Abstract

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron-hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms—both dependent on the Fermi level and band structure—complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS₂-Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (h-BN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light-matter interactions within low-dimensional systems.

Abstract

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron-hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms—both dependent on the Fermi level and band structure—complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS₂-Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (h-BN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light-matter interactions within low-dimensional systems.

Abstract

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron-hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms—both dependent on the Fermi level and band structure—complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS₂-Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (h-BN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light-matter interactions within low-dimensional systems.

Abstract

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron-hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms—both dependent on the Fermi level and band structure—complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS₂-Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (h-BN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light-matter interactions within low-dimensional systems.