Research paperComputational DFTTheoreticalDistinguishing the importance of different charge trapping centers in CaF₂-based 2D material MOSFETsZhe Zhao, Tao Xiong, Jian Gong, Yue-Yang Liu2023·10.48550/arxiv.2309.06152·arXiv:2309.06152AbstractCrystalline CaF₂ is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than boron nitride and traditional SiO₂ because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF₂-based MOSFETs fabricated in experiment still present notable reliability issues, and the underlying reason remains unclear. Here we studied the various intrinsic defects and adsorbates in CaF₂/MoS₂ and CaF₂/MoSi₂N₄ interface systems to reveal the most active charge trapping centers in CaF₂-based 2D material MOSFETs.Read more
DFT interface model of CaF₂/MoS₂ with defects in MoS₂ and adsorbates at the interface or CaF₂ surface.7 propertiesSimulatedCaF₂Studied MaterialMoS₂Studied MaterialExpand
DFT interface model of CaF₂/MoSi₂N₄ with surface vacancies and adsorbates.3 propertiesSimulatedCaF₂Studied MaterialMoSi₂N₄Studied MaterialExpand
Research paperComputational DFTTheoreticalDistinguishing the importance of different charge trapping centers in CaF₂-based 2D material MOSFETsZhe Zhao, Tao Xiong, Jian Gong, Yue-Yang Liu2023·10.48550/arxiv.2309.06152·arXiv:2309.06152AbstractCrystalline CaF₂ is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than boron nitride and traditional SiO₂ because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF₂-based MOSFETs fabricated in experiment still present notable reliability issues, and the underlying reason remains unclear. Here we studied the various intrinsic defects and adsorbates in CaF₂/MoS₂ and CaF₂/MoSi₂N₄ interface systems to reveal the most active charge trapping centers in CaF₂-based 2D material MOSFETs.Read more
DFT interface model of CaF₂/MoS₂ with defects in MoS₂ and adsorbates at the interface or CaF₂ surface.7 propertiesSimulatedCaF₂Studied MaterialMoS₂Studied MaterialExpand
DFT interface model of CaF₂/MoSi₂N₄ with surface vacancies and adsorbates.3 propertiesSimulatedCaF₂Studied MaterialMoSi₂N₄Studied MaterialExpand
Research paperComputational DFTTheoreticalDistinguishing the importance of different charge trapping centers in CaF₂-based 2D material MOSFETsZhe Zhao, Tao Xiong, Jian Gong, Yue-Yang Liu2023·10.48550/arxiv.2309.06152·arXiv:2309.06152AbstractCrystalline CaF₂ is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than boron nitride and traditional SiO₂ because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF₂-based MOSFETs fabricated in experiment still present notable reliability issues, and the underlying reason remains unclear. Here we studied the various intrinsic defects and adsorbates in CaF₂/MoS₂ and CaF₂/MoSi₂N₄ interface systems to reveal the most active charge trapping centers in CaF₂-based 2D material MOSFETs.Read more
DFT interface model of CaF₂/MoS₂ with defects in MoS₂ and adsorbates at the interface or CaF₂ surface.7 propertiesSimulatedCaF₂Studied MaterialMoS₂Studied MaterialExpand
DFT interface model of CaF₂/MoSi₂N₄ with surface vacancies and adsorbates.3 propertiesSimulatedCaF₂Studied MaterialMoSi₂N₄Studied MaterialExpand
Research paperComputational DFTTheoreticalDistinguishing the importance of different charge trapping centers in CaF₂-based 2D material MOSFETsZhe Zhao, Tao Xiong, Jian Gong, Yue-Yang Liu2023·10.48550/arxiv.2309.06152·arXiv:2309.06152AbstractCrystalline CaF₂ is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than boron nitride and traditional SiO₂ because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF₂-based MOSFETs fabricated in experiment still present notable reliability issues, and the underlying reason remains unclear. Here we studied the various intrinsic defects and adsorbates in CaF₂/MoS₂ and CaF₂/MoSi₂N₄ interface systems to reveal the most active charge trapping centers in CaF₂-based 2D material MOSFETs.Read more
DFT interface model of CaF₂/MoS₂ with defects in MoS₂ and adsorbates at the interface or CaF₂ surface.7 propertiesSimulatedCaF₂Studied MaterialMoS₂Studied MaterialExpand
DFT interface model of CaF₂/MoSi₂N₄ with surface vacancies and adsorbates.3 propertiesSimulatedCaF₂Studied MaterialMoSi₂N₄Studied MaterialExpand
