Research paperComputational DFTTheoreticalComputed PLComputed PhononSuperlubric sliding ferroelectricityZihao Yang, Menghao Wu2017·10.1063/5.0265773·arXiv:2501.16118AbstractSliding ferroelectricity may emerge in many van der Waals bilayers/multilayers and the low switching barriers render ultrafast data writing with low energy cost. We propose a type of superlubric sliding ferroelectricity in homobilayers separated by a different layer that leads to unprecedented low switching barriers due to incommensurate interfaces. For example, the switching barrier of 3R bilayer MoS₂ is greatly reduced when separated by graphene or BN monolayers, and the required voltage for switching can be about one order of magnitude lower.Read more
3R bilayer MoS₂ sliding ferroelectric homobilayer.5 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
MoS₂/Gr/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.7 propertiesSimulated Supercell DftMoS₂Studied MaterialCStudied MaterialExpand
MoS₂/BN/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.8 propertiesSimulated Supercell DftMoS₂Studied MaterialBNStudied MaterialExpand
Antiparallel stacking SnS₂ bilayer and BN-separated SnS₂ sandwich system discussed as an additional example.4 propertiesSimulated Supercell DftSnS₂Studied MaterialBNStudied MaterialExpand
Untwisted BN/Gr/BN trilayer example discussed for comparison and twist-induced incommensurability.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalComputed PLComputed PhononSuperlubric sliding ferroelectricityZihao Yang, Menghao Wu2017·10.1063/5.0265773·arXiv:2501.16118AbstractSliding ferroelectricity may emerge in many van der Waals bilayers/multilayers and the low switching barriers render ultrafast data writing with low energy cost. We propose a type of superlubric sliding ferroelectricity in homobilayers separated by a different layer that leads to unprecedented low switching barriers due to incommensurate interfaces. For example, the switching barrier of 3R bilayer MoS₂ is greatly reduced when separated by graphene or BN monolayers, and the required voltage for switching can be about one order of magnitude lower.Read more
3R bilayer MoS₂ sliding ferroelectric homobilayer.5 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
MoS₂/Gr/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.7 propertiesSimulated Supercell DftMoS₂Studied MaterialCStudied MaterialExpand
MoS₂/BN/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.8 propertiesSimulated Supercell DftMoS₂Studied MaterialBNStudied MaterialExpand
Antiparallel stacking SnS₂ bilayer and BN-separated SnS₂ sandwich system discussed as an additional example.4 propertiesSimulated Supercell DftSnS₂Studied MaterialBNStudied MaterialExpand
Untwisted BN/Gr/BN trilayer example discussed for comparison and twist-induced incommensurability.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalComputed PLComputed PhononSuperlubric sliding ferroelectricityZihao Yang, Menghao Wu2017·10.1063/5.0265773·arXiv:2501.16118AbstractSliding ferroelectricity may emerge in many van der Waals bilayers/multilayers and the low switching barriers render ultrafast data writing with low energy cost. We propose a type of superlubric sliding ferroelectricity in homobilayers separated by a different layer that leads to unprecedented low switching barriers due to incommensurate interfaces. For example, the switching barrier of 3R bilayer MoS₂ is greatly reduced when separated by graphene or BN monolayers, and the required voltage for switching can be about one order of magnitude lower.Read more
3R bilayer MoS₂ sliding ferroelectric homobilayer.5 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
MoS₂/Gr/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.7 propertiesSimulated Supercell DftMoS₂Studied MaterialCStudied MaterialExpand
MoS₂/BN/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.8 propertiesSimulated Supercell DftMoS₂Studied MaterialBNStudied MaterialExpand
Antiparallel stacking SnS₂ bilayer and BN-separated SnS₂ sandwich system discussed as an additional example.4 propertiesSimulated Supercell DftSnS₂Studied MaterialBNStudied MaterialExpand
Untwisted BN/Gr/BN trilayer example discussed for comparison and twist-induced incommensurability.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
Research paperComputational DFTTheoreticalComputed PLComputed PhononSuperlubric sliding ferroelectricityZihao Yang, Menghao Wu2017·10.1063/5.0265773·arXiv:2501.16118AbstractSliding ferroelectricity may emerge in many van der Waals bilayers/multilayers and the low switching barriers render ultrafast data writing with low energy cost. We propose a type of superlubric sliding ferroelectricity in homobilayers separated by a different layer that leads to unprecedented low switching barriers due to incommensurate interfaces. For example, the switching barrier of 3R bilayer MoS₂ is greatly reduced when separated by graphene or BN monolayers, and the required voltage for switching can be about one order of magnitude lower.Read more
3R bilayer MoS₂ sliding ferroelectric homobilayer.5 propertiesSimulated Supercell DftMoS₂Studied MaterialExpand
MoS₂/Gr/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.7 propertiesSimulated Supercell DftMoS₂Studied MaterialCStudied MaterialExpand
MoS₂/BN/MoS₂ sandwich trilayer for superlubric sliding ferroelectricity.8 propertiesSimulated Supercell DftMoS₂Studied MaterialBNStudied MaterialExpand
Antiparallel stacking SnS₂ bilayer and BN-separated SnS₂ sandwich system discussed as an additional example.4 propertiesSimulated Supercell DftSnS₂Studied MaterialBNStudied MaterialExpand
Untwisted BN/Gr/BN trilayer example discussed for comparison and twist-induced incommensurability.3 propertiesSimulated Supercell DftBNStudied MaterialCStudied MaterialExpand
