Patent
US 10,151,027PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION METHODS FOR GRAPHENE DEPOSITION
Sunny Chugh
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,151,027Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b, due to low coverage in the 10-minute sample, the corresponding Raman spectrum is rather noisy. The D-to -G intensity ratio of the Raman peaks of the …
FIG. 2c is a graph of a device constructed by deposited graphene according to the present disclosure depicting source/drain current as a function of the Si …
FIG. 3a is a Raman spectroscopy output of intensity vs. Raman shift measured in cm- 1 for different growth periods of graphene on quartz for 1 m in, 5 m in, 10 …
FIG. 4b are graphs of measured transmittance (associated with left axis) of graphene grown on a quartz substrate and extracted absorbance of graphene …
FIG. 5 c is an XRD output comparing intensity vs. angle measured in degrees for Cu on Si and Si. 66989-03
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene deposition process, comprising: placing a substrate suitable to be heated only up to about 200 ° C into a deposition chamber; heating the chamber up to about 200 ° C; and generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate s wherein the precursor gas is flown through the plasma and over the substrate for a predetermined period of time, ranging between about 1 to about 30 minutes, wherein the precursor gas is flown over the substrate at a partial pressure of about 1 mTorr, wherein the precursor gas is flown over the substrate at a flow rate of about 6 s ec m, and wherein the precursor gas is selected from the group consisting of CH 4, C 2 H 2, C 2 H 4, and C 2 H. Currently amended
The process of claim 1, the substrate is a metal selected from the group consisting of Copper, Aluminum, Nickel, Titanium, Titanium Nitride, Cobalt, Ruthenium, Platinum, Iridium, and Silver. Withdrawn
The process of claim 1, the substrate is an insulator selected from the group consisting of SiO 2, Sapphire, MgO, and Quartz. Original
The process of claim 1, the substrate is a semiconductor selected from the group consisting of Silicon, Silicon Carbide, and GaAs. Withdrawn
The process of claim 1, prior to placing the substrate into the deposition chamