Floquet engineering of titled and gapped Dirac materials

Andrii Iurov; Liubov Zhemchuzhna; Godfrey Gumbs; Danhong Huang; Kathy Blaise; Chinedu Ejiogu

doi:10.48550/arxiv.2206.09470

Paper details

Research paper

TheoreticalComputational Kinetic Model

Floquet engineering of titled and gapped Dirac materials

Andrii Iurov, Liubov Zhemchuzhna, Godfrey Gumbs, Danhong Huang et al.

2022·10.48550/arxiv.2206.09470·arXiv:2206.09470

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

5 properties

Simulated Supercell DftMoS₂Studied Material

Materials

1T′-MoS₂

MoS₂

Studied Material

Also known as

tetragonal molybdenum disulfide1T prime MoS₂

Variables

phase= 1T′

dimensionality= monolayer

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Floquet engineering of titled and gapped Dirac materials | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Computed Band Structure	undressed 1T′-MoS₂ spectrum	tilted and anisotropic Dirac bands	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap	indirect and field-tunableeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap closing threshold	closes at critical out-of-plane electric fieldeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	phase classification	topological insulator or regular band insulator depending on field and valley/spin indices	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	Floquet topological response	circularly polarized dressing field can break time-reversal symmetry and induce non-zero Chern number	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—

Properties

Type	Label	Value	Material	Sample	Source
Computed Band Structure	undressed 1T′-MoS₂ spectrum	tilted and anisotropic Dirac bands	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap	indirect and field-tunableeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap closing threshold	closes at critical out-of-plane electric fieldeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	phase classification	topological insulator or regular band insulator depending on field and valley/spin indices	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	Floquet topological response	circularly polarized dressing field can break time-reversal symmetry and induce non-zero Chern number	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—

Properties

Type	Label	Value	Material	Sample	Source
Computed Band Structure	undressed 1T′-MoS₂ spectrum	tilted and anisotropic Dirac bands	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap	indirect and field-tunableeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap closing threshold	closes at critical out-of-plane electric fieldeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	phase classification	topological insulator or regular band insulator depending on field and valley/spin indices	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	Floquet topological response	circularly polarized dressing field can break time-reversal symmetry and induce non-zero Chern number	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—

Properties

Type	Label	Value	Material	Sample	Source
Computed Band Structure	undressed 1T′-MoS₂ spectrum	tilted and anisotropic Dirac bands	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap	indirect and field-tunableeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Optical Band Gap	bandgap closing threshold	closes at critical out-of-plane electric fieldeV	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	phase classification	topological insulator or regular band insulator depending on field and valley/spin indices	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—
Computed Band Structure	Floquet topological response	circularly polarized dressing field can break time-reversal symmetry and induce non-zero Chern number	MoS₂	Analytical/theoretical model of monolayer 1T′-MoS₂ electroni	—

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Floquet engineering of titled and gapped Dirac materials

Samples

Analytical/theoretical model of monolayer 1T′-MoS₂ electronic structure under a periodic dressing field, including valley- and spin-resolved dressed states for linear and circular polarizations.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations