Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

P. Soubelet; Y. Tong; A. Astaburuaga Hernandez; P. Ji; K. Gallo; A. V. Stier; J. J. Finley

doi:10.48550/arxiv.2503.15628

Paper details

Research paper

Experimental CharacterizationTheoretical

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

P. Soubelet, Y. Tong, A. Astaburuaga Hernandez, P. Ji et al.

arXiv·2025·10.48550/arxiv.2503.15628·arXiv:2503.15628

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

3 characterizations18 properties4 figures

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or Contact

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

1 property

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or Contact

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

1 property

ExperimentalMoSe₂Studied MaterialhBNSubstrate / DielectricLiNbO₃Substrate / DielectricCCapping Or Contact

Materials

MoSe₂

Studied Material

Also known as

1L-MoSe₂monolayer MoSe₂

Variables

layer_count= 1

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	neutral exciton	XeV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	trion	X−eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	LX emission window	1.595-1.615eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	50meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	70meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	120meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX0eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX1eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Fwhm	LX₀ linewidth	0.4meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX₁ spacing from LX₀	3meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Exponent	power-law exponent s	0.97	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	low-temperature activation energy E₁	2meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	47meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	40meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	32meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	PLE enhancement on X resonance	2orders_of_magnitude	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	maximum redshift from neutral exciton	100meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	exciton center-of-mass confinement length scale	3nm	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP−	9000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP+	36000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	regex-detected PL peak	500nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	neutral exciton	XeV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	trion	X−eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	LX emission window	1.595-1.615eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	50meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	70meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	120meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX0eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX1eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Fwhm	LX₀ linewidth	0.4meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX₁ spacing from LX₀	3meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Exponent	power-law exponent s	0.97	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	low-temperature activation energy E₁	2meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	47meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	40meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	32meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	PLE enhancement on X resonance	2orders_of_magnitude	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	maximum redshift from neutral exciton	100meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	exciton center-of-mass confinement length scale	3nm	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP−	9000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP+	36000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	regex-detected PL peak	500nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	neutral exciton	XeV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	trion	X−eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	LX emission window	1.595-1.615eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	50meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	70meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	120meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX0eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX1eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Fwhm	LX₀ linewidth	0.4meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX₁ spacing from LX₀	3meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Exponent	power-law exponent s	0.97	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	low-temperature activation energy E₁	2meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	47meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	40meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	32meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	PLE enhancement on X resonance	2orders_of_magnitude	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	maximum redshift from neutral exciton	100meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	exciton center-of-mass confinement length scale	3nm	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP−	9000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP+	36000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	regex-detected PL peak	500nm	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	neutral exciton	XeV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	trion	X−eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	LX emission window	1.595-1.615eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	50meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	70meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX redshift from X	120meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX0eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	localized exciton line	LX1eV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Fwhm	LX₀ linewidth	0.4meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	LX₁ spacing from LX₀	3meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Exponent	power-law exponent s	0.97	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	low-temperature activation energy E₁	2meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	47meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	40meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	high-temperature activation energy E₂	32meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	PLE enhancement on X resonance	2orders_of_magnitude	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	maximum redshift from neutral exciton	100meV	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Peak Shift	exciton center-of-mass confinement length scale	3nm	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP−	9000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
Pl Intensity Ratio	free charge density nP+	36000000000cm⁻²	MoSe₂	hBN-encapsulated monolayer MoSe₂ transferred onto periodical		—
PL Peak	regex-detected PL peak	500nm	MoSe₂	—	—	—

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Robust trapping of 2D excitons in an engineered 1D potential from proximal ferroelectric domain walls

Samples

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO₃ with a thin graphite top gate; sample 1 with 8 nm bottom hBN.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 2 with a different bottom hBN thickness than sample 1.

hBN-encapsulated monolayer MoSe₂ transferred onto periodically poled LiNbO3; sample 3 with a different bottom hBN thickness than samples 1 and 2.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations