Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single mesoscopic GaAs quantum well channel with variable-width sections of 4, 10, and 50 µm; the quantum well is 46 nm thick and is grown on a (100)-oriented GaAs substrate with short-period GaAs/AlAs superlattice barriers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single mesoscopic GaAs quantum well channel with variable-width sections of 4, 10, and 50 µm; the quantum well is 46 nm thick and is grown on a (100)-oriented GaAs substrate with short-period GaAs/AlAs superlattice barriers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single mesoscopic GaAs quantum well channel with variable-width sections of 4, 10, and 50 µm; the quantum well is 46 nm thick and is grown on a (100)-oriented GaAs substrate with short-period GaAs/AlAs superlattice barriers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single mesoscopic GaAs quantum well channel with variable-width sections of 4, 10, and 50 µm; the quantum well is 46 nm thick and is grown on a (100)-oriented GaAs substrate with short-period GaAs/AlAs superlattice barriers.