Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations15 properties3 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
17 GHz Lossless InP-Membrane Active Metasurface
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistors
Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics
XANES absorption spectra of penta-graphene and penta-SiC2 with different terminations: a computational study
On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Time-Bin BB84 QKD System Using Indium Phosphide and Silicon Nitride Photonic Integrated Circuits
Measurements, simulations, and models of the point-spread function of electron-beam lithography
Integrated Telecom Wavelength Heralded Single-Photon Source based on GHz gated detectors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations15 properties3 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
17 GHz Lossless InP-Membrane Active Metasurface
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistors
Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics
XANES absorption spectra of penta-graphene and penta-SiC2 with different terminations: a computational study
On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Time-Bin BB84 QKD System Using Indium Phosphide and Silicon Nitride Photonic Integrated Circuits
Measurements, simulations, and models of the point-spread function of electron-beam lithography
Integrated Telecom Wavelength Heralded Single-Photon Source based on GHz gated detectors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations15 properties3 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
17 GHz Lossless InP-Membrane Active Metasurface
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistors
Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics
XANES absorption spectra of penta-graphene and penta-SiC2 with different terminations: a computational study
On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Time-Bin BB84 QKD System Using Indium Phosphide and Silicon Nitride Photonic Integrated Circuits
Measurements, simulations, and models of the point-spread function of electron-beam lithography
Integrated Telecom Wavelength Heralded Single-Photon Source based on GHz gated detectors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations15 properties3 figures
No measurements recorded
Related documents with shared materials, methods, properties, or citations.
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
17 GHz Lossless InP-Membrane Active Metasurface
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistors
Heterogeneously Integrated Balanced Photodetector on an Ultra-Low Loss Silicon Nitride Delay Line Interferometer
Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures
Spectral effects on the energy harvesting efficiency of 2- and 4-terminal tandem photovoltaics
XANES absorption spectra of penta-graphene and penta-SiC2 with different terminations: a computational study
On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Time-Bin BB84 QKD System Using Indium Phosphide and Silicon Nitride Photonic Integrated Circuits
Measurements, simulations, and models of the point-spread function of electron-beam lithography
Integrated Telecom Wavelength Heralded Single-Photon Source based on GHz gated detectors