Research paperExperimental GrowthExperimental Characterization1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated ElectrodesGeorgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348AbstractSingle-layer graphene devices with interdigitated electrodes were fabricated and studied for low-frequency noise and random telegraph noise. The work reports 1/f noise behavior across all examined devices and relates noise amplitude to device geometry and active graphene area.Read more
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
Research paperExperimental GrowthExperimental Characterization1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated ElectrodesGeorgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348AbstractSingle-layer graphene devices with interdigitated electrodes were fabricated and studied for low-frequency noise and random telegraph noise. The work reports 1/f noise behavior across all examined devices and relates noise amplitude to device geometry and active graphene area.Read more
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
Research paperExperimental GrowthExperimental Characterization1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated ElectrodesGeorgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348AbstractSingle-layer graphene devices with interdigitated electrodes were fabricated and studied for low-frequency noise and random telegraph noise. The work reports 1/f noise behavior across all examined devices and relates noise amplitude to device geometry and active graphene area.Read more
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
Research paperExperimental GrowthExperimental Characterization1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated ElectrodesGeorgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou et al.conference paper·2011·10.1016/j.snb.2023.133551·arXiv:2502.01348AbstractSingle-layer graphene devices with interdigitated electrodes were fabricated and studied for low-frequency noise and random telegraph noise. The work reports 1/f noise behavior across all examined devices and relates noise amplitude to device geometry and active graphene area.Read more
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 50 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 100 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 8 um, ribbon width 200 um.7 preparations2 characterizations2 properties6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 15 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 50 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 100 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand
SLG micro-ribbon device with interdigitated Al electrodes; gap 25 um, ribbon width 200 um.7 preparations2 characterizations1 property6 figuresExperimentalCStudied MaterialExpand