Patent
US 8,554,022SILICON-GRAPHENE WAVEGUIDE PHOTODETECTORS, OPTICALLY ACTIVE ELEMENTS AND MICROELECTROMECHANICAL DEVICES
Michael J. Hochberg
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,554,022Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a diagram that shows a dispersion diagram of both a segmented waveguide and the normal, unsegmented waveguide, taken on a plane parallel to the …
FIG. 4. Slots were introduced into both the oval and external coupling waveguides. [0098] Predicting coupling strength and waveguide losses for such devices is …
FIG. 5 is a diagram showing the measured transmission spectrum in dB vs. laser wavelength in nm past a high quality factor slot ring resonator. [0029]
FIG. 6 is a diagram showing the detail of the peak of the transmission spectrum near 1488 nm. [0030]
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
FIG. 8 is a diagram of a slot ring resonator directional coupler region, and the associated input waveguide. [00105] Other variations on the geometry of …
FIG. 9 is a diagram showing an exemplary high-index segmented waveguide structures, which in the embodiment shown comprises a central waveguide portion with …
FIG. 10 C is a diagram that shows a plot of modal patterns over four periods of a segmented waveguide on a horizontal plane that intersects the silicon layer …
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 13 shows a diagram of a Mach-Zehnder modulator with a conventional electrode geometry in top-down view, including top contact, waveguide, and bottom …
FIG. 14 shows the static electric fields solved as part of analyzing waveguide design 1 with a gap of 40 nm, as described in Table 2. As one would expect, the …
FIG. 15C. In all cases the mode has been normalized to have 1 Watt of 35 ATTORNEY DOCKET No. 8553P. 1US propagating power.
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 18 is a diagram that shows a transmission spectrum of an electroded slot waveguide resonator with a gap of 70 nm. Fiber to fiber insertion loss is plotted …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 22B is a schematic diagram of a suspended graphene interface-junction 43 ATTORNEY DOCKET No. 8553P. 1US optoelectronic device. [00191]
FIG. 23 is a graph that illustrates that silicon photonic systems are doubling in complexity at a rate significantly exceeding Moore's Law. [00193]
FIG. 24A is a cross-sectional diagram showing how a graphene element can be combined with a ridge waveguide in an integrated circuit environment. [00194]
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
FIG. 37E). Further measurements on the power and temperature dependence of PC can be also well explained by the photo-thermoelectric model. We use these …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for modulating light with light, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam with a third frequency different from at least one of said first and second frequencies, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided as a first continuous-wave laser beam having a first frequency, and said second input light beam is provided as a second continuous-wave laser beam having a second frequency, said output light beam appearing at said output port includes a modulated signal at said third frequency having a modulation frequency equal to a difference between said first frequency of said first input light beam and said second frequency of said second input light beam.
The apparatus for modulating light with light of claim 1, wherein one of said first continuous-wave laser beam and said second input light beam is amplitude modulated.
The apparatus for modulating light with light of claim 1, wherein said first and second input light beams are provided at the same input port.
An apparatus for modulating light with light, comprising: 2 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided with an amplitude modulation at a predefined frequency, and said second input light beam comprises no amplitude modulation, an output light beam includes an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The apparatus for modulating light with light of claim 4, wherein said apparatus is an optical transistor.
The apparatus for modulating light with light of claim 4, wherein said substrate is a silicon wafer.
The apparatus for modulating light with light of claim 4, wherein said high index contrast waveguide is configured as a Mach-Zehnder interferometer having at least two arms.
The apparatus for modulating light with light of claim 4, further comprising an optical cavity that enhances an optical field strength of at least one optical beam.
The apparatus for modulating light with light of claim 4, wherein one of said first input light beam and said second input light beam comprises a combination of a first pump light beam having a first pump frequency and a second pump light beam having a second pump frequency, said combination of said first pump light beam and said second pump light beam providing a modulation source beam having a selected frequency corresponding to a difference between said first pump frequency and said second pump frequency.
An optical logic gate comprising at least one apparatus for modulating light with light of claim
The optical logic gate of claim 16, wherein said logic gate is configured as a NAND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as a XOR gate.
A latch comprising at least one optical logic gate of claim 16.
The optical logic gate of claim 16, wherein said logic gate is configured as an AND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as an OR gate.
An optical detector comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving an input light beam having a first frequency and an output port for providing an output signal; and a graphene cladding adjacent said high index contrast waveguide; said optical detector configured to provide a signal at said output port representative of said input light beam.
A nanoelectromechanical device, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving a non-volatile input electromagnetic signal and an output port for providing an output signal; and 5 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a graphene cladding proximate said high index contrast waveguide, said graphene cladding configured to perform a mechanical motion in response to said non- volatile input electromagnetic signal; said nanoelectromechanical device configured to provide a non-volatile output signal at said output port representative of said nonvolatile input electromagnetic signal.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam having a third frequency different from at least one of said first frequency and said second frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first continuous-wave laser beam having a first frequency; providing a second continuous-wave laser beam having a second frequency different from said first frequency, providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency; and observing an output light beam at said output port, said output light beam including a modulated signal at said third frequency having a modulation frequency equal to 6 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a difference between said first frequency of said first input laser beam and said second frequency of said second input laser beam.
The method of claim 24, wherein at least two of said first, said second and said third input light beams are provided at the same input port.
The method of optically processing light of claim 24, wherein at least one of the steps of providing a first input laser beam having a first frequency, providing a second input laser beam having a second frequency different from said first frequency and providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency involves providing an input laser beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first input light beam having a first frequency, and having an amplitude modulation at a predefined frequency; providing a second unmodulated input light beam having a second frequency different from said first frequency, and 7 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ observing an output light beam having an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The method of optically processing light of claim 27, wherein at least one of the steps of providing a first input light beam having a first frequency and providing a second input light beam having a second frequency different from said first frequency involves providing either input light beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for modulating light with light (three-input port)
apparatus for modulating light with light (two-input port, amplitude modulation transfer)
Materials described outside the worked examples.
graphene
C
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 18 °C to 37 k | — |
Temperature | 3–5 k |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,554,022Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a diagram that shows a dispersion diagram of both a segmented waveguide and the normal, unsegmented waveguide, taken on a plane parallel to the …
FIG. 4. Slots were introduced into both the oval and external coupling waveguides. [0098] Predicting coupling strength and waveguide losses for such devices is …
FIG. 5 is a diagram showing the measured transmission spectrum in dB vs. laser wavelength in nm past a high quality factor slot ring resonator. [0029]
FIG. 6 is a diagram showing the detail of the peak of the transmission spectrum near 1488 nm. [0030]
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
FIG. 8 is a diagram of a slot ring resonator directional coupler region, and the associated input waveguide. [00105] Other variations on the geometry of …
FIG. 9 is a diagram showing an exemplary high-index segmented waveguide structures, which in the embodiment shown comprises a central waveguide portion with …
FIG. 10 C is a diagram that shows a plot of modal patterns over four periods of a segmented waveguide on a horizontal plane that intersects the silicon layer …
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 13 shows a diagram of a Mach-Zehnder modulator with a conventional electrode geometry in top-down view, including top contact, waveguide, and bottom …
FIG. 14 shows the static electric fields solved as part of analyzing waveguide design 1 with a gap of 40 nm, as described in Table 2. As one would expect, the …
FIG. 15C. In all cases the mode has been normalized to have 1 Watt of 35 ATTORNEY DOCKET No. 8553P. 1US propagating power.
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 18 is a diagram that shows a transmission spectrum of an electroded slot waveguide resonator with a gap of 70 nm. Fiber to fiber insertion loss is plotted …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 22B is a schematic diagram of a suspended graphene interface-junction 43 ATTORNEY DOCKET No. 8553P. 1US optoelectronic device. [00191]
FIG. 23 is a graph that illustrates that silicon photonic systems are doubling in complexity at a rate significantly exceeding Moore's Law. [00193]
FIG. 24A is a cross-sectional diagram showing how a graphene element can be combined with a ridge waveguide in an integrated circuit environment. [00194]
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
FIG. 37E). Further measurements on the power and temperature dependence of PC can be also well explained by the photo-thermoelectric model. We use these …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for modulating light with light, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam with a third frequency different from at least one of said first and second frequencies, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided as a first continuous-wave laser beam having a first frequency, and said second input light beam is provided as a second continuous-wave laser beam having a second frequency, said output light beam appearing at said output port includes a modulated signal at said third frequency having a modulation frequency equal to a difference between said first frequency of said first input light beam and said second frequency of said second input light beam.
The apparatus for modulating light with light of claim 1, wherein one of said first continuous-wave laser beam and said second input light beam is amplitude modulated.
The apparatus for modulating light with light of claim 1, wherein said first and second input light beams are provided at the same input port.
An apparatus for modulating light with light, comprising: 2 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided with an amplitude modulation at a predefined frequency, and said second input light beam comprises no amplitude modulation, an output light beam includes an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The apparatus for modulating light with light of claim 4, wherein said apparatus is an optical transistor.
The apparatus for modulating light with light of claim 4, wherein said substrate is a silicon wafer.
The apparatus for modulating light with light of claim 4, wherein said high index contrast waveguide is configured as a Mach-Zehnder interferometer having at least two arms.
The apparatus for modulating light with light of claim 4, further comprising an optical cavity that enhances an optical field strength of at least one optical beam.
The apparatus for modulating light with light of claim 4, wherein one of said first input light beam and said second input light beam comprises a combination of a first pump light beam having a first pump frequency and a second pump light beam having a second pump frequency, said combination of said first pump light beam and said second pump light beam providing a modulation source beam having a selected frequency corresponding to a difference between said first pump frequency and said second pump frequency.
An optical logic gate comprising at least one apparatus for modulating light with light of claim
The optical logic gate of claim 16, wherein said logic gate is configured as a NAND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as a XOR gate.
A latch comprising at least one optical logic gate of claim 16.
The optical logic gate of claim 16, wherein said logic gate is configured as an AND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as an OR gate.
An optical detector comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving an input light beam having a first frequency and an output port for providing an output signal; and a graphene cladding adjacent said high index contrast waveguide; said optical detector configured to provide a signal at said output port representative of said input light beam.
A nanoelectromechanical device, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving a non-volatile input electromagnetic signal and an output port for providing an output signal; and 5 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a graphene cladding proximate said high index contrast waveguide, said graphene cladding configured to perform a mechanical motion in response to said non- volatile input electromagnetic signal; said nanoelectromechanical device configured to provide a non-volatile output signal at said output port representative of said nonvolatile input electromagnetic signal.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam having a third frequency different from at least one of said first frequency and said second frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first continuous-wave laser beam having a first frequency; providing a second continuous-wave laser beam having a second frequency different from said first frequency, providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency; and observing an output light beam at said output port, said output light beam including a modulated signal at said third frequency having a modulation frequency equal to 6 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a difference between said first frequency of said first input laser beam and said second frequency of said second input laser beam.
The method of claim 24, wherein at least two of said first, said second and said third input light beams are provided at the same input port.
The method of optically processing light of claim 24, wherein at least one of the steps of providing a first input laser beam having a first frequency, providing a second input laser beam having a second frequency different from said first frequency and providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency involves providing an input laser beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first input light beam having a first frequency, and having an amplitude modulation at a predefined frequency; providing a second unmodulated input light beam having a second frequency different from said first frequency, and 7 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ observing an output light beam having an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The method of optically processing light of claim 27, wherein at least one of the steps of providing a first input light beam having a first frequency and providing a second input light beam having a second frequency different from said first frequency involves providing either input light beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for modulating light with light (three-input port)
apparatus for modulating light with light (two-input port, amplitude modulation transfer)
Materials described outside the worked examples.
graphene
C
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 18 °C to 37 k | — |
Temperature | 3–5 k |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,554,022Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a diagram that shows a dispersion diagram of both a segmented waveguide and the normal, unsegmented waveguide, taken on a plane parallel to the …
FIG. 4. Slots were introduced into both the oval and external coupling waveguides. [0098] Predicting coupling strength and waveguide losses for such devices is …
FIG. 5 is a diagram showing the measured transmission spectrum in dB vs. laser wavelength in nm past a high quality factor slot ring resonator. [0029]
FIG. 6 is a diagram showing the detail of the peak of the transmission spectrum near 1488 nm. [0030]
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
FIG. 8 is a diagram of a slot ring resonator directional coupler region, and the associated input waveguide. [00105] Other variations on the geometry of …
FIG. 9 is a diagram showing an exemplary high-index segmented waveguide structures, which in the embodiment shown comprises a central waveguide portion with …
FIG. 10 C is a diagram that shows a plot of modal patterns over four periods of a segmented waveguide on a horizontal plane that intersects the silicon layer …
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 13 shows a diagram of a Mach-Zehnder modulator with a conventional electrode geometry in top-down view, including top contact, waveguide, and bottom …
FIG. 14 shows the static electric fields solved as part of analyzing waveguide design 1 with a gap of 40 nm, as described in Table 2. As one would expect, the …
FIG. 15C. In all cases the mode has been normalized to have 1 Watt of 35 ATTORNEY DOCKET No. 8553P. 1US propagating power.
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 18 is a diagram that shows a transmission spectrum of an electroded slot waveguide resonator with a gap of 70 nm. Fiber to fiber insertion loss is plotted …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 22B is a schematic diagram of a suspended graphene interface-junction 43 ATTORNEY DOCKET No. 8553P. 1US optoelectronic device. [00191]
FIG. 23 is a graph that illustrates that silicon photonic systems are doubling in complexity at a rate significantly exceeding Moore's Law. [00193]
FIG. 24A is a cross-sectional diagram showing how a graphene element can be combined with a ridge waveguide in an integrated circuit environment. [00194]
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
FIG. 37E). Further measurements on the power and temperature dependence of PC can be also well explained by the photo-thermoelectric model. We use these …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for modulating light with light, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam with a third frequency different from at least one of said first and second frequencies, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided as a first continuous-wave laser beam having a first frequency, and said second input light beam is provided as a second continuous-wave laser beam having a second frequency, said output light beam appearing at said output port includes a modulated signal at said third frequency having a modulation frequency equal to a difference between said first frequency of said first input light beam and said second frequency of said second input light beam.
The apparatus for modulating light with light of claim 1, wherein one of said first continuous-wave laser beam and said second input light beam is amplitude modulated.
The apparatus for modulating light with light of claim 1, wherein said first and second input light beams are provided at the same input port.
An apparatus for modulating light with light, comprising: 2 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided with an amplitude modulation at a predefined frequency, and said second input light beam comprises no amplitude modulation, an output light beam includes an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The apparatus for modulating light with light of claim 4, wherein said apparatus is an optical transistor.
The apparatus for modulating light with light of claim 4, wherein said substrate is a silicon wafer.
The apparatus for modulating light with light of claim 4, wherein said high index contrast waveguide is configured as a Mach-Zehnder interferometer having at least two arms.
The apparatus for modulating light with light of claim 4, further comprising an optical cavity that enhances an optical field strength of at least one optical beam.
The apparatus for modulating light with light of claim 4, wherein one of said first input light beam and said second input light beam comprises a combination of a first pump light beam having a first pump frequency and a second pump light beam having a second pump frequency, said combination of said first pump light beam and said second pump light beam providing a modulation source beam having a selected frequency corresponding to a difference between said first pump frequency and said second pump frequency.
An optical logic gate comprising at least one apparatus for modulating light with light of claim
The optical logic gate of claim 16, wherein said logic gate is configured as a NAND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as a XOR gate.
A latch comprising at least one optical logic gate of claim 16.
The optical logic gate of claim 16, wherein said logic gate is configured as an AND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as an OR gate.
An optical detector comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving an input light beam having a first frequency and an output port for providing an output signal; and a graphene cladding adjacent said high index contrast waveguide; said optical detector configured to provide a signal at said output port representative of said input light beam.
A nanoelectromechanical device, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving a non-volatile input electromagnetic signal and an output port for providing an output signal; and 5 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a graphene cladding proximate said high index contrast waveguide, said graphene cladding configured to perform a mechanical motion in response to said non- volatile input electromagnetic signal; said nanoelectromechanical device configured to provide a non-volatile output signal at said output port representative of said nonvolatile input electromagnetic signal.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam having a third frequency different from at least one of said first frequency and said second frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first continuous-wave laser beam having a first frequency; providing a second continuous-wave laser beam having a second frequency different from said first frequency, providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency; and observing an output light beam at said output port, said output light beam including a modulated signal at said third frequency having a modulation frequency equal to 6 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a difference between said first frequency of said first input laser beam and said second frequency of said second input laser beam.
The method of claim 24, wherein at least two of said first, said second and said third input light beams are provided at the same input port.
The method of optically processing light of claim 24, wherein at least one of the steps of providing a first input laser beam having a first frequency, providing a second input laser beam having a second frequency different from said first frequency and providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency involves providing an input laser beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first input light beam having a first frequency, and having an amplitude modulation at a predefined frequency; providing a second unmodulated input light beam having a second frequency different from said first frequency, and 7 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ observing an output light beam having an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The method of optically processing light of claim 27, wherein at least one of the steps of providing a first input light beam having a first frequency and providing a second input light beam having a second frequency different from said first frequency involves providing either input light beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for modulating light with light (three-input port)
apparatus for modulating light with light (two-input port, amplitude modulation transfer)
Materials described outside the worked examples.
graphene
C
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 18 °C to 37 k | — |
Temperature | 3–5 k |
Related documents with shared materials, methods, properties, or citations.
Patent
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US 8,554,022Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a diagram that shows a dispersion diagram of both a segmented waveguide and the normal, unsegmented waveguide, taken on a plane parallel to the …
FIG. 4. Slots were introduced into both the oval and external coupling waveguides. [0098] Predicting coupling strength and waveguide losses for such devices is …
FIG. 5 is a diagram showing the measured transmission spectrum in dB vs. laser wavelength in nm past a high quality factor slot ring resonator. [0029]
FIG. 6 is a diagram showing the detail of the peak of the transmission spectrum near 1488 nm. [0030]
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
FIG. 8 is a diagram of a slot ring resonator directional coupler region, and the associated input waveguide. [00105] Other variations on the geometry of …
FIG. 9 is a diagram showing an exemplary high-index segmented waveguide structures, which in the embodiment shown comprises a central waveguide portion with …
FIG. 10 C is a diagram that shows a plot of modal patterns over four periods of a segmented waveguide on a horizontal plane that intersects the silicon layer …
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 13 shows a diagram of a Mach-Zehnder modulator with a conventional electrode geometry in top-down view, including top contact, waveguide, and bottom …
FIG. 14 shows the static electric fields solved as part of analyzing waveguide design 1 with a gap of 40 nm, as described in Table 2. As one would expect, the …
FIG. 15C. In all cases the mode has been normalized to have 1 Watt of 35 ATTORNEY DOCKET No. 8553P. 1US propagating power.
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 18 is a diagram that shows a transmission spectrum of an electroded slot waveguide resonator with a gap of 70 nm. Fiber to fiber insertion loss is plotted …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 22B is a schematic diagram of a suspended graphene interface-junction 43 ATTORNEY DOCKET No. 8553P. 1US optoelectronic device. [00191]
FIG. 23 is a graph that illustrates that silicon photonic systems are doubling in complexity at a rate significantly exceeding Moore's Law. [00193]
FIG. 24A is a cross-sectional diagram showing how a graphene element can be combined with a ridge waveguide in an integrated circuit environment. [00194]
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
FIG. 37E). Further measurements on the power and temperature dependence of PC can be also well explained by the photo-thermoelectric model. We use these …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for modulating light with light, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam with a third frequency different from at least one of said first and second frequencies, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided as a first continuous-wave laser beam having a first frequency, and said second input light beam is provided as a second continuous-wave laser beam having a second frequency, said output light beam appearing at said output port includes a modulated signal at said third frequency having a modulation frequency equal to a difference between said first frequency of said first input light beam and said second frequency of said second input light beam.
The apparatus for modulating light with light of claim 1, wherein one of said first continuous-wave laser beam and said second input light beam is amplitude modulated.
The apparatus for modulating light with light of claim 1, wherein said first and second input light beams are provided at the same input port.
An apparatus for modulating light with light, comprising: 2 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene adjacent said high index contrast waveguide; said high index contrast waveguide and said graphene cladding configured so that, when said first input light beam is provided with an amplitude modulation at a predefined frequency, and said second input light beam comprises no amplitude modulation, an output light beam includes an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The apparatus for modulating light with light of claim 4, wherein said apparatus is an optical transistor.
The apparatus for modulating light with light of claim 4, wherein said substrate is a silicon wafer.
The apparatus for modulating light with light of claim 4, wherein said high index contrast waveguide is configured as a Mach-Zehnder interferometer having at least two arms.
The apparatus for modulating light with light of claim 4, further comprising an optical cavity that enhances an optical field strength of at least one optical beam.
The apparatus for modulating light with light of claim 4, wherein one of said first input light beam and said second input light beam comprises a combination of a first pump light beam having a first pump frequency and a second pump light beam having a second pump frequency, said combination of said first pump light beam and said second pump light beam providing a modulation source beam having a selected frequency corresponding to a difference between said first pump frequency and said second pump frequency.
An optical logic gate comprising at least one apparatus for modulating light with light of claim
The optical logic gate of claim 16, wherein said logic gate is configured as a NAND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as a XOR gate.
A latch comprising at least one optical logic gate of claim 16.
The optical logic gate of claim 16, wherein said logic gate is configured as an AND gate.
The optical logic gate of claim 16, wherein said logic gate is configured as an OR gate.
An optical detector comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving an input light beam having a first frequency and an output port for providing an output signal; and a graphene cladding adjacent said high index contrast waveguide; said optical detector configured to provide a signal at said output port representative of said input light beam.
A nanoelectromechanical device, comprising: a substrate having an insulating surface; a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having an input port for receiving a non-volatile input electromagnetic signal and an output port for providing an output signal; and 5 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a graphene cladding proximate said high index contrast waveguide, said graphene cladding configured to perform a mechanical motion in response to said non- volatile input electromagnetic signal; said nanoelectromechanical device configured to provide a non-volatile output signal at said output port representative of said nonvolatile input electromagnetic signal.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, a third input port for receiving a third input light beam having a third frequency different from at least one of said first frequency and said second frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first continuous-wave laser beam having a first frequency; providing a second continuous-wave laser beam having a second frequency different from said first frequency, providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency; and observing an output light beam at said output port, said output light beam including a modulated signal at said third frequency having a modulation frequency equal to 6 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ a difference between said first frequency of said first input laser beam and said second frequency of said second input laser beam.
The method of claim 24, wherein at least two of said first, said second and said third input light beams are provided at the same input port.
The method of optically processing light of claim 24, wherein at least one of the steps of providing a first input laser beam having a first frequency, providing a second input laser beam having a second frequency different from said first frequency and providing a third continuous-wave laser beam having a third frequency different from at least one of said first frequency and said second frequency involves providing an input laser beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
A method of optically processing light, comprising the steps of: providing a structure comprising: a substrate having an insulating surface, a high index contrast waveguide adjacent said insulating surface, said high index contrast waveguide having a first input port for receiving a first input light beam having a first frequency, a second input port for receiving a second input light beam having a second frequency different from said first frequency, and an output port for providing an output light beam; and a graphene cladding adjacent said high index contrast waveguide; providing a first input light beam having a first frequency, and having an amplitude modulation at a predefined frequency; providing a second unmodulated input light beam having a second frequency different from said first frequency, and 7 Amendment and Response U.S. Serial No. 12/974,932 Filed: Attorney Docket No: 45119.02U S₂ observing an output light beam having an amplitude modulation at said predefined frequency on said second light beam at said second frequency.
The method of optically processing light of claim 27, wherein at least one of the steps of providing a first input light beam having a first frequency and providing a second input light beam having a second frequency different from said first frequency involves providing either input light beam using an input waveguide that communicates with said high index contrast waveguide with a coupler.
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for modulating light with light (three-input port)
apparatus for modulating light with light (two-input port, amplitude modulation transfer)
Materials described outside the worked examples.
graphene
C
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a diagram showing a shallow angle SEM view of a silicon-on-insulator ring resonator and waveguide having a sidewall roughness on the order of 10 nm. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 18 °C to 37 k | — |
Temperature | 3–5 k |
Related documents with shared materials, methods, properties, or citations.
Mach-Zehnder interferometer waveguide with graphene cladding
optical logic gate
No layer stack recorded.
optical detector
nanoelectromechanical device
silicon oxide insulating layer
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
| — |
Thickness | 1480–1600 nm | — |
Temperature | 18–65 °C | — |
Voltage | 1–9 V | — |
Thickness | 1–5 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
Mach-Zehnder interferometer waveguide with graphene cladding
optical logic gate
No layer stack recorded.
optical detector
nanoelectromechanical device
silicon oxide insulating layer
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
| — |
Thickness | 1480–1600 nm | — |
Temperature | 18–65 °C | — |
Voltage | 1–9 V | — |
Thickness | 1–5 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
Mach-Zehnder interferometer waveguide with graphene cladding
optical logic gate
No layer stack recorded.
optical detector
nanoelectromechanical device
silicon oxide insulating layer
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
| — |
Thickness | 1480–1600 nm | — |
Temperature | 18–65 °C | — |
Voltage | 1–9 V | — |
Thickness | 1–5 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |
Mach-Zehnder interferometer waveguide with graphene cladding
optical logic gate
No layer stack recorded.
optical detector
nanoelectromechanical device
silicon oxide insulating layer
FIG. 11 is a diagram that shows an exemplary electrical isolator that was constructed and tested, and which provided both a transition from a standard to a …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 12A, the optical mode was solved using a finite- difference based Hermetian Eigensolver, such as that described by A. Taflove, Computational Electrodynamics, …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 16B is an SEM micrograph of a slot waveguide. In this case, the slot waveguide is being coupled to with a ridge waveguide; this mode converter involves …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 17C are two SEM micrographs of modulators constructed according to principles of the invention, that show the slotted, segmented region, as well as the …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 19A. As used herein, the term "graphene" is intended to include single atomic layer graphene, dual atomic layer graphene, multiple atomic layer graphene, …
FIG. 20 is a graph showing a two-pulse pump-probe measurement of photocurrent dynamics of a graphene photodetector. [00185]
FIG. 21 is a scanning electron microscope (SEM) image of first generation hybrid graphene-silicon slot waveguide devices. The silicon waveguides are indicated …
FIG. 25C) with such techniques. Optical fields are highly concentrated in the slot, and interact strongly with any material therein. [00199] Fortunately, the …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 26C is an example SEM image of suspended graphene membrane devices. The ability of mass-production of devices enables the investigation of unprecedented …
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 27A. A pronounced PC arises at the graphene interface junction. [0068]
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 28A is a schematic diagram illustrating device structure. Gold electrodes with sub 10 nm separation form an optical dipole antenna. A graphene nanoribbon …
FIG. 29B is an image of another embodiment of an electroded slot waveguide EO modulator, ready for graphene coating and electrical testing. DETAILED …
| — |
Thickness | 1480–1600 nm | — |
Temperature | 18–65 °C | — |
Voltage | 1–9 V | — |
Thickness | 1–5 nm | — |
Voltage | ≤ 1 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 20 nm | — |