Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
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Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
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Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
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Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Tungsten doping-induced phase transition in CVD-grown MoS2 bilayers
Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations5 properties5 figures
1 preparation7 characterizations18 properties6 figures
Related documents with shared materials, methods, properties, or citations.
Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Average Flake Size | pristine region | 3.9um | — | |||
| Average Flake Size | promoter region main peak | 14.4um | — | |||
| Monolayer Fraction | monolayer ratio | 0.148 | — | |||
| Monolayer Fraction | monolayer ratio | 0.889 | — | |||
| Coverage | flake coverage | 4% | — | |||
| Coverage | flake coverage | 15% | — | |||
| Flake Population Density | population density | 2400mm⁻² | — | |||
| Flake Population Density | population density | 1000mm⁻² | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 0.5% | — | |||
| Flake Abundance Fraction | large flakes (>10 um) | 30.2% | — | |||
| Flake Size | largest merged triangular flake | 33um | — | |||
| Raman Peak | E2g | 384.3cm⁻¹ | — | |||
| Raman Peak | A1g | 405.1cm⁻¹ | — | |||
| Raman Mode Separation | A1g - E2g | 20.8cm⁻¹ | — | |||
| PL Peak | A-exciton | 1.845eV | — | |||
| PL Peak | B-exciton | 1.973eV | — | |||
| Substrate Thickness | MoS₂ film thickness | 0.68nm | — | |||
| Grain Size | single-crystalline hexagonal domains | — | — | |||
| Xps Binding Energy | Mo 3d | 229.6eV | — | |||
| Xps Binding Energy | Mo 3d | 232.8eV | — | |||
| Xps Binding Energy | S 2p | 162.4eV | — | |||
| Xps Binding Energy | S 2p | 163.6eV | — | |||
| Xps Binding Energy | — | 533.2eV | — | |||
| Xps Binding Energy | — | 285eV | — |
