Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio | 10000 | — | |||
| Fet Sheet Resistance | reverse leakage current density | 0.01A/cm2 | — | |||
| Fet Mobility | current density at turn-on | 100A/cm2 | — | |||
| Fet On Off Ratio | peak EQE | 0.46% | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0.988 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0 | — | |||
| Fet On Off Ratio | straining relaxation | 20% | — | |||
| Fet On Off Ratio | light extraction improvement | 40% | — | |||
| Fet On Off Ratio | current density threshold | 30A/cm2 | — | |||
| Fet Threshold Voltage | turn-on voltage | 3.9V | — | |||
| Fet Sheet Resistance | reverse leakage at -10 V | 0.01A/cm2 | — | — | ||
| Fet On Off Ratio | peak external quantum efficiency | 0.46% | — | |||
| Fet On Off Ratio | light extraction efficiency | 0.42 | — | |||
| Fet On Off Ratio | predicted dislocation-free pixel yield | 0.988 | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | QW strain relaxation | 0.2 | — | |||
| Fet On Off Ratio | A coefficient | 22400000000s⁻¹ | — | |||
| Fet On Off Ratio | C coefficient | 9.47e-30cm⁶ s⁻¹ | — | |||
| Fet On Off Ratio | LEE | 0.42 | — |
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio | 10000 | — | |||
| Fet Sheet Resistance | reverse leakage current density | 0.01A/cm2 | — | |||
| Fet Mobility | current density at turn-on | 100A/cm2 | — | |||
| Fet On Off Ratio | peak EQE | 0.46% | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0.988 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0 | — | |||
| Fet On Off Ratio | straining relaxation | 20% | — | |||
| Fet On Off Ratio | light extraction improvement | 40% | — | |||
| Fet On Off Ratio | current density threshold | 30A/cm2 | — | |||
| Fet Threshold Voltage | turn-on voltage | 3.9V | — | |||
| Fet Sheet Resistance | reverse leakage at -10 V | 0.01A/cm2 | — | — | ||
| Fet On Off Ratio | peak external quantum efficiency | 0.46% | — | |||
| Fet On Off Ratio | light extraction efficiency | 0.42 | — | |||
| Fet On Off Ratio | predicted dislocation-free pixel yield | 0.988 | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | QW strain relaxation | 0.2 | — | |||
| Fet On Off Ratio | A coefficient | 22400000000s⁻¹ | — | |||
| Fet On Off Ratio | C coefficient | 9.47e-30cm⁶ s⁻¹ | — | |||
| Fet On Off Ratio | LEE | 0.42 | — |
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio | 10000 | — | |||
| Fet Sheet Resistance | reverse leakage current density | 0.01A/cm2 | — | |||
| Fet Mobility | current density at turn-on | 100A/cm2 | — | |||
| Fet On Off Ratio | peak EQE | 0.46% | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0.988 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0 | — | |||
| Fet On Off Ratio | straining relaxation | 20% | — | |||
| Fet On Off Ratio | light extraction improvement | 40% | — | |||
| Fet On Off Ratio | current density threshold | 30A/cm2 | — | |||
| Fet Threshold Voltage | turn-on voltage | 3.9V | — | |||
| Fet Sheet Resistance | reverse leakage at -10 V | 0.01A/cm2 | — | — | ||
| Fet On Off Ratio | peak external quantum efficiency | 0.46% | — | |||
| Fet On Off Ratio | light extraction efficiency | 0.42 | — | |||
| Fet On Off Ratio | predicted dislocation-free pixel yield | 0.988 | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | QW strain relaxation | 0.2 | — | |||
| Fet On Off Ratio | A coefficient | 22400000000s⁻¹ | — | |||
| Fet On Off Ratio | C coefficient | 9.47e-30cm⁶ s⁻¹ | — | |||
| Fet On Off Ratio | LEE | 0.42 | — |
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
10 preparations3 characterizations20 properties2 figures
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio | 10000 | — | |||
| Fet Sheet Resistance | reverse leakage current density | 0.01A/cm2 | — | |||
| Fet Mobility | current density at turn-on | 100A/cm2 | — | |||
| Fet On Off Ratio | peak EQE | 0.46% | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0.988 | — | |||
| Fet On Off Ratio | dislocation-free pixel fraction | 0 | — | |||
| Fet On Off Ratio | straining relaxation | 20% | — | |||
| Fet On Off Ratio | light extraction improvement | 40% | — | |||
| Fet On Off Ratio | current density threshold | 30A/cm2 | — | |||
| Fet Threshold Voltage | turn-on voltage | 3.9V | — | |||
| Fet Sheet Resistance | reverse leakage at -10 V | 0.01A/cm2 | — | — | ||
| Fet On Off Ratio | peak external quantum efficiency | 0.46% | — | |||
| Fet On Off Ratio | light extraction efficiency | 0.42 | — | |||
| Fet On Off Ratio | predicted dislocation-free pixel yield | 0.988 | — | |||
| Fet On Off Ratio | LEE | 0.42 | — | |||
| Fet On Off Ratio | QW strain relaxation | 0.2 | — | |||
| Fet On Off Ratio | A coefficient | 22400000000s⁻¹ | — | |||
| Fet On Off Ratio | C coefficient | 9.47e-30cm⁶ s⁻¹ | — | |||
| Fet On Off Ratio | LEE | 0.42 | — |
Related documents with shared materials, methods, properties, or citations.
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
GAN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Correlated Insulating States in Twisted Double Bilayer Graphene Enhanced by Interfacial Effect on CrOCl
Quasi-Φ0-periodic supercurrent at quantum Hall transitions
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
