Room temperature quantum emitters in van der Waals α-MoO3

Jeonghan Lee; Haiyuan Wang; Keun-Yeol Park; Soonsang Huh; Donghan Kim; Mihyang Yu; Changyoung Kim; Kristian Sommer Thygesen; Jieun Lee

doi:10.1021/acs.nanolett.4c05594

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed PL

Room temperature quantum emitters in van der Waals α-MoO₃

Jeonghan Lee, Haiyuan Wang, Keun-Yeol Park, Soonsang Huh et al.

2024·10.1021/acs.nanolett.4c05594·arXiv:2403.09099

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

1 preparation1 characterization5 properties1 figure

ExperimentalMoO₃Studied Material

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

2 preparations4 characterizations15 properties7 figures

ExperimentalMoO₃Studied Material

DFT model of bulk α-MoO₃ used for electronic-property calculations.

No measurements recorded

Simulated Supercell DftMoO₃Studied Material

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

1 characterization

Simulated Supercell DftMoO₃Studied Material

Materials

α-MoO₃

MoO₃

Studied Material

Also known as

alpha-MoO₃van der Waals α-MoO₃

studied material

vacuum

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Room temperature quantum emitters in van der Waals α-MoO3 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(020)	12.7deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(040)	25.6deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(060)	38.9deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Thickness	flake thickness range	3.5-30nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.16	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.087	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	excited-state lifetime	3.95ns	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	metastable-state lifetime	0.76us	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	2.18eV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	563nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	572nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	604nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	626nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	PSB separation	160meV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	saturation count rate Isat	0.41Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	actual saturation count rate	15Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Intensity Ratio	Debye-Waller factor (ZPL / total emission)	0.2	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	Huang-Rhys factor	1.9	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Band Gap	HSE06@PBE bulk band gap	3eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Band Gap	experimental bulk band gap	3.2eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(020)	12.7deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(040)	25.6deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(060)	38.9deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Thickness	flake thickness range	3.5-30nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.16	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.087	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	excited-state lifetime	3.95ns	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	metastable-state lifetime	0.76us	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	2.18eV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	563nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	572nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	604nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	626nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	PSB separation	160meV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	saturation count rate Isat	0.41Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	actual saturation count rate	15Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Intensity Ratio	Debye-Waller factor (ZPL / total emission)	0.2	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	Huang-Rhys factor	1.9	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Band Gap	HSE06@PBE bulk band gap	3eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Band Gap	experimental bulk band gap	3.2eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(020)	12.7deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(040)	25.6deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(060)	38.9deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Thickness	flake thickness range	3.5-30nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.16	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.087	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	excited-state lifetime	3.95ns	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	metastable-state lifetime	0.76us	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	2.18eV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	563nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	572nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	604nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	626nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	PSB separation	160meV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	saturation count rate Isat	0.41Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	actual saturation count rate	15Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Intensity Ratio	Debye-Waller factor (ZPL / total emission)	0.2	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	Huang-Rhys factor	1.9	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Band Gap	HSE06@PBE bulk band gap	3eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Band Gap	experimental bulk band gap	3.2eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Peak Two Theta	(020)	12.7deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(040)	25.6deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Xrd Peak Two Theta	(060)	38.9deg	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Thickness	flake thickness range	3.5-30nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.16	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
G2 Zero Delay	g2(0)	0.087	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	excited-state lifetime	3.95ns	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Lifetime	metastable-state lifetime	0.76us	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	2.18eV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	563nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	572nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	604nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
PL Peak	ZPL	626nm	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	PSB separation	160meV	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	saturation count rate Isat	0.41Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Intensity	actual saturation count rate	15Mcts/s	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Intensity Ratio	Debye-Waller factor (ZPL / total emission)	0.2	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Pl Peak Shift	Huang-Rhys factor	1.9	MoO₃	Mechanically exfoliated α-MoO₃ flake, later thermally anneal	—
Band Gap	HSE06@PBE bulk band gap	3eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—
Band Gap	experimental bulk band gap	3.2eV	MoO₃	As-grown bulk α-MoO₃ single crystal grown by the Bridgman me	—

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Room temperature quantum emitters in van der Waals α-MoO₃

Samples

As-grown bulk α-MoO₃ single crystal grown by the Bridgman method.

Mechanically exfoliated α-MoO₃ flake, later thermally annealed to activate optically active defect sites.

DFT model of bulk α-MoO₃ used for electronic-property calculations.

DFT model of α-MoO₃ containing an oxygen vacancy defect, used as a candidate emitter model.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth