

Also known as

MoS₂-0.19O0.19MoS₂-0.44O0.44MoS₂-0.51O0.51

Variables

x_range= 0,0.51

studied material

gold

Au

Capping Or Contact

Also known as

gold electrodesAu electrodes

capping or contact

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂ layer

Variables

thickness_nm= 300

substrate or dielectric

silicon

Si

Substrate / Dielectric

Also known as

P++ siliconheavily doped Si substrate

Variables

doping= P++

substrate or dielectric

nitrogen dioxide

NO₂

Reactant Species

Also known as

NO₂ gas

reactant species

argon

Ar

Carrier Gas

Also known as

argon-protected

carrier gas

gallium ion

Ga+

Reactant Species

Also known as

focused Ga+ ion beam

reactant species

Growth

CVD

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

—

Carrier Gases

—

Conditions

Processing

1

Transfer

Step 1

Process Details

target:Au electrodes on SiO₂/Si

substrate thickness nm:300

electrode separation um:10

Samples:

Characterization

XPS

XPSExperimental

Conditions

purposeelemental composition and O incorporation

binding energy feature eV236

Figure References

Properties

Type	Label	Value	Material	Sample	Condition	Source
Atomic Ratio	O:Mo	0.19	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.44	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.44 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.51	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet On Off Ratio	on/off ratio	370000	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	10.74cm²/Vs	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	0.02cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Fet Mobility	electron mobility	5.39cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet Threshold Voltage	breakdown voltage	26.2V	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Threshold Voltage	breakdown voltage	12.6V	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Conductance Activation Energy	NNH activation energy	0eV	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Gas Response	NO₂ response	5800%	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Limit Of Detection	NO₂ LOD	0.00014ppb	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—

Materials

MoS₂

MoS₂

Studied Material

Also known as

monolayer MoS₂

studied material

MoS₂-xOx

MoS₂-xOx

Studied Material

Also known as

MoS₂-0.19O0.19MoS₂-0.44O0.44MoS₂-0.51O0.51

Variables

x_range= 0,0.51

studied material

gold

Au

Capping Or Contact

Also known as

gold electrodesAu electrodes

capping or contact

silicon dioxide

SiO₂

Substrate / Dielectric

Also known as

SiO₂ layer

Variables

thickness_nm= 300

substrate or dielectric

silicon

Si

Substrate / Dielectric

Also known as

P++ siliconheavily doped Si substrate

Variables

doping= P++

substrate or dielectric

nitrogen dioxide

NO₂

Reactant Species

Also known as

NO₂ gas

reactant species

argon

Ar

Carrier Gas

Also known as

argon-protected

carrier gas

gallium ion

Ga+

Reactant Species

Also known as

focused Ga+ ion beam

reactant species

Growth

CVD

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

—

Carrier Gases

—

Conditions

Processing

1

Transfer

Step 1

Process Details

target:Au electrodes on SiO₂/Si

substrate thickness nm:300

electrode separation um:10

Samples:

Characterization

XPS

XPSExperimental

Conditions

purposeelemental composition and O incorporation

binding energy feature eV236

Figure References

Properties

Type	Label	Value	Material	Sample	Condition	Source
Atomic Ratio	O:Mo	0.19	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.44	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.44 prepared by FIB irradi		—
Atomic Ratio	O:Mo	0.51	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet On Off Ratio	on/off ratio	370000	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	10.74cm²/Vs	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Mobility	electron mobility	0.02cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.19 prepared by FIB irradi		—
Fet Mobility	electron mobility	5.39cm²/Vs	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Fet Threshold Voltage	breakdown voltage	26.2V	MoS₂	Pristine monolayer MoS₂ transferred onto Au source/drain ele		—
Fet Threshold Voltage	breakdown voltage	12.6V	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Conductance Activation Energy	NNH activation energy	0eV	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Gas Response	NO₂ response	5800%	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—
Limit Of Detection	NO₂ LOD	0.00014ppb	MoS₂-xOx	O-doped MoS₂-xOx device with x = 0.51 prepared by FIB irradi		—