Research paperExperimental GrowthExperimental CharacterizationEnhanced chemical vapour deposition of monolayer MoS₂ films via a clean promoterLulin Wang, Yue Sun, Kaushik Kannan, Lee Gannon et al.2025·10.1088/1361-648X/ae14c8·arXiv:2502.04505AbstractTwo-dimensional transition metal dichalcogenides such as MoS₂ are promising for electronic applications, but scalable synthesis with low contamination remains challenging. This work reports a contamination-free growth promoter for chemical vapour deposition of monolayer MoS₂ on amorphous SiO₂/Si. By using a polymer photoresist promoter on part of the substrate and tuning sulphur temperature and reactant concentration, the authors obtain larger flakes, higher monolayer ratio, greater coverage, and evidence for cleaner growth. XPS and Raman support the cleanliness of the films, and photoluminescence shows an A-exciton peak at 1.84 eV comparable to mechanically exfoliated MoS2.Read more
MoS₂ film grown on promoter-modified region of amorphous SiO₂/Si substrate.2 preparations4 characterizations6 properties4 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ film grown on pristine region of amorphous SiO₂/Si substrate.2 preparations3 characterizations4 properties4 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationEnhanced chemical vapour deposition of monolayer MoS₂ films via a clean promoterLulin Wang, Yue Sun, Kaushik Kannan, Lee Gannon et al.2025·10.1088/1361-648X/ae14c8·arXiv:2502.04505AbstractTwo-dimensional transition metal dichalcogenides such as MoS₂ are promising for electronic applications, but scalable synthesis with low contamination remains challenging. This work reports a contamination-free growth promoter for chemical vapour deposition of monolayer MoS₂ on amorphous SiO₂/Si. By using a polymer photoresist promoter on part of the substrate and tuning sulphur temperature and reactant concentration, the authors obtain larger flakes, higher monolayer ratio, greater coverage, and evidence for cleaner growth. XPS and Raman support the cleanliness of the films, and photoluminescence shows an A-exciton peak at 1.84 eV comparable to mechanically exfoliated MoS2.Read more
MoS₂ film grown on promoter-modified region of amorphous SiO₂/Si substrate.2 preparations4 characterizations6 properties4 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ film grown on pristine region of amorphous SiO₂/Si substrate.2 preparations3 characterizations4 properties4 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationEnhanced chemical vapour deposition of monolayer MoS₂ films via a clean promoterLulin Wang, Yue Sun, Kaushik Kannan, Lee Gannon et al.2025·10.1088/1361-648X/ae14c8·arXiv:2502.04505AbstractTwo-dimensional transition metal dichalcogenides such as MoS₂ are promising for electronic applications, but scalable synthesis with low contamination remains challenging. This work reports a contamination-free growth promoter for chemical vapour deposition of monolayer MoS₂ on amorphous SiO₂/Si. By using a polymer photoresist promoter on part of the substrate and tuning sulphur temperature and reactant concentration, the authors obtain larger flakes, higher monolayer ratio, greater coverage, and evidence for cleaner growth. XPS and Raman support the cleanliness of the films, and photoluminescence shows an A-exciton peak at 1.84 eV comparable to mechanically exfoliated MoS2.Read more
MoS₂ film grown on promoter-modified region of amorphous SiO₂/Si substrate.2 preparations4 characterizations6 properties4 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ film grown on pristine region of amorphous SiO₂/Si substrate.2 preparations3 characterizations4 properties4 figuresExperimentalMoS₂Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationEnhanced chemical vapour deposition of monolayer MoS₂ films via a clean promoterLulin Wang, Yue Sun, Kaushik Kannan, Lee Gannon et al.2025·10.1088/1361-648X/ae14c8·arXiv:2502.04505AbstractTwo-dimensional transition metal dichalcogenides such as MoS₂ are promising for electronic applications, but scalable synthesis with low contamination remains challenging. This work reports a contamination-free growth promoter for chemical vapour deposition of monolayer MoS₂ on amorphous SiO₂/Si. By using a polymer photoresist promoter on part of the substrate and tuning sulphur temperature and reactant concentration, the authors obtain larger flakes, higher monolayer ratio, greater coverage, and evidence for cleaner growth. XPS and Raman support the cleanliness of the films, and photoluminescence shows an A-exciton peak at 1.84 eV comparable to mechanically exfoliated MoS2.Read more
MoS₂ film grown on promoter-modified region of amorphous SiO₂/Si substrate.2 preparations4 characterizations6 properties4 figuresExperimentalMoS₂Studied MaterialExpand
MoS₂ film grown on pristine region of amorphous SiO₂/Si substrate.2 preparations3 characterizations4 properties4 figuresExperimentalMoS₂Studied MaterialExpand
