Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Repetition Rate | passive mode-locking repetition rate | below 500MHz | — | |||
| Comb Line Count | comb lines | 15count | — | |||
| Output Power | total power | 0.2mW | — | |||
| Linewidth | Lorentzian linewidth component | 8900Hz | — | |||
| Linewidth | Lorentzian linewidth component | 300mHz | — | |||
| Locking Range | repetition-rate locking range | 80MHz | — | |||
| Pump Current | DC diode pump current | 40mA | — | |||
| Pump Current | DC diode pump current | 190mA | — | |||
| Cavity Length | optical cavity roundtrip length | 0.6m | — |
Related documents with shared materials, methods, properties, or citations.
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
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II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Repetition Rate | passive mode-locking repetition rate | below 500MHz | — | |||
| Comb Line Count | comb lines | 15count | — | |||
| Output Power | total power | 0.2mW | — | |||
| Linewidth | Lorentzian linewidth component | 8900Hz | — | |||
| Linewidth | Lorentzian linewidth component | 300mHz | — | |||
| Locking Range | repetition-rate locking range | 80MHz | — | |||
| Pump Current | DC diode pump current | 40mA | — | |||
| Pump Current | DC diode pump current | 190mA | — | |||
| Cavity Length | optical cavity roundtrip length | 0.6m | — |
Related documents with shared materials, methods, properties, or citations.
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Hybrid-Integrated InGaAs/InP SPAD Arrays for Quantum Communications
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory
II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Repetition Rate | passive mode-locking repetition rate | below 500MHz | — | |||
| Comb Line Count | comb lines | 15count | — | |||
| Output Power | total power | 0.2mW | — | |||
| Linewidth | Lorentzian linewidth component | 8900Hz | — | |||
| Linewidth | Lorentzian linewidth component | 300mHz | — | |||
| Locking Range | repetition-rate locking range | 80MHz | — | |||
| Pump Current | DC diode pump current | 40mA | — | |||
| Pump Current | DC diode pump current | 190mA | — | |||
| Cavity Length | optical cavity roundtrip length | 0.6m | — |
Related documents with shared materials, methods, properties, or citations.
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Hybrid-Integrated InGaAs/InP SPAD Arrays for Quantum Communications
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory
II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Repetition Rate | passive mode-locking repetition rate | below 500MHz | — | |||
| Comb Line Count | comb lines | 15count | — | |||
| Output Power | total power | 0.2mW | — | |||
| Linewidth | Lorentzian linewidth component | 8900Hz | — | |||
| Linewidth | Lorentzian linewidth component | 300mHz | — | |||
| Locking Range | repetition-rate locking range | 80MHz | — | |||
| Pump Current | DC diode pump current | 40mA | — | |||
| Pump Current | DC diode pump current | 190mA | — | |||
| Cavity Length | optical cavity roundtrip length | 0.6m | — |
Related documents with shared materials, methods, properties, or citations.
Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Hybrid-Integrated InGaAs/InP SPAD Arrays for Quantum Communications
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory
II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD