Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Few-layer MoS₂ flake on SiO2, used for Raman/PL characterization and as the active channel in the phototransistor device structure with HfO₂ isolation, Si PN-junction substrate, and Au/Bi contacts.
2 characterizations6 properties1 figure
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor device with Si PN junction photogate (WJ).
2 characterizations5 properties2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor control device without PN junction (WOJ).
1 characterization2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Few-layer MoS₂ flake on SiO2, used for Raman/PL characterization and as the active channel in the phototransistor device structure with HfO₂ isolation, Si PN-junction substrate, and Au/Bi contacts.
2 characterizations6 properties1 figure
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor device with Si PN junction photogate (WJ).
2 characterizations5 properties2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor control device without PN junction (WOJ).
1 characterization2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Few-layer MoS₂ flake on SiO2, used for Raman/PL characterization and as the active channel in the phototransistor device structure with HfO₂ isolation, Si PN-junction substrate, and Au/Bi contacts.
2 characterizations6 properties1 figure
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor device with Si PN junction photogate (WJ).
2 characterizations5 properties2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor control device without PN junction (WOJ).
1 characterization2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Few-layer MoS₂ flake on SiO2, used for Raman/PL characterization and as the active channel in the phototransistor device structure with HfO₂ isolation, Si PN-junction substrate, and Au/Bi contacts.
2 characterizations6 properties1 figure
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor device with Si PN junction photogate (WJ).
2 characterizations5 properties2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
MoS₂ phototransistor control device without PN junction (WOJ).
1 characterization2 figures
ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact
Why these are connected
Related documents with shared materials, methods, properties, or citations.
