Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe2/NiPS3 Heterostructures

Xiangzhi Li; Andrew C. Jones; Junho Choi; Huan Zhao; Vigneshwaran Chandrasekaran; Michael T. Pettes; Andrei Piryatinski; Nikolai Sinitsyn; Scott A. Crooker; Han Htoon

doi:10.1016/j.mattod.2018.05.003

Paper details

Research paper

Experimental Characterization

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Xiangzhi Li, Andrew C. Jones, Junho Choi, Huan Zhao et al.

2022·10.1016/j.mattod.2018.05.003·arXiv:2203.00797

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

2 preparations3 characterizations17 properties2 figures

ExperimentalWSe₂Studied MaterialNiPS₃Studied Material

Materials

WSe₂

Studied Material

Also known as

monolayer WSe₂

Variables

dimensionality= monolayer

studied material

NiPS₃

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe2/NiPS3 Heterostructures | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Layer Thickness	NiPS₃ flake thickness	50nm	NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Diameter	indentation diameter	250nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Depth	indentation depth	175nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Ridge Height	circular ridge height	100nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
PL Peak	localized QE emission peak	1.629eV	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.3	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.71	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.48	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.51	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.42	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.56	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.39	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.24	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.53	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Lifetime	single-exponential decay lifetime	4.35ns	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Photoluminescence Single Photon Purity	single photon purity	0.8	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Multiphoton Probability	g(2)(0)/g(2)(T)	0.2	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—

Properties

Type	Label	Value	Material	Sample	Source
Layer Thickness	NiPS₃ flake thickness	50nm	NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Diameter	indentation diameter	250nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Depth	indentation depth	175nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Ridge Height	circular ridge height	100nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
PL Peak	localized QE emission peak	1.629eV	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.3	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.71	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.48	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.51	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.42	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.56	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.39	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.24	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.53	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Lifetime	single-exponential decay lifetime	4.35ns	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Photoluminescence Single Photon Purity	single photon purity	0.8	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Multiphoton Probability	g(2)(0)/g(2)(T)	0.2	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—

Properties

Type	Label	Value	Material	Sample	Source
Layer Thickness	NiPS₃ flake thickness	50nm	NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Diameter	indentation diameter	250nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Depth	indentation depth	175nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Ridge Height	circular ridge height	100nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
PL Peak	localized QE emission peak	1.629eV	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.3	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.71	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.48	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.51	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.42	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.56	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.39	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.24	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.53	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Lifetime	single-exponential decay lifetime	4.35ns	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Photoluminescence Single Photon Purity	single photon purity	0.8	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Multiphoton Probability	g(2)(0)/g(2)(T)	0.2	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—

Properties

Type	Label	Value	Material	Sample	Source
Layer Thickness	NiPS₃ flake thickness	50nm	NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Diameter	indentation diameter	250nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Indentation Depth	indentation depth	175nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Ridge Height	circular ridge height	100nm	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
PL Peak	localized QE emission peak	1.629eV	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.3	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.71	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.48	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.51	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	0.42	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.56	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.39	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.24	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Circular Polarization Degree	DCP	-0.53	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Lifetime	single-exponential decay lifetime	4.35ns	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Photoluminescence Single Photon Purity	single photon purity	0.8	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—
Pl Multiphoton Probability	g(2)(0)/g(2)(T)	0.2	WSe₂ NiPS₃	Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coa	—

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe₂/NiPS₃ Heterostructures

Samples

Dry-transferred WSe₂/NiPS₃ heterostructure on a Si wafer coated with a 300 nm polymer layer; includes locally indented regions used to create quantum emitters.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties