Copyright © 2026 Matter42. All rights reserved.

Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys | Matter42 Literature

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys

Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr et al.

2026·arXiv:2603.27307

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystalline 5 nm Fe₁-xCox thin film grown on GaAs(001) with a 100 nm GaAs buffer layer and 3 nm Al capping layer; composition x = 0%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 5.9%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 10%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 15%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 20%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 47%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Why these are connected

Related documents with shared materials, methods, properties, or citations.

paper2023
Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers
growth MBEsubstrate GaAsmaterial GaAscharacterization transport
paper2024
Optical realization of magneto-intersubband oscillations

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys

Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr et al.

2026·arXiv:2603.27307

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystalline 5 nm Fe₁-xCox thin film grown on GaAs(001) with a 100 nm GaAs buffer layer and 3 nm Al capping layer; composition x = 0%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 5.9%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 10%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 15%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 20%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 47%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys

Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr et al.

2026·arXiv:2603.27307

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystalline 5 nm Fe₁-xCox thin film grown on GaAs(001) with a 100 nm GaAs buffer layer and 3 nm Al capping layer; composition x = 0%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 5.9%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 10%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 15%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 20%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 47%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Alloying-Controlled Tuning of Interfacial Spin–Orbit Interaction and Magnetic Damping in Crystalline FeCo Alloys

Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr et al.

2026·arXiv:2603.27307

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single-crystalline 5 nm Fe₁-xCox thin film grown on GaAs(001) with a 100 nm GaAs buffer layer and 3 nm Al capping layer; composition x = 0%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 5.9%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 10%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 15%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 20%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Single-crystalline 5 nm Fe₁-xCox thin film on GaAs(001) with 100 nm GaAs buffer and 3 nm Al cap; composition x = 47%.

1 preparation2 characterizations3 properties5 figures

ExperimentalFe₁-xCoxStudied MaterialGaAsSubstrate / DielectricAlCapping Or Contact

Why these are connected

Related documents with shared materials, methods, properties, or citations.