Process for producing a graphene film

Jean DIJON

Patent

Atlas literature

Patent

US 10,337,102

Process for producing a graphene film

Jean DIJON

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

13 independent · 13 dependent

1
Independent
1-18. Canceled
18
Independent
Canceled
19
Independentgraphene filmsolid carbon source
Fabrication method of a graphene ﬁlm comprising the following successive steps:-placing a substrate and a solid carbon source in a reaction chamber, provided with a gas inlet,-heating the solid carbon source, by ﬂow of a current in said solid carbon source, under a gas ﬂow, the gas being devoid of carbonaceous organic molecules, so as to convert at least a part of the solid carbon source into the graphene ﬁlm on a surface of the substrate, the solid carbon source emitting an irradiation wavelength heating the surface of the substrate, wherein a shutter made from a material transparent to the irradiation wavelength is disposed between the substrate and the solid carbon source so that heat emitted by the solid carbon source is transmitted to the surface of the substrate by irradiation through the shutter, the shutter being conﬁgured to control a quantity of carbonaceous species reaching the substrate from the solid carbon source and to control a graphene growth rate. Previously presented
1. 20
  Dependent← claim 19
  Method according to claim 19, wherein during the heating step, the temperature of the substrate is lower than or equal to 800 °C. Previously presented
2. 23
  Dependent← claim 19
  Method according to claim 19, wherein the substrate is heated only by the solid carbon source. Previously presented
3. 27
  Dependent← claim 19
  Method according to claim 19, wherein the solid carbon source is arranged above a surface of the substrate, at a distance comprised between 0.5cm and 2.5cm. Previously presented
4. 29
  Dependent← claim 19metallic thin layer
  Method according to claim 19, wherein the substrate is formed by a bulk material covered by a metallic thin layer, said metallic thin layer having a thickness comprised between 100 nm and 400nm. Previously presented
5. 34
  Dependent← claim 19
  Method according to claim 19, wherein the shutter is closed when a temperature increase takes place in the heating step and the shutter is open during a temperature plateau in the heating step. Previously presented
6. 35
  Dependent← claim 19
  Method according to claim 19, wherein the shutter is closed when a temperature increase takes place in the heating step and during a temperature plateau in the heating step. Previously presented
7. 39
  Dependent← claim 19
  Method according to claim 19, further comprising maintaining a temperature of the substrate lower than or equal to 800 °C. Previously presented
8. 40
  Dependent← claim 19
  Method according to claim 19, wherein the gas inlet provides a gas ﬂow perpendicular to the surface of the substrate. Previously presented
9. 41
  Dependent← claim 19graphene film
  Method according to claim 19, wherein heating the solid carbon source is conﬁgured to deﬁne a thermal gradient between the solid carbon source and the surface of the substrate so as to form homogeneous and continuous graphene ﬁlm. Previously presented
22
Independent
Canceled
24
Independent
24-26. Canceled
26
Independent
Canceled
32
Independent
32-33. Canceled
33
Independent
Canceled
36
Independent
36-38. Canceled
38
Independent
Canceled
42
Independent
Canceled
43
Independentgraphene filmsolid carbon source
Fabrication method of a graphene ﬁlm comprising substrate and a solid carbon source in a reaction solid carbon source, by ﬂow of a current in said being devoid of carbonaceous organic molecules, carbon source into the graphene ﬁlm on a surface between and spaced apart from the substrate and physical contact with the substrate and being made
44
Independentgraphene filmsolid carbon source
Canceled the following successive steps: placing a chamber, provided with a gas inlet, heating the solid carbon source, under a gas ﬂow, the gas so as to convert at least a part of the solid of the substrate, wherein a grid is arranged the solid carbon source, the grid being devoid of from nickel or quartz. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

silicon/chromium/platinum substrate stack

Ptmetallic thin layer

Cradhesion layer

Sibulk substrate

Materials

Materials described outside the worked examples.

graphene film

Deposited Film

solid carbon source

Carbon Source Precursor

Process steps

Additional fabrication and treatment steps described in the patent.

Hot Filament Cvd Growth

Step 1

Temperature

700, 800°C

Duration

5, 300 min

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	0.5–2.5 cm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Process for producing a graphene film | Matter42 Literature