Patent
US 10,901,243GRAPHENE-BASED SEMICONDUCTOR CHIP FOR TUNABLE THz PLASMON GENERATION
Chee Wei Wong
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,901,243Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a three-dimensional schematic illustration of a plasmon apparatus in accordance with embodiments.
Figure 1 B provides a sectional view of a plasmon apparatus in accordance with embodiments.
Figure 1 C provides a top-view optical microscope image of a plasmon apparatus in accordance with embodiments.
Figure 2 provides a diagram of a plasmon apparatus incorporated with a high power picosecond laser in accordance with embodiments.
Figure 3 provides data graphs of transmissions from a plasmon apparatus in accordance with embodiments, where the outer curve shows the SiNW without graphene layers, the inner curve shows the GSiNW, the white dashed curve illustrates the profile of the outer curve after a 11.6 dB linear loss, the …
Figure 4 provides data plots showing the DFG based signal enhancement on spectrum in accordance with embodiments, where (left panel) shows detected intensity after the lock-in amplifier is 0, and (Right panel) shows detected intensity by applying VG = -0.7 V, demonstrating two enhanced peaks (1593.7 …
Figure 5 A provides data plots demonstrating the gate tunability of the DFG plasmons generated on graphene in accordance with embodiments.
Figure 5 B, provides dataplots where the top panel shows the measured 'VG- I SD' correlation of the GSiNW, under a fixed VSD = 0.01 V, and the bottom panel shows the Fermi level of the bottom layer graphene and the top layer graphene, based on the measured ' VG-ISD', in accordance with embodiments.
Figures 5 C and 5 D, provide measured spectra of the A IDFG, in accordance with embodiments, where V G mapping step is 0. 05 V and bottom and top layer peaks are marked by arrows.
Figures 5 E and 5 F provide data plots showing that fSP and plasmon intensity is tunable via V G in accordance with embodiments, where 5 E shows the effective band of the L-band EDFA (1 5 70 nm⁻¹⁶¹⁰ nm) and 5 F the noise up to ± 0.04 a.u. marked by a grey area and error bars.
Figures 6A to 6D provide data plots on backward phase matching conditions for the graphene plasmonic dispersion in accordance with embodiments, where 3A shows the calculated dispersion of the graphene plasmon at V G = 0 V, 3B is a zoom in of 3A, where grey dashed lines: show that by tuning A p from …
Figures 7A to 7D provide data plots on conversion efficiency in accordance with embodiments, where 7A is under V G = 0 V, 7B is under V G = -0.7 V, 7 C is the calculated X e 2 ? and 1/L s P during the gate tuning, and 4D is the conversion efficiency of the DFG graphene plasmon on chip (Note: dots …
Figures 8A to 8D provide data plots on the properties of the tunable plasmons in accordance with embodiments, where 8A shows the effective index (n s P) and wavelength (As P) of the generated graphene pla s mon s by tuning V G in ± 1 V; 8B shows (Left) measured linewidth of the enhanced peaks …
Figure 9 provides schematic diagrams of a fabrication process in accordance with embodiments.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 12A and 12B provide diagrams and data demonstrating signal balanced detecting and locked-in amplifying in accordance with embodiments, where 12A provides a technical schematic of the C W signal processing; and 12B provides comparisons: DC component (original C W light), noise, 100 kHz gain, …
Figures 13A to 13 C provide signal balanced detecting and locked-in amplifying diagrams and data in accordance with embodimets, where 13A and inset provide images of exemplary gating of the graphene based semiconductor chip; 13B provides an image of a hysteresis loop of the GSiNW; and 13 C provides …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 16A and 16B provide data plots of measured spectra in accordance with embodiments, where 16A provides enhanced peaks for -0.7 V to-0.3 V; and 16B provides enhanced peaks for -0.2 V to + 0.2 V, where the grey curve is the background illustrating noise intensity ± 0.05 a.u.
Figure 17 provides enhanced spectra in accordance with embodiment, with: pump off; GSiNW with 30 m thick A l203; GSiNW with 60 nm thick A l203, and where the Inset provides an image of the GSiNW with 60 nm thick A l203.
Figures 18A and 18B provide tuning pump frequencies in accordance with embodiments, where 18A provides a spectra of the enhanced signal, when A p changes from 1532 nm to 1542 nm; and 18B provides a map of the 'A p -As ' correlation when A p is 1532 nm, f sP is ~ 7.5 THz, when Ap is 1542 nm, f sP …
Figures 19A to 19E provide diagrams and data of exemplary mode distributions in accordance with embodiments, where 19A provides a sectional view of the silicon nitride waveguide without graphene coverage; 19B provides a sectional view of the silicon nitride waveguide with graphene-A l203 -graphene …
Figures 20A and 20B provide graphene conductivity and permittivity data results in accordance with embodiments, where 20A shows the calculated conductivity of graphene, with Fermi level 0.1 eV, 0.2 eV and 0.4 eV; and 20B shows the calculated permittivity of graphene, with Fermi level 0.1 eV, 0.2 eV …
Figures 21A to 21 C provide phase matching data in accordance with embodiments, where 21A provides graphene f-k dispersion, under Fermi level of 0.1 eV, 0.2 eV, 0.4 eV and 0.8 eV; 21B provides calculated 1/LSP (k, f) of graphene with Fermi level 0.4 eV, based on RPA method; and 21 C provides a …
Figures 22A and 22B provide plots of 2 nd nonlinear coefficient and effective index of the SPPs in accordance with embodiments, where 22A provides calculated curves of the Xe/2 when fixing f sP ~ 5 THz, 6 THz, 7 THz, and 8 THz; and 22B provides where Wc ore = 1 pm, h c ore = 725 nm, to satisfy the …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon source comprising: a graphene based silicon nitride waveguide; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the waveguide; and wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz fre q uenc v graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Currently amended
The plasmon source of claim 1, wherein the THz frequency of the graphene plasmons are tunable via modulation by application of an external gate voltage through the gate electrode. Original
The plasmon source of claim 1, wherein the waveguide comprises: a silicon nitride bus; a bottom graphene layer disposed atop the bus connecting a drain and a source electrode; an isolator/capacitance layer disposed atop the bottom graphene layer; and a top graphene layer disposed atop the isolator/capacitance layer connecting a gate electrode. Original
The plasmon source of claim 1, wherein [[the]]an isolator/capacitance layer comprises alumina. Currently amended
The plasmon source of claim 1, wherein the pump and signal emissions are polarized. Original
The plasmon source of claim 1, wherein the light source is a picosecond laser. Original
A plasmon source comprising: a graphene based silicon nitride waveguide comprising: a silicon nitride bus, a bottom graphene layer disposed atop the bus connecting a drain and a source electrode, an isolator/capacitance layer disposed atop the bottom graphene layer, and a top graphene layer disposed atop the isolator/capacitance layer; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the top graphene layer; wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Original
The method of claim 11, wherein the bottom graphene layer is deposited by chemical vapor deposition followed by wet transfer. Withdrawn
The method of claim 11, wherein the insulator/capacitance layer is deposited by atomic layer deposition. Withdrawn
The method of claim 11, wherein the source/drain electrode pads are deposited by e -beam evaporation. Withdrawn
The method of forming a plasmon source comprising: forming a graphene based silicon nitride waveguide as in claim 11; connecting the top graphene layer of the waveguide to a gate electrode; and placing at least one light source configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon plasmons are excited within the waveguide via emitted therefrom. Withdrawn nitride waveguide such that THz graphene enhanced difference frequency generation and
A method of forming a plasmon waveguide comprising: providing a chip comprising a graphene based silicon nitride waveguide deposited on a silicon substrate; etching the chip such that a light source in optical communication with said waveguide provides creates a strong light-graphene interaction; depositing a bottom graphene layer atop the etched ship; depositing conductive source-drain electrode pads in connection with the bottom graphene layer; depositing an insulator/capacitance layer atop the bottom graphene layer; and depositing a top graphene layer atop the insulator/capacitance layer. Withdrawn
The method of claim 12, wherein the silicon nitride waveguide is disposed within a Si O 2 cladding disposed on a silicon substrate. Withdrawn
The method of claim 12, wherein the etching comprises one of either chemical etching or plasma dry etching. Withdrawn
The method of claim 12, wherein after etching, the distance between the silicon nitride and the top surface of the waveguide is less than about 20 nm. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based silicon nitride plasmon waveguide (GSiNW)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fermi level at Dirac point (EF ~ 50 meV at VG = 0) | 50 meV | C |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,901,243Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a three-dimensional schematic illustration of a plasmon apparatus in accordance with embodiments.
Figure 1 B provides a sectional view of a plasmon apparatus in accordance with embodiments.
Figure 1 C provides a top-view optical microscope image of a plasmon apparatus in accordance with embodiments.
Figure 2 provides a diagram of a plasmon apparatus incorporated with a high power picosecond laser in accordance with embodiments.
Figure 3 provides data graphs of transmissions from a plasmon apparatus in accordance with embodiments, where the outer curve shows the SiNW without graphene layers, the inner curve shows the GSiNW, the white dashed curve illustrates the profile of the outer curve after a 11.6 dB linear loss, the …
Figure 4 provides data plots showing the DFG based signal enhancement on spectrum in accordance with embodiments, where (left panel) shows detected intensity after the lock-in amplifier is 0, and (Right panel) shows detected intensity by applying VG = -0.7 V, demonstrating two enhanced peaks (1593.7 …
Figure 5 A provides data plots demonstrating the gate tunability of the DFG plasmons generated on graphene in accordance with embodiments.
