Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Device Length | junction separation L | ~20 nm to ~3 um | — | |||
| Gate Capacitance | Cbg | 38.37nF/cm2 | — | |||
| Fet Threshold Voltage | Dirac point voltage | VDP | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 20-30 mVV | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 10-15 mVV | — | |||
| Energy Gap | induced superconducting gap Δi in graphene | 10-15meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Device Length | junction separation L | ~20 nm to ~3 um | — | |||
| Gate Capacitance | Cbg | 38.37nF/cm2 | — | |||
| Fet Threshold Voltage | Dirac point voltage | VDP | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 20-30 mVV | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 10-15 mVV | — | |||
| Energy Gap | induced superconducting gap Δi in graphene | 10-15meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Device Length | junction separation L | ~20 nm to ~3 um | — | |||
| Gate Capacitance | Cbg | 38.37nF/cm2 | — | |||
| Fet Threshold Voltage | Dirac point voltage | VDP | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 20-30 mVV | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 10-15 mVV | — | |||
| Energy Gap | induced superconducting gap Δi in graphene | 10-15meV | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Device Length | junction separation L | ~20 nm to ~3 um | — | |||
| Gate Capacitance | Cbg | 38.37nF/cm2 | — | |||
| Fet Threshold Voltage | Dirac point voltage | VDP | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 20-30 mVV | — | |||
| Fet Threshold Voltage | cut-off voltage Vds | 10-15 mVV | — | |||
| Energy Gap | induced superconducting gap Δi in graphene | 10-15meV | — |