Patent
US 9,627,562METHOD OF MANUFACTURING A MONOLAYER GRAPHENE PHOTODETECTOR AND MONOLAYER GRAPHENE PHOTODETECTOR
Yongzhe ZHANG
NANYANG TECHNOLOGICAL UNIVERSITY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,627,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 2 B, the substrate is provided with electrodes. Two electrode terminals, the source terminal 210 and the drain terminal 212 are formed by photolithography …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
FIG. 10 illustrates a block schematic of a method of manufacturing a monolayer graphene photodetector according to an embodiment of the present disclosure. …
FIG. 11 illustrates a block schematic of a monolayer graphene photodetector according to an embodiment of the present disclosure. According to an embodiment, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a monolayer graphene photodetector comprising: forming a graphene quantum dot array in a graphene monolayer; and forming an electron trapping center in the graphene quantum dot array, wherein: said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The method of claim 1, wherein the graphene monolayer is a pure graphene monolayer.
The method of claim 1, further comprising creating a bandgap in the graphene monolayer.
The method of claim 1, further comprising forming the electron trapping center by creating a defect on a surface of the graphene quantum dot array.
The method of claim 1, wherein forming the graphene quantum dot array and forming the electron trapping center in the graphene quantum dot array comprises depositing a sacrificial layer on the graphene monolayer, and removing the sacrificial layer therefrom.
The method of claim 1, further comprising improving carrier mobility of the graphene quantum dot array with any one of electron beam lithography, helium ion lithography, scanning tunneling microscope lithography, or a focused ions beam.
The method of claim 1, further comprising utilizing multi-excitation generation to facilitate electron capture.
The method of claim 1, further comprising fabricating the graphene quantum dot array using micromechanical exfoliation.
The method of claim 1, further comprising fabricating the graphene monolayer on a silicon-based substrate, wherein the silicon is highly p- doped.
The method of claim 1, further comprising carrying out a switching operation between electron and hole-dominated photoconductivity.
The method of claim 1, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
A monolayer graphene photodetector comprising: a graphene quantum dot array formed on a graphene monolayer; and an electron trapping center formed in the graphene quantum dot array, wherein said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and 4 Application No. 14/766,064 Reply to Office Action dated the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The monolayer graphene photodetector of claim 20, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
Layer stacks claimed or described, ordered top of device to substrate.
monolayer graphene photodetector
Materials described outside the worked examples.
graphene monolayer
graphene quantum dot array
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoresponsivity at mid-infrared wavelength 9.9 µm | 0.4 A/W | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,627,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 2 B, the substrate is provided with electrodes. Two electrode terminals, the source terminal 210 and the drain terminal 212 are formed by photolithography …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
FIG. 10 illustrates a block schematic of a method of manufacturing a monolayer graphene photodetector according to an embodiment of the present disclosure. …
FIG. 11 illustrates a block schematic of a monolayer graphene photodetector according to an embodiment of the present disclosure. According to an embodiment, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a monolayer graphene photodetector comprising: forming a graphene quantum dot array in a graphene monolayer; and forming an electron trapping center in the graphene quantum dot array, wherein: said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The method of claim 1, wherein the graphene monolayer is a pure graphene monolayer.
The method of claim 1, further comprising creating a bandgap in the graphene monolayer.
The method of claim 1, further comprising forming the electron trapping center by creating a defect on a surface of the graphene quantum dot array.
The method of claim 1, wherein forming the graphene quantum dot array and forming the electron trapping center in the graphene quantum dot array comprises depositing a sacrificial layer on the graphene monolayer, and removing the sacrificial layer therefrom.
The method of claim 1, further comprising improving carrier mobility of the graphene quantum dot array with any one of electron beam lithography, helium ion lithography, scanning tunneling microscope lithography, or a focused ions beam.
The method of claim 1, further comprising utilizing multi-excitation generation to facilitate electron capture.
The method of claim 1, further comprising fabricating the graphene quantum dot array using micromechanical exfoliation.
The method of claim 1, further comprising fabricating the graphene monolayer on a silicon-based substrate, wherein the silicon is highly p- doped.
The method of claim 1, further comprising carrying out a switching operation between electron and hole-dominated photoconductivity.
The method of claim 1, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
A monolayer graphene photodetector comprising: a graphene quantum dot array formed on a graphene monolayer; and an electron trapping center formed in the graphene quantum dot array, wherein said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and 4 Application No. 14/766,064 Reply to Office Action dated the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The monolayer graphene photodetector of claim 20, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
Layer stacks claimed or described, ordered top of device to substrate.
monolayer graphene photodetector
Materials described outside the worked examples.
graphene monolayer
graphene quantum dot array
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoresponsivity at mid-infrared wavelength 9.9 µm | 0.4 A/W | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,627,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 2 B, the substrate is provided with electrodes. Two electrode terminals, the source terminal 210 and the drain terminal 212 are formed by photolithography …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
FIG. 10 illustrates a block schematic of a method of manufacturing a monolayer graphene photodetector according to an embodiment of the present disclosure. …
FIG. 11 illustrates a block schematic of a monolayer graphene photodetector according to an embodiment of the present disclosure. According to an embodiment, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a monolayer graphene photodetector comprising: forming a graphene quantum dot array in a graphene monolayer; and forming an electron trapping center in the graphene quantum dot array, wherein: said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The method of claim 1, wherein the graphene monolayer is a pure graphene monolayer.
The method of claim 1, further comprising creating a bandgap in the graphene monolayer.
The method of claim 1, further comprising forming the electron trapping center by creating a defect on a surface of the graphene quantum dot array.
The method of claim 1, wherein forming the graphene quantum dot array and forming the electron trapping center in the graphene quantum dot array comprises depositing a sacrificial layer on the graphene monolayer, and removing the sacrificial layer therefrom.
The method of claim 1, further comprising improving carrier mobility of the graphene quantum dot array with any one of electron beam lithography, helium ion lithography, scanning tunneling microscope lithography, or a focused ions beam.
The method of claim 1, further comprising utilizing multi-excitation generation to facilitate electron capture.
The method of claim 1, further comprising fabricating the graphene quantum dot array using micromechanical exfoliation.
The method of claim 1, further comprising fabricating the graphene monolayer on a silicon-based substrate, wherein the silicon is highly p- doped.
The method of claim 1, further comprising carrying out a switching operation between electron and hole-dominated photoconductivity.
The method of claim 1, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
A monolayer graphene photodetector comprising: a graphene quantum dot array formed on a graphene monolayer; and an electron trapping center formed in the graphene quantum dot array, wherein said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and 4 Application No. 14/766,064 Reply to Office Action dated the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The monolayer graphene photodetector of claim 20, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
Layer stacks claimed or described, ordered top of device to substrate.
monolayer graphene photodetector
Materials described outside the worked examples.
graphene monolayer
graphene quantum dot array
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoresponsivity at mid-infrared wavelength 9.9 µm | 0.4 A/W | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,627,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 2 B, the substrate is provided with electrodes. Two electrode terminals, the source terminal 210 and the drain terminal 212 are formed by photolithography …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
FIG. 10 illustrates a block schematic of a method of manufacturing a monolayer graphene photodetector according to an embodiment of the present disclosure. …
FIG. 11 illustrates a block schematic of a monolayer graphene photodetector according to an embodiment of the present disclosure. According to an embodiment, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a monolayer graphene photodetector comprising: forming a graphene quantum dot array in a graphene monolayer; and forming an electron trapping center in the graphene quantum dot array, wherein: said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The method of claim 1, wherein the graphene monolayer is a pure graphene monolayer.
The method of claim 1, further comprising creating a bandgap in the graphene monolayer.
The method of claim 1, further comprising forming the electron trapping center by creating a defect on a surface of the graphene quantum dot array.
The method of claim 1, wherein forming the graphene quantum dot array and forming the electron trapping center in the graphene quantum dot array comprises depositing a sacrificial layer on the graphene monolayer, and removing the sacrificial layer therefrom.
The method of claim 1, further comprising improving carrier mobility of the graphene quantum dot array with any one of electron beam lithography, helium ion lithography, scanning tunneling microscope lithography, or a focused ions beam.
The method of claim 1, further comprising utilizing multi-excitation generation to facilitate electron capture.
The method of claim 1, further comprising fabricating the graphene quantum dot array using micromechanical exfoliation.
The method of claim 1, further comprising fabricating the graphene monolayer on a silicon-based substrate, wherein the silicon is highly p- doped.
The method of claim 1, further comprising carrying out a switching operation between electron and hole-dominated photoconductivity.
The method of claim 1, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
A monolayer graphene photodetector comprising: a graphene quantum dot array formed on a graphene monolayer; and an electron trapping center formed in the graphene quantum dot array, wherein said photodetector has a photoresponse wavelength range from visible to mid-infrared; the electron trapping center is in a mid-gap band; and 4 Application No. 14/766,064 Reply to Office Action dated the photodetector has a photoresponse wavelength range in the entire range from visible to mid-infrared.
The monolayer graphene photodetector of claim 20, wherein said photodetector has a photoresponsivity of 0.4A/W at a mid-infrared wavelength of 9.9 pm.
Layer stacks claimed or described, ordered top of device to substrate.
monolayer graphene photodetector
Materials described outside the worked examples.
graphene monolayer
graphene quantum dot array
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoresponsivity at mid-infrared wavelength 9.9 µm | 0.4 A/W | — |
Related documents with shared materials, methods, properties, or citations.
titanium sacrificial layer
Ti
hydrofluoride
HF
hydrogen peroxide
H₂O₂
deionized water
H₂O
highly p-doped silicon substrate
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
titanium sacrificial layer
Ti
hydrofluoride
HF
hydrogen peroxide
H₂O₂
deionized water
H₂O
highly p-doped silicon substrate
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
titanium sacrificial layer
Ti
hydrofluoride
HF
hydrogen peroxide
H₂O₂
deionized water
H₂O
highly p-doped silicon substrate
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …
titanium sacrificial layer
Ti
hydrofluoride
HF
hydrogen peroxide
H₂O₂
deionized water
H₂O
highly p-doped silicon substrate
FIG. 1 A shows a bandstructure diagram 110 of a pure graphene monolayer sheet. Under typical conditions, interband transition 114 accounts for the movement of …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 3A. In embodiments, a graphene monolayer 302 is shown to be provided over a silicon substrate. According to various embodiments, the graphene monolayer …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 4D. A diamond-shaped low-current region can 18 WO 2014/149004 PCT/SG₂₀₁₄/000138 be observed at 446, which can suggest that a Coulomb blockade effect of …
FIG. 5 C shows a time dependent photocurrent measurement of a graphene photodetector according to an embodiment, with respect to a near-infrared light source. …
FIG. 6A illustrates the bias dependence of the photoresponse of a graphene photodetector according to an embodiment. Graph 610 shows the I -V curve of the …
FIG. 7A illustrates a photoresponse characteristic showing gate voltage dependence of a graphene photodetector according to various embodiments. Graph 710 …
FIG. 8B illustrates a transfer curve of a graphene photodetector according to various embodiments. Graph 820 shows a transfer curve 822 of a graphene …
FIG. 9B provides a graph showing a curve-fit with respect to experimentally obtained photocurrent data in varying operating temperatures. [0025] F I G. 10 …