Figure 5 B, provides dataplots where the top panel shows the measured 'VG- I SD' correlation of the GSiNW, under a fixed VSD = 0.01 V, and the bottom panel shows the Fermi level of the bottom layer graphene and the top layer graphene, based on the measured ' VG-ISD', in accordance with embodiments.
Figures 5 C and 5 D, provide measured spectra of the A IDFG, in accordance with embodiments, where V G mapping step is 0. 05 V and bottom and top layer peaks are marked by arrows.
Figures 5 E and 5 F provide data plots showing that fSP and plasmon intensity is tunable via V G in accordance with embodiments, where 5 E shows the effective band of the L-band EDFA (1 5 70 nm⁻¹⁶¹⁰ nm) and 5 F the noise up to ± 0.04 a.u. marked by a grey area and error bars.
Figures 6A to 6D provide data plots on backward phase matching conditions for the graphene plasmonic dispersion in accordance with embodiments, where 3A shows the calculated dispersion of the graphene plasmon at V G = 0 V, 3B is a zoom in of 3A, where grey dashed lines: show that by tuning A p from …
Figures 7A to 7D provide data plots on conversion efficiency in accordance with embodiments, where 7A is under V G = 0 V, 7B is under V G = -0.7 V, 7 C is the calculated X e 2 ? and 1/L s P during the gate tuning, and 4D is the conversion efficiency of the DFG graphene plasmon on chip (Note: dots …
Figures 8A to 8D provide data plots on the properties of the tunable plasmons in accordance with embodiments, where 8A shows the effective index (n s P) and wavelength (As P) of the generated graphene pla s mon s by tuning V G in ± 1 V; 8B shows (Left) measured linewidth of the enhanced peaks …
Figure 9 provides schematic diagrams of a fabrication process in accordance with embodiments.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 12A and 12B provide diagrams and data demonstrating signal balanced detecting and locked-in amplifying in accordance with embodiments, where 12A provides a technical schematic of the C W signal processing; and 12B provides comparisons: DC component (original C W light), noise, 100 kHz gain, …
Figures 13A to 13 C provide signal balanced detecting and locked-in amplifying diagrams and data in accordance with embodimets, where 13A and inset provide images of exemplary gating of the graphene based semiconductor chip; 13B provides an image of a hysteresis loop of the GSiNW; and 13 C provides …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 16A and 16B provide data plots of measured spectra in accordance with embodiments, where 16A provides enhanced peaks for -0.7 V to-0.3 V; and 16B provides enhanced peaks for -0.2 V to + 0.2 V, where the grey curve is the background illustrating noise intensity ± 0.05 a.u.
Figure 17 provides enhanced spectra in accordance with embodiment, with: pump off; GSiNW with 30 m thick A l203; GSiNW with 60 nm thick A l203, and where the Inset provides an image of the GSiNW with 60 nm thick A l203.
Figures 18A and 18B provide tuning pump frequencies in accordance with embodiments, where 18A provides a spectra of the enhanced signal, when A p changes from 1532 nm to 1542 nm; and 18B provides a map of the 'A p -As ' correlation when A p is 1532 nm, f sP is ~ 7.5 THz, when Ap is 1542 nm, f sP …
Figures 19A to 19E provide diagrams and data of exemplary mode distributions in accordance with embodiments, where 19A provides a sectional view of the silicon nitride waveguide without graphene coverage; 19B provides a sectional view of the silicon nitride waveguide with graphene-A l203 -graphene …
Figures 20A and 20B provide graphene conductivity and permittivity data results in accordance with embodiments, where 20A shows the calculated conductivity of graphene, with Fermi level 0.1 eV, 0.2 eV and 0.4 eV; and 20B shows the calculated permittivity of graphene, with Fermi level 0.1 eV, 0.2 eV …
Figures 21A to 21 C provide phase matching data in accordance with embodiments, where 21A provides graphene f-k dispersion, under Fermi level of 0.1 eV, 0.2 eV, 0.4 eV and 0.8 eV; 21B provides calculated 1/LSP (k, f) of graphene with Fermi level 0.4 eV, based on RPA method; and 21 C provides a …
Figures 22A and 22B provide plots of 2 nd nonlinear coefficient and effective index of the SPPs in accordance with embodiments, where 22A provides calculated curves of the Xe/2 when fixing f sP ~ 5 THz, 6 THz, 7 THz, and 8 THz; and 22B provides where Wc ore = 1 pm, h c ore = 725 nm, to satisfy the …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon source comprising: a graphene based silicon nitride waveguide; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the waveguide; and wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz fre q uenc v graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Currently amended
The plasmon source of claim 1, wherein the THz frequency of the graphene plasmons are tunable via modulation by application of an external gate voltage through the gate electrode. Original
