Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property2 figures
2 characterizations1 property2 figures
1 preparation4 characterizations9 properties5 figures
1 preparation3 characterizations5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Roughness | Si-TSG roughness | 4angstrom | — | |||
| Surface Roughness | mica-TSG roughness | 2.6angstrom | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.45eV | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.5eV | — | |||
| Valence Band Position | valence band edge at K | -1.19eV | — | |||
| Valence Band Position | VBM at K | -1.08eV | — | |||
| Core Level Shift | W 4f / Se 3d pair separation between interfacial and subsequent layers | 0.21eV | — | |||
| Xps Binding Energy Shift | W 4f | 0.21eV | — | |||
| Xps Binding Energy Shift | Se 3d | 0.21eV | — | |||
| Xps Peak Assignment | — | Si 2p | — | |||
| Xps Chemical Environment | — | single chemical environment for the monolayer W and Se atoms on gold | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property2 figures
2 characterizations1 property2 figures
1 preparation4 characterizations9 properties5 figures
1 preparation3 characterizations5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Roughness | Si-TSG roughness | 4angstrom | — | |||
| Surface Roughness | mica-TSG roughness | 2.6angstrom | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.45eV | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.5eV | — | |||
| Valence Band Position | valence band edge at K | -1.19eV | — | |||
| Valence Band Position | VBM at K | -1.08eV | — | |||
| Core Level Shift | W 4f / Se 3d pair separation between interfacial and subsequent layers | 0.21eV | — | |||
| Xps Binding Energy Shift | W 4f | 0.21eV | — | |||
| Xps Binding Energy Shift | Se 3d | 0.21eV | — | |||
| Xps Peak Assignment | — | Si 2p | — | |||
| Xps Chemical Environment | — | single chemical environment for the monolayer W and Se atoms on gold | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property2 figures
2 characterizations1 property2 figures
1 preparation4 characterizations9 properties5 figures
1 preparation3 characterizations5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Roughness | Si-TSG roughness | 4angstrom | — | |||
| Surface Roughness | mica-TSG roughness | 2.6angstrom | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.45eV | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.5eV | — | |||
| Valence Band Position | valence band edge at K | -1.19eV | — | |||
| Valence Band Position | VBM at K | -1.08eV | — | |||
| Core Level Shift | W 4f / Se 3d pair separation between interfacial and subsequent layers | 0.21eV | — | |||
| Xps Binding Energy Shift | W 4f | 0.21eV | — | |||
| Xps Binding Energy Shift | Se 3d | 0.21eV | — | |||
| Xps Peak Assignment | — | Si 2p | — | |||
| Xps Chemical Environment | — | single chemical environment for the monolayer W and Se atoms on gold | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property2 figures
2 characterizations1 property2 figures
1 preparation4 characterizations9 properties5 figures
1 preparation3 characterizations5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Surface Roughness | Si-TSG roughness | 4angstrom | — | |||
| Surface Roughness | mica-TSG roughness | 2.6angstrom | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.45eV | — | |||
| Valence Band Splitting | upper valence band splitting at K | 0.5eV | — | |||
| Valence Band Position | valence band edge at K | -1.19eV | — | |||
| Valence Band Position | VBM at K | -1.08eV | — | |||
| Core Level Shift | W 4f / Se 3d pair separation between interfacial and subsequent layers | 0.21eV | — | |||
| Xps Binding Energy Shift | W 4f | 0.21eV | — | |||
| Xps Binding Energy Shift | Se 3d | 0.21eV | — | |||
| Xps Peak Assignment | — | Si 2p | — | |||
| Xps Chemical Environment | — | single chemical environment for the monolayer W and Se atoms on gold | — |