A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being l ocated proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; conveying the metal substrate by the carbonaceous electrode via a reel-to-reel processing line between a pay-out reel and a take-up reel; applying a potential between the metal substrate and the carbonaceous electrode via the reel-to-reel processing line; flowing a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma upon exciting the plasma-forming gas; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species, while -16- DM US 49124291-40904240130 Attorney Docket No. SS-00728 (090424-0130) the metal substrate is being conveyed.

A system comprising: a reaction chamber; a reel-to-reel processing line configured to convey a metal substrate within the reaction chamber between a pay-out reel and a take-up reel; a carbonaceous electrode housed within the reaction chamber and disposed proximate to a location through which the metal substrate is conveyed; wherein the carbonaceous electrode and the reel-to-reel processing line are electrically connected so as to apply a potential between the metal substrate and the carbonaceous electrode; and a gas inlet configured to flow a plasma-forming gas in a gap between the metal substrate and the carbonaceous electrode.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being l ocated proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; conveying the metal substrate by the carbonaceous electrode via a reel-to-reel processing line between a pay-out reel and a take-up reel; applying a potential between the metal substrate and the carbonaceous electrode via the reel-to-reel processing line; flowing a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma upon exciting the plasma-forming gas; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species, while -16- DM US 49124291-40904240130 Attorney Docket No. SS-00728 (090424-0130) the metal substrate is being conveyed.

A system comprising: a reaction chamber; a reel-to-reel processing line configured to convey a metal substrate within the reaction chamber between a pay-out reel and a take-up reel; a carbonaceous electrode housed within the reaction chamber and disposed proximate to a location through which the metal substrate is conveyed; wherein the carbonaceous electrode and the reel-to-reel processing line are electrically connected so as to apply a potential between the metal substrate and the carbonaceous electrode; and a gas inlet configured to flow a plasma-forming gas in a gap between the metal substrate and the carbonaceous electrode.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being l ocated proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; conveying the metal substrate by the carbonaceous electrode via a reel-to-reel processing line between a pay-out reel and a take-up reel; applying a potential between the metal substrate and the carbonaceous electrode via the reel-to-reel processing line; flowing a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma upon exciting the plasma-forming gas; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species, while -16- DM US 49124291-40904240130 Attorney Docket No. SS-00728 (090424-0130) the metal substrate is being conveyed.

A system comprising: a reaction chamber; a reel-to-reel processing line configured to convey a metal substrate within the reaction chamber between a pay-out reel and a take-up reel; a carbonaceous electrode housed within the reaction chamber and disposed proximate to a location through which the metal substrate is conveyed; wherein the carbonaceous electrode and the reel-to-reel processing line are electrically connected so as to apply a potential between the metal substrate and the carbonaceous electrode; and a gas inlet configured to flow a plasma-forming gas in a gap between the metal substrate and the carbonaceous electrode.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being l ocated proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.

A method for production of graphene by plasma-enhanced chemical vapor deposition, the method comprising: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; conveying the metal substrate by the carbonaceous electrode via a reel-to-reel processing line between a pay-out reel and a take-up reel; applying a potential between the metal substrate and the carbonaceous electrode via the reel-to-reel processing line; flowing a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma upon exciting the plasma-forming gas; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species, while -16- DM US 49124291-40904240130 Attorney Docket No. SS-00728 (090424-0130) the metal substrate is being conveyed.

A system comprising: a reaction chamber; a reel-to-reel processing line configured to convey a metal substrate within the reaction chamber between a pay-out reel and a take-up reel; a carbonaceous electrode housed within the reaction chamber and disposed proximate to a location through which the metal substrate is conveyed; wherein the carbonaceous electrode and the reel-to-reel processing line are electrically connected so as to apply a potential between the metal substrate and the carbonaceous electrode; and a gas inlet configured to flow a plasma-forming gas in a gap between the metal substrate and the carbonaceous electrode.