The plasmon source of claim 1, wherein the waveguide comprises: a silicon nitride bus; a bottom graphene layer disposed atop the bus connecting a drain and a source electrode; an isolator/capacitance layer disposed atop the bottom graphene layer; and a top graphene layer disposed atop the isolator/capacitance layer connecting a gate electrode. Original
The plasmon source of claim 1, wherein [[the]]an isolator/capacitance layer comprises alumina. Currently amended
The plasmon source of claim 1, wherein the pump and signal emissions are polarized. Original
The plasmon source of claim 1, wherein the light source is a picosecond laser. Original
A plasmon source comprising: a graphene based silicon nitride waveguide comprising: a silicon nitride bus, a bottom graphene layer disposed atop the bus connecting a drain and a source electrode, an isolator/capacitance layer disposed atop the bottom graphene layer, and a top graphene layer disposed atop the isolator/capacitance layer; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the top graphene layer; wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Original
The method of claim 11, wherein the bottom graphene layer is deposited by chemical vapor deposition followed by wet transfer. Withdrawn
The method of claim 11, wherein the insulator/capacitance layer is deposited by atomic layer deposition. Withdrawn
The method of claim 11, wherein the source/drain electrode pads are deposited by e -beam evaporation. Withdrawn
The method of forming a plasmon source comprising: forming a graphene based silicon nitride waveguide as in claim 11; connecting the top graphene layer of the waveguide to a gate electrode; and placing at least one light source configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon plasmons are excited within the waveguide via emitted therefrom. Withdrawn nitride waveguide such that THz graphene enhanced difference frequency generation and
A method of forming a plasmon waveguide comprising: providing a chip comprising a graphene based silicon nitride waveguide deposited on a silicon substrate; etching the chip such that a light source in optical communication with said waveguide provides creates a strong light-graphene interaction; depositing a bottom graphene layer atop the etched ship; depositing conductive source-drain electrode pads in connection with the bottom graphene layer; depositing an insulator/capacitance layer atop the bottom graphene layer; and depositing a top graphene layer atop the insulator/capacitance layer. Withdrawn
The method of claim 12, wherein the silicon nitride waveguide is disposed within a Si O 2 cladding disposed on a silicon substrate. Withdrawn
The method of claim 12, wherein the etching comprises one of either chemical etching or plasma dry etching. Withdrawn
The method of claim 12, wherein after etching, the distance between the silicon nitride and the top surface of the waveguide is less than about 20 nm. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based silicon nitride plasmon waveguide (GSiNW)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fermi level at Dirac point (EF ~ 50 meV at VG = 0) | 50 meV | C |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,901,243Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a three-dimensional schematic illustration of a plasmon apparatus in accordance with embodiments.
Figure 1 B provides a sectional view of a plasmon apparatus in accordance with embodiments.
Figure 1 C provides a top-view optical microscope image of a plasmon apparatus in accordance with embodiments.
Figure 2 provides a diagram of a plasmon apparatus incorporated with a high power picosecond laser in accordance with embodiments.
Figure 3 provides data graphs of transmissions from a plasmon apparatus in accordance with embodiments, where the outer curve shows the SiNW without graphene layers, the inner curve shows the GSiNW, the white dashed curve illustrates the profile of the outer curve after a 11.6 dB linear loss, the …
Figure 4 provides data plots showing the DFG based signal enhancement on spectrum in accordance with embodiments, where (left panel) shows detected intensity after the lock-in amplifier is 0, and (Right panel) shows detected intensity by applying VG = -0.7 V, demonstrating two enhanced peaks (1593.7 …
Figure 5 A provides data plots demonstrating the gate tunability of the DFG plasmons generated on graphene in accordance with embodiments.
Figure 5 B, provides dataplots where the top panel shows the measured 'VG- I SD' correlation of the GSiNW, under a fixed VSD = 0.01 V, and the bottom panel shows the Fermi level of the bottom layer graphene and the top layer graphene, based on the measured ' VG-ISD', in accordance with embodiments.
Figures 5 C and 5 D, provide measured spectra of the A IDFG, in accordance with embodiments, where V G mapping step is 0. 05 V and bottom and top layer peaks are marked by arrows.
Figures 5 E and 5 F provide data plots showing that fSP and plasmon intensity is tunable via V G in accordance with embodiments, where 5 E shows the effective band of the L-band EDFA (1 5 70 nm⁻¹⁶¹⁰ nm) and 5 F the noise up to ± 0.04 a.u. marked by a grey area and error bars.
