Research paperExperimental CharacterizationTheoreticalRobust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain wallsP. Soubelet, Y. Tong, A. Astaburuaga Hernandez, P. Ji et al.arXiv·2025·10.48550/arxiv.2503.15628·arXiv:2503.15628AbstractWe investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe₂ to ferroelectric domain walls (DW) in periodically poled LiNbO3. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce the dipolar exciton confinement via the Stark effect. Spatially resolved photoluminescence (PL) spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe₂ neutral exciton by up to ~100 meV, depending on the sample structure. The spatial distribution, excitation energy response and polarization properties of the emission is consistent with signatures of 1D-confined excitons. The large electric field gradients accessible via proximal ferroelectric systems open up new avenues for the creation of robust quantum-confined excitons in atomically thin materials and their heterostructures.Read more
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.3 characterizations18 properties4 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalRobust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain wallsP. Soubelet, Y. Tong, A. Astaburuaga Hernandez, P. Ji et al.arXiv·2025·10.48550/arxiv.2503.15628·arXiv:2503.15628AbstractWe investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe₂ to ferroelectric domain walls (DW) in periodically poled LiNbO3. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce the dipolar exciton confinement via the Stark effect. Spatially resolved photoluminescence (PL) spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe₂ neutral exciton by up to ~100 meV, depending on the sample structure. The spatial distribution, excitation energy response and polarization properties of the emission is consistent with signatures of 1D-confined excitons. The large electric field gradients accessible via proximal ferroelectric systems open up new avenues for the creation of robust quantum-confined excitons in atomically thin materials and their heterostructures.Read more
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.3 characterizations18 properties4 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalRobust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain wallsP. Soubelet, Y. Tong, A. Astaburuaga Hernandez, P. Ji et al.arXiv·2025·10.48550/arxiv.2503.15628·arXiv:2503.15628AbstractWe investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe₂ to ferroelectric domain walls (DW) in periodically poled LiNbO3. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce the dipolar exciton confinement via the Stark effect. Spatially resolved photoluminescence (PL) spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe₂ neutral exciton by up to ~100 meV, depending on the sample structure. The spatial distribution, excitation energy response and polarization properties of the emission is consistent with signatures of 1D-confined excitons. The large electric field gradients accessible via proximal ferroelectric systems open up new avenues for the creation of robust quantum-confined excitons in atomically thin materials and their heterostructures.Read more
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.3 characterizations18 properties4 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationTheoreticalRobust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain wallsP. Soubelet, Y. Tong, A. Astaburuaga Hernandez, P. Ji et al.arXiv·2025·10.48550/arxiv.2503.15628·arXiv:2503.15628AbstractWe investigate the confinement of neutral excitons in a one-dimensional (1D) potential, engineered by proximizing hBN-encapsulated monolayer MoSe₂ to ferroelectric domain walls (DW) in periodically poled LiNbO3. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce the dipolar exciton confinement via the Stark effect. Spatially resolved photoluminescence (PL) spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe₂ neutral exciton by up to ~100 meV, depending on the sample structure. The spatial distribution, excitation energy response and polarization properties of the emission is consistent with signatures of 1D-confined excitons. The large electric field gradients accessible via proximal ferroelectric systems open up new avenues for the creation of robust quantum-confined excitons in atomically thin materials and their heterostructures.Read more
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.3 characterizations18 properties4 figuresExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand
hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.1 propertyExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or ContactExpand