Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Mesoscopic n-doped GaAs quantum well channel used for magneto-photoluminescence measurements; 5 µm wide and 100 µm long, with a 14 nm GaAs QW, short-period GaAs/AlAs superlattice barriers, and Si delta-doping separated from the QW by 4.5 nm spacers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Mesoscopic n-doped GaAs quantum well channel used for magneto-photoluminescence measurements; 5 µm wide and 100 µm long, with a 14 nm GaAs QW, short-period GaAs/AlAs superlattice barriers, and Si delta-doping separated from the QW by 4.5 nm spacers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Mesoscopic n-doped GaAs quantum well channel used for magneto-photoluminescence measurements; 5 µm wide and 100 µm long, with a 14 nm GaAs QW, short-period GaAs/AlAs superlattice barriers, and Si delta-doping separated from the QW by 4.5 nm spacers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Mesoscopic n-doped GaAs quantum well channel used for magneto-photoluminescence measurements; 5 µm wide and 100 µm long, with a 14 nm GaAs QW, short-period GaAs/AlAs superlattice barriers, and Si delta-doping separated from the QW by 4.5 nm spacers.