Figures 6A to 6D provide data plots on backward phase matching conditions for the graphene plasmonic dispersion in accordance with embodiments, where 3A shows the calculated dispersion of the graphene plasmon at V G = 0 V, 3B is a zoom in of 3A, where grey dashed lines: show that by tuning A p from …
Figures 7A to 7D provide data plots on conversion efficiency in accordance with embodiments, where 7A is under V G = 0 V, 7B is under V G = -0.7 V, 7 C is the calculated X e 2 ? and 1/L s P during the gate tuning, and 4D is the conversion efficiency of the DFG graphene plasmon on chip (Note: dots …
Figures 8A to 8D provide data plots on the properties of the tunable plasmons in accordance with embodiments, where 8A shows the effective index (n s P) and wavelength (As P) of the generated graphene pla s mon s by tuning V G in ± 1 V; 8B shows (Left) measured linewidth of the enhanced peaks …
Figure 9 provides schematic diagrams of a fabrication process in accordance with embodiments.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 12A and 12B provide diagrams and data demonstrating signal balanced detecting and locked-in amplifying in accordance with embodiments, where 12A provides a technical schematic of the C W signal processing; and 12B provides comparisons: DC component (original C W light), noise, 100 kHz gain, …
Figures 13A to 13 C provide signal balanced detecting and locked-in amplifying diagrams and data in accordance with embodimets, where 13A and inset provide images of exemplary gating of the graphene based semiconductor chip; 13B provides an image of a hysteresis loop of the GSiNW; and 13 C provides …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 16A and 16B provide data plots of measured spectra in accordance with embodiments, where 16A provides enhanced peaks for -0.7 V to-0.3 V; and 16B provides enhanced peaks for -0.2 V to + 0.2 V, where the grey curve is the background illustrating noise intensity ± 0.05 a.u.
Figure 17 provides enhanced spectra in accordance with embodiment, with: pump off; GSiNW with 30 m thick A l203; GSiNW with 60 nm thick A l203, and where the Inset provides an image of the GSiNW with 60 nm thick A l203.
Figures 18A and 18B provide tuning pump frequencies in accordance with embodiments, where 18A provides a spectra of the enhanced signal, when A p changes from 1532 nm to 1542 nm; and 18B provides a map of the 'A p -As ' correlation when A p is 1532 nm, f sP is ~ 7.5 THz, when Ap is 1542 nm, f sP …
Figures 19A to 19E provide diagrams and data of exemplary mode distributions in accordance with embodiments, where 19A provides a sectional view of the silicon nitride waveguide without graphene coverage; 19B provides a sectional view of the silicon nitride waveguide with graphene-A l203 -graphene …
Figures 20A and 20B provide graphene conductivity and permittivity data results in accordance with embodiments, where 20A shows the calculated conductivity of graphene, with Fermi level 0.1 eV, 0.2 eV and 0.4 eV; and 20B shows the calculated permittivity of graphene, with Fermi level 0.1 eV, 0.2 eV …
Figures 21A to 21 C provide phase matching data in accordance with embodiments, where 21A provides graphene f-k dispersion, under Fermi level of 0.1 eV, 0.2 eV, 0.4 eV and 0.8 eV; 21B provides calculated 1/LSP (k, f) of graphene with Fermi level 0.4 eV, based on RPA method; and 21 C provides a …
Figures 22A and 22B provide plots of 2 nd nonlinear coefficient and effective index of the SPPs in accordance with embodiments, where 22A provides calculated curves of the Xe/2 when fixing f sP ~ 5 THz, 6 THz, 7 THz, and 8 THz; and 22B provides where Wc ore = 1 pm, h c ore = 725 nm, to satisfy the …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon source comprising: a graphene based silicon nitride waveguide; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the waveguide; and wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz fre q uenc v graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Currently amended
The plasmon source of claim 1, wherein the THz frequency of the graphene plasmons are tunable via modulation by application of an external gate voltage through the gate electrode. Original
The plasmon source of claim 1, wherein the waveguide comprises: a silicon nitride bus; a bottom graphene layer disposed atop the bus connecting a drain and a source electrode; an isolator/capacitance layer disposed atop the bottom graphene layer; and a top graphene layer disposed atop the isolator/capacitance layer connecting a gate electrode. Original
The plasmon source of claim 1, wherein [[the]]an isolator/capacitance layer comprises alumina. Currently amended
The plasmon source of claim 1, wherein the pump and signal emissions are polarized. Original
The plasmon source of claim 1, wherein the light source is a picosecond laser. Original
A plasmon source comprising: a graphene based silicon nitride waveguide comprising: a silicon nitride bus, a bottom graphene layer disposed atop the bus connecting a drain and a source electrode, an isolator/capacitance layer disposed atop the bottom graphene layer, and a top graphene layer disposed atop the isolator/capacitance layer; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the top graphene layer; wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Original
The method of claim 11, wherein the bottom graphene layer is deposited by chemical vapor deposition followed by wet transfer. Withdrawn
The method of claim 11, wherein the insulator/capacitance layer is deposited by atomic layer deposition. Withdrawn
The method of claim 11, wherein the source/drain electrode pads are deposited by e -beam evaporation. Withdrawn
The method of forming a plasmon source comprising: forming a graphene based silicon nitride waveguide as in claim 11; connecting the top graphene layer of the waveguide to a gate electrode; and placing at least one light source configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon plasmons are excited within the waveguide via emitted therefrom. Withdrawn nitride waveguide such that THz graphene enhanced difference frequency generation and
A method of forming a plasmon waveguide comprising: providing a chip comprising a graphene based silicon nitride waveguide deposited on a silicon substrate; etching the chip such that a light source in optical communication with said waveguide provides creates a strong light-graphene interaction; depositing a bottom graphene layer atop the etched ship; depositing conductive source-drain electrode pads in connection with the bottom graphene layer; depositing an insulator/capacitance layer atop the bottom graphene layer; and depositing a top graphene layer atop the insulator/capacitance layer. Withdrawn
The method of claim 12, wherein the silicon nitride waveguide is disposed within a Si O 2 cladding disposed on a silicon substrate. Withdrawn
The method of claim 12, wherein the etching comprises one of either chemical etching or plasma dry etching. Withdrawn
The method of claim 12, wherein after etching, the distance between the silicon nitride and the top surface of the waveguide is less than about 20 nm. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based silicon nitride plasmon waveguide (GSiNW)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fermi level at Dirac point (EF ~ 50 meV at VG = 0) | 50 meV | C |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,901,243Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A provides a three-dimensional schematic illustration of a plasmon apparatus in accordance with embodiments.
Figure 1 B provides a sectional view of a plasmon apparatus in accordance with embodiments.
Figure 1 C provides a top-view optical microscope image of a plasmon apparatus in accordance with embodiments.
Figure 2 provides a diagram of a plasmon apparatus incorporated with a high power picosecond laser in accordance with embodiments.
Figure 3 provides data graphs of transmissions from a plasmon apparatus in accordance with embodiments, where the outer curve shows the SiNW without graphene layers, the inner curve shows the GSiNW, the white dashed curve illustrates the profile of the outer curve after a 11.6 dB linear loss, the …
Figure 4 provides data plots showing the DFG based signal enhancement on spectrum in accordance with embodiments, where (left panel) shows detected intensity after the lock-in amplifier is 0, and (Right panel) shows detected intensity by applying VG = -0.7 V, demonstrating two enhanced peaks (1593.7 …
Figure 5 A provides data plots demonstrating the gate tunability of the DFG plasmons generated on graphene in accordance with embodiments.
Figure 5 B, provides dataplots where the top panel shows the measured 'VG- I SD' correlation of the GSiNW, under a fixed VSD = 0.01 V, and the bottom panel shows the Fermi level of the bottom layer graphene and the top layer graphene, based on the measured ' VG-ISD', in accordance with embodiments.
Figures 5 C and 5 D, provide measured spectra of the A IDFG, in accordance with embodiments, where V G mapping step is 0. 05 V and bottom and top layer peaks are marked by arrows.
Figures 5 E and 5 F provide data plots showing that fSP and plasmon intensity is tunable via V G in accordance with embodiments, where 5 E shows the effective band of the L-band EDFA (1 5 70 nm⁻¹⁶¹⁰ nm) and 5 F the noise up to ± 0.04 a.u. marked by a grey area and error bars.
Figures 6A to 6D provide data plots on backward phase matching conditions for the graphene plasmonic dispersion in accordance with embodiments, where 3A shows the calculated dispersion of the graphene plasmon at V G = 0 V, 3B is a zoom in of 3A, where grey dashed lines: show that by tuning A p from …
Figures 7A to 7D provide data plots on conversion efficiency in accordance with embodiments, where 7A is under V G = 0 V, 7B is under V G = -0.7 V, 7 C is the calculated X e 2 ? and 1/L s P during the gate tuning, and 4D is the conversion efficiency of the DFG graphene plasmon on chip (Note: dots …
Figures 8A to 8D provide data plots on the properties of the tunable plasmons in accordance with embodiments, where 8A shows the effective index (n s P) and wavelength (As P) of the generated graphene pla s mon s by tuning V G in ± 1 V; 8B shows (Left) measured linewidth of the enhanced peaks …
Figure 9 provides schematic diagrams of a fabrication process in accordance with embodiments.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 12A and 12B provide diagrams and data demonstrating signal balanced detecting and locked-in amplifying in accordance with embodiments, where 12A provides a technical schematic of the C W signal processing; and 12B provides comparisons: DC component (original C W light), noise, 100 kHz gain, …
Figures 13A to 13 C provide signal balanced detecting and locked-in amplifying diagrams and data in accordance with embodimets, where 13A and inset provide images of exemplary gating of the graphene based semiconductor chip; 13B provides an image of a hysteresis loop of the GSiNW; and 13 C provides …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 16A and 16B provide data plots of measured spectra in accordance with embodiments, where 16A provides enhanced peaks for -0.7 V to-0.3 V; and 16B provides enhanced peaks for -0.2 V to + 0.2 V, where the grey curve is the background illustrating noise intensity ± 0.05 a.u.
Figure 17 provides enhanced spectra in accordance with embodiment, with: pump off; GSiNW with 30 m thick A l203; GSiNW with 60 nm thick A l203, and where the Inset provides an image of the GSiNW with 60 nm thick A l203.
Figures 18A and 18B provide tuning pump frequencies in accordance with embodiments, where 18A provides a spectra of the enhanced signal, when A p changes from 1532 nm to 1542 nm; and 18B provides a map of the 'A p -As ' correlation when A p is 1532 nm, f sP is ~ 7.5 THz, when Ap is 1542 nm, f sP …
Figures 19A to 19E provide diagrams and data of exemplary mode distributions in accordance with embodiments, where 19A provides a sectional view of the silicon nitride waveguide without graphene coverage; 19B provides a sectional view of the silicon nitride waveguide with graphene-A l203 -graphene …
Figures 20A and 20B provide graphene conductivity and permittivity data results in accordance with embodiments, where 20A shows the calculated conductivity of graphene, with Fermi level 0.1 eV, 0.2 eV and 0.4 eV; and 20B shows the calculated permittivity of graphene, with Fermi level 0.1 eV, 0.2 eV …
Figures 21A to 21 C provide phase matching data in accordance with embodiments, where 21A provides graphene f-k dispersion, under Fermi level of 0.1 eV, 0.2 eV, 0.4 eV and 0.8 eV; 21B provides calculated 1/LSP (k, f) of graphene with Fermi level 0.4 eV, based on RPA method; and 21 C provides a …
Figures 22A and 22B provide plots of 2 nd nonlinear coefficient and effective index of the SPPs in accordance with embodiments, where 22A provides calculated curves of the Xe/2 when fixing f sP ~ 5 THz, 6 THz, 7 THz, and 8 THz; and 22B provides where Wc ore = 1 pm, h c ore = 725 nm, to satisfy the …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon source comprising: a graphene based silicon nitride waveguide; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the waveguide; and wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz fre q uenc v graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Currently amended
The plasmon source of claim 1, wherein the THz frequency of the graphene plasmons are tunable via modulation by application of an external gate voltage through the gate electrode. Original
The plasmon source of claim 1, wherein the waveguide comprises: a silicon nitride bus; a bottom graphene layer disposed atop the bus connecting a drain and a source electrode; an isolator/capacitance layer disposed atop the bottom graphene layer; and a top graphene layer disposed atop the isolator/capacitance layer connecting a gate electrode. Original
The plasmon source of claim 1, wherein [[the]]an isolator/capacitance layer comprises alumina. Currently amended
The plasmon source of claim 1, wherein the pump and signal emissions are polarized. Original
The plasmon source of claim 1, wherein the light source is a picosecond laser. Original
A plasmon source comprising: a graphene based silicon nitride waveguide comprising: a silicon nitride bus, a bottom graphene layer disposed atop the bus connecting a drain and a source electrode, an isolator/capacitance layer disposed atop the bottom graphene layer, and a top graphene layer disposed atop the isolator/capacitance layer; at least one light source in optical communication with said waveguide; a gate electrode in conductive communication with the top graphene layer; wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom. Original
The method of claim 11, wherein the bottom graphene layer is deposited by chemical vapor deposition followed by wet transfer. Withdrawn
The method of claim 11, wherein the insulator/capacitance layer is deposited by atomic layer deposition. Withdrawn
The method of claim 11, wherein the source/drain electrode pads are deposited by e -beam evaporation. Withdrawn
The method of forming a plasmon source comprising: forming a graphene based silicon nitride waveguide as in claim 11; connecting the top graphene layer of the waveguide to a gate electrode; and placing at least one light source configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon plasmons are excited within the waveguide via emitted therefrom. Withdrawn nitride waveguide such that THz graphene enhanced difference frequency generation and
A method of forming a plasmon waveguide comprising: providing a chip comprising a graphene based silicon nitride waveguide deposited on a silicon substrate; etching the chip such that a light source in optical communication with said waveguide provides creates a strong light-graphene interaction; depositing a bottom graphene layer atop the etched ship; depositing conductive source-drain electrode pads in connection with the bottom graphene layer; depositing an insulator/capacitance layer atop the bottom graphene layer; and depositing a top graphene layer atop the insulator/capacitance layer. Withdrawn
The method of claim 12, wherein the silicon nitride waveguide is disposed within a Si O 2 cladding disposed on a silicon substrate. Withdrawn
The method of claim 12, wherein the etching comprises one of either chemical etching or plasma dry etching. Withdrawn
The method of claim 12, wherein after etching, the distance between the silicon nitride and the top surface of the waveguide is less than about 20 nm. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based silicon nitride plasmon waveguide (GSiNW)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fermi level at Dirac point (EF ~ 50 meV at VG = 0) | 50 meV | C |
Voltage |
Related documents with shared materials, methods, properties, or citations.
alumina
Al₂O₃
silicon dioxide
SiO₂
silicon
Si
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
| 0.25–0.8 V |
| — |
Thickness | 1570–1610 nm | — |
Pressure | 1.29–1.47 pA | — |
Thickness | 1601.3–1607.2 nm | — |
Voltage | 0.2–0.2 V | — |
Thickness | 1578.1–1598.6 nm | — |
Thickness | 1532–1542 nm | — |
Thickness | 1593.2–1603 nm | — |
Thickness | 460–466 nm | — |
Thickness | 1560–1690 nm | — |
— | 0.1–0.8 eV | — |
Thickness | ≤ 20 nm | — |
— | ≥ 0.13 eV | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 725 nm | — |
alumina
Al₂O₃
silicon dioxide
SiO₂
silicon
Si
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
| 0.25–0.8 V |
| — |
Thickness | 1570–1610 nm | — |
Pressure | 1.29–1.47 pA | — |
Thickness | 1601.3–1607.2 nm | — |
Voltage | 0.2–0.2 V | — |
Thickness | 1578.1–1598.6 nm | — |
Thickness | 1532–1542 nm | — |
Thickness | 1593.2–1603 nm | — |
Thickness | 460–466 nm | — |
Thickness | 1560–1690 nm | — |
— | 0.1–0.8 eV | — |
Thickness | ≤ 20 nm | — |
— | ≥ 0.13 eV | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 725 nm | — |
alumina
Al₂O₃
silicon dioxide
SiO₂
silicon
Si
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
| 0.25–0.8 V |
| — |
Thickness | 1570–1610 nm | — |
Pressure | 1.29–1.47 pA | — |
Thickness | 1601.3–1607.2 nm | — |
Voltage | 0.2–0.2 V | — |
Thickness | 1578.1–1598.6 nm | — |
Thickness | 1532–1542 nm | — |
Thickness | 1593.2–1603 nm | — |
Thickness | 460–466 nm | — |
Thickness | 1560–1690 nm | — |
— | 0.1–0.8 eV | — |
Thickness | ≤ 20 nm | — |
— | ≥ 0.13 eV | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 725 nm | — |
alumina
Al₂O₃
silicon dioxide
SiO₂
silicon
Si
Figures 1 0 A to 10 F provide diagrams and data plots demonstrating chip etching in accordance with embodiments, where 1 0 A shows an optical microscope image of an etched chip; 10 B provides measured oxide thickness after etching (Inset shows the SEM image, the etched boundary is clear); 10 C …
Figures 15 A to 15 C provide data plots of the saturable absorption induced modulation in accordance with embodiments, where 15 A provides saturable absorption of the GSiNW; 15B provides the modulated signal; and 15 C provides the modulation enhanced 100 kHz signal, amplified by the lock-in …
Figures 23A to 23F show data from an exemplary graphene-A l203 -graphene system in accordance with embodiments, where 23A provides a schematic configuration; 23B provides a correlation of gate voltage and Fermi level; 23B provides simulated plasmon dispersions on the top and bottom graphene layer, …
| 0.25–0.8 V |
| — |
Thickness | 1570–1610 nm | — |
Pressure | 1.29–1.47 pA | — |
Thickness | 1601.3–1607.2 nm | — |
Voltage | 0.2–0.2 V | — |
Thickness | 1578.1–1598.6 nm | — |
Thickness | 1532–1542 nm | — |
Thickness | 1593.2–1603 nm | — |
Thickness | 460–466 nm | — |
Thickness | 1560–1690 nm | — |
— | 0.1–0.8 eV | — |
Thickness | ≤ 20 nm | — |
— | ≥ 0.13 eV | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 725 nm | — |