Abstract

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. This work uses a two-dimensional drift-diffusion charge-control solver combined with localization landscape theory, random alloy fluctuations, V-defects, and dislocation-induced tail states to analyze carrier transport and forward-voltage reduction in red InGaN MQW LEDs. The model suggests that leakage carriers below turn-on can accumulate in the quantum wells, screen polarization-induced barriers, and reduce forward voltage, but at the cost of enhanced nonradiative recombination near dislocation lines.

Abstract

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. This work uses a two-dimensional drift-diffusion charge-control solver combined with localization landscape theory, random alloy fluctuations, V-defects, and dislocation-induced tail states to analyze carrier transport and forward-voltage reduction in red InGaN MQW LEDs. The model suggests that leakage carriers below turn-on can accumulate in the quantum wells, screen polarization-induced barriers, and reduce forward voltage, but at the cost of enhanced nonradiative recombination near dislocation lines.

Abstract

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. This work uses a two-dimensional drift-diffusion charge-control solver combined with localization landscape theory, random alloy fluctuations, V-defects, and dislocation-induced tail states to analyze carrier transport and forward-voltage reduction in red InGaN MQW LEDs. The model suggests that leakage carriers below turn-on can accumulate in the quantum wells, screen polarization-induced barriers, and reduce forward voltage, but at the cost of enhanced nonradiative recombination near dislocation lines.

Abstract

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the indium composition increases. This work uses a two-dimensional drift-diffusion charge-control solver combined with localization landscape theory, random alloy fluctuations, V-defects, and dislocation-induced tail states to analyze carrier transport and forward-voltage reduction in red InGaN MQW LEDs. The model suggests that leakage carriers below turn-on can accumulate in the quantum wells, screen polarization-induced barriers, and reduce forward voltage, but at the cost of enhanced nonradiative recombination near dislocation lines.