Research paperComputational DFTHigh Throughput ScreeningUnveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasetsPengru Huang, Ruslan luckin, Maxim Faleev, Nikita Kazeev et al.2022·10.48550/arXiv.2010.09435·arXiv:2212.02110AbstractThe paper presents high-throughput DFT datasets for point and high-density defects in 2D materials (MoS2, WSe2, hBN, GaSe, InSe, and black phosphorus), and analyzes correlations between defect formation energy and electronic properties such as band gap.Read more
8x8 monolayer MoS₂ supercell used for simple point-defect calculations.12 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
8x8 monolayer WSe₂ supercell used for simple point-defect calculations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer MoS₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer WSe₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer hBN supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftBNStudied MaterialExpand
Monolayer GaSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftGaSeStudied MaterialExpand
Monolayer InSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftInSeStudied MaterialExpand
Monolayer black phosphorus supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftPStudied MaterialExpand
Research paperComputational DFTHigh Throughput ScreeningUnveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasetsPengru Huang, Ruslan luckin, Maxim Faleev, Nikita Kazeev et al.2022·10.48550/arXiv.2010.09435·arXiv:2212.02110AbstractThe paper presents high-throughput DFT datasets for point and high-density defects in 2D materials (MoS2, WSe2, hBN, GaSe, InSe, and black phosphorus), and analyzes correlations between defect formation energy and electronic properties such as band gap.Read more
8x8 monolayer MoS₂ supercell used for simple point-defect calculations.12 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
8x8 monolayer WSe₂ supercell used for simple point-defect calculations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer MoS₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer WSe₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer hBN supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftBNStudied MaterialExpand
Monolayer GaSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftGaSeStudied MaterialExpand
Monolayer InSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftInSeStudied MaterialExpand
Monolayer black phosphorus supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftPStudied MaterialExpand
Research paperComputational DFTHigh Throughput ScreeningUnveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasetsPengru Huang, Ruslan luckin, Maxim Faleev, Nikita Kazeev et al.2022·10.48550/arXiv.2010.09435·arXiv:2212.02110AbstractThe paper presents high-throughput DFT datasets for point and high-density defects in 2D materials (MoS2, WSe2, hBN, GaSe, InSe, and black phosphorus), and analyzes correlations between defect formation energy and electronic properties such as band gap.Read more
8x8 monolayer MoS₂ supercell used for simple point-defect calculations.12 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
8x8 monolayer WSe₂ supercell used for simple point-defect calculations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer MoS₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer WSe₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer hBN supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftBNStudied MaterialExpand
Monolayer GaSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftGaSeStudied MaterialExpand
Monolayer InSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftInSeStudied MaterialExpand
Monolayer black phosphorus supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftPStudied MaterialExpand
Research paperComputational DFTHigh Throughput ScreeningUnveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasetsPengru Huang, Ruslan luckin, Maxim Faleev, Nikita Kazeev et al.2022·10.48550/arXiv.2010.09435·arXiv:2212.02110AbstractThe paper presents high-throughput DFT datasets for point and high-density defects in 2D materials (MoS2, WSe2, hBN, GaSe, InSe, and black phosphorus), and analyzes correlations between defect formation energy and electronic properties such as band gap.Read more
8x8 monolayer MoS₂ supercell used for simple point-defect calculations.12 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
8x8 monolayer WSe₂ supercell used for simple point-defect calculations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer MoS₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftMoS₂Studied MaterialExpand
Monolayer WSe₂ supercell used for randomly generated high-density vacancy/substitution defect configurations.No measurements recordedSimulated Supercell DftWSe₂Studied MaterialExpand
Monolayer hBN supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftBNStudied MaterialExpand
Monolayer GaSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftGaSeStudied MaterialExpand
Monolayer InSe supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftInSeStudied MaterialExpand
Monolayer black phosphorus supercell used for randomly generated high-density defect configurations.No measurements recordedSimulated Supercell DftPStudied MaterialExpand