Research paper
Computational DFTTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
4 properties
12 properties
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Adsorption Energy Range | adsorption energy variation across configurations | 0.74eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.87eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.2eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 1.81eV | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 1.98angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.23angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.94angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.53angstrom | — | |||
| Charge Transfer | electron gain by Mn₁₂-H from MoS₂ | 0.476electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CH₃ from MoS₂ | 0.356electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CHCl₂ from MoS₂ | 0.617electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-C₆H₅ from MoS₂ | 0.796electrons | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 23.066meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 23.67meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 17.762meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 10.403meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.763meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 5.715meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.689meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 4.788meV | — | |||
| Energy Barrier | two-level system transition barrier | 0.63eV | — | |||
| Energy Barrier Change | maximum reduction in transition barrier under electric field | 0.05eV | — | |||
| Magnetic Moment | heterostructure magnetic moment exceeds this value | 20uB | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.007electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.042electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect
Engineering frictional characteristics of MoS2 structure by tuning thickness and morphology- An atomic, electronic structure, and exciton analysis
Edge Magnetism in Colloidal MoS2 Triangular Nanoflakes
Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors
Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers
Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations
Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials
Interaction of oxygen with pristine and defective MoS2 monolayers
Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees
Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
4 properties
12 properties
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Adsorption Energy Range | adsorption energy variation across configurations | 0.74eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.87eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.2eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 1.81eV | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 1.98angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.23angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.94angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.53angstrom | — | |||
| Charge Transfer | electron gain by Mn₁₂-H from MoS₂ | 0.476electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CH₃ from MoS₂ | 0.356electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CHCl₂ from MoS₂ | 0.617electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-C₆H₅ from MoS₂ | 0.796electrons | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 23.066meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 23.67meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 17.762meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 10.403meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.763meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 5.715meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.689meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 4.788meV | — | |||
| Energy Barrier | two-level system transition barrier | 0.63eV | — | |||
| Energy Barrier Change | maximum reduction in transition barrier under electric field | 0.05eV | — | |||
| Magnetic Moment | heterostructure magnetic moment exceeds this value | 20uB | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.007electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.042electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect
Engineering frictional characteristics of MoS2 structure by tuning thickness and morphology- An atomic, electronic structure, and exciton analysis
Edge Magnetism in Colloidal MoS2 Triangular Nanoflakes
Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors
Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers
Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations
Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials
Interaction of oxygen with pristine and defective MoS2 monolayers
Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees
Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
4 properties
12 properties
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Adsorption Energy Range | adsorption energy variation across configurations | 0.74eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.87eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.2eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 1.81eV | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 1.98angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.23angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.94angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.53angstrom | — | |||
| Charge Transfer | electron gain by Mn₁₂-H from MoS₂ | 0.476electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CH₃ from MoS₂ | 0.356electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CHCl₂ from MoS₂ | 0.617electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-C₆H₅ from MoS₂ | 0.796electrons | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 23.066meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 23.67meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 17.762meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 10.403meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.763meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 5.715meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.689meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 4.788meV | — | |||
| Energy Barrier | two-level system transition barrier | 0.63eV | — | |||
| Energy Barrier Change | maximum reduction in transition barrier under electric field | 0.05eV | — | |||
| Magnetic Moment | heterostructure magnetic moment exceeds this value | 20uB | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.007electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.042electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect
Engineering frictional characteristics of MoS2 structure by tuning thickness and morphology- An atomic, electronic structure, and exciton analysis
Edge Magnetism in Colloidal MoS2 Triangular Nanoflakes
Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors
Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers
Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations
Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials
Interaction of oxygen with pristine and defective MoS2 monolayers
Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees
Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
7 properties
4 properties
12 properties
4 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Adsorption Energy Range | adsorption energy variation across configurations | 0.74eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.87eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 0.2eV | — | |||
| Adsorption Energy Range | adsorption energy variation across configurations | 1.81eV | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 1.98angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.23angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.94angstrom | — | |||
| Adsorption Distance | nearest atom to top-layer S plane distance | 2.53angstrom | — | |||
| Charge Transfer | electron gain by Mn₁₂-H from MoS₂ | 0.476electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CH₃ from MoS₂ | 0.356electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-CHCl₂ from MoS₂ | 0.617electrons | — | |||
| Charge Transfer | electron gain by Mn₁₂-C₆H₅ from MoS₂ | 0.796electrons | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 23.066meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 23.67meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 17.762meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 10.403meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.763meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 5.715meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (frozen structure) | 5.689meV | — | |||
| Magnetic Anisotropy Energy | Mn₁₂-CHCl₂ on MoS₂ (optimized structure) | 4.788meV | — | |||
| Energy Barrier | two-level system transition barrier | 0.63eV | — | |||
| Energy Barrier Change | maximum reduction in transition barrier under electric field | 0.05eV | — | |||
| Magnetic Moment | heterostructure magnetic moment exceeds this value | 20uB | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.007electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.042electrons | — | |||
| Electrons On Mn Core | electrons migrated onto Mn₃+/Mn₄+ ions | 0.022electrons | — |
Related documents with shared materials, methods, properties, or citations.
Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect
Engineering frictional characteristics of MoS2 structure by tuning thickness and morphology- An atomic, electronic structure, and exciton analysis
Edge Magnetism in Colloidal MoS2 Triangular Nanoflakes
Ab Initio Transfer Length Method Simulations of Tunneling Limits in 2D Semiconductors
Symmetry-Based Design Rules for Second-Harmonic Generation in Stacked and Twisted MoS2 Bilayers
Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations
Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials
Interaction of oxygen with pristine and defective MoS2 monolayers
Atomic relaxation and electronic structure in twisted bilayer MoS2 with rotation angle of 5.09 degrees
Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2
Reevaluating the electrical impact of atomic carbon impurities in MoS2
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor