Floquet engineering of titled and gapped Dirac materials

Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Floquet engineering of titled and gapped Dirac materials

Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Floquet engineering of titled and gapped Dirac materials

Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors

Floquet engineering of titled and gapped Dirac materials

Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs

Interaction of oxygen with pristine and defective MoS2 monolayers

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

Tuning the Magnetic Anisotropy Energy of MoS2-supported Mn12 complexes by Electric Field: A First-Principles Study

Reevaluating the electrical impact of atomic carbon impurities in MoS2

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors