Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Jinhua Hong; Alberto Guandalini; Weibin Wu; Haiming Sun; Fuwei Wu; Shulin Chen; Chao Ma; Kazu Suenaga; Thomas Pichler; Francesco Mauri

doi:10.1038/s41699-017-0003-9

Paper details

Research paper

Experimental CharacterizationTheoretical

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Jinhua Hong, Alberto Guandalini, Weibin Wu, Haiming Sun et al.

arXiv preprint·2025·10.1038/s41699-017-0003-9·arXiv:2510.08397

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

1 preparation2 characterizations3 properties2 figures

Experimentalh-BNStudied Material

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

1 characterization2 figures

Experimentalh-BNStudied Material

Materials

hexagonal boron nitride

h-BN

Studied Material

Also known as

h-BNhexagonal BN

studied material

Processing

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	6.6eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	A-A′ splitting gap	0.25eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	B exciton	8eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
Pl Peak Fwhm	PL peak	250meV	h-BN	—	—	—
Exciton Peak	A exciton	6.6eV	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	6.6eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	A-A′ splitting gap	0.25eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	B exciton	8eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
Pl Peak Fwhm	PL peak	250meV	h-BN	—	—	—
Exciton Peak	A exciton	6.6eV	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	6.6eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	A-A′ splitting gap	0.25eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	B exciton	8eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
Pl Peak Fwhm	PL peak	250meV	h-BN	—	—	—
Exciton Peak	A exciton	6.6eV	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	6.6eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	A-A′ splitting gap	0.25eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
PL Peak	B exciton	8eV	h-BN	Freestanding monolayer h-BN used for q-EELS and ADF-STEM mea		—
Pl Peak Fwhm	PL peak	250meV	h-BN	—	—	—
Exciton Peak	A exciton	6.6eV	h-BN	—	—	—

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Exciton dispersion fine structure and deep ultraviolet optical conductivity of freestanding two-dimensional h-BN

Samples

Freestanding monolayer h-BN used for q-EELS and ADF-STEM measurements.

Freestanding few-layer h-BN used for thickness-dependent q-EELS comparisons.

Materials

Processing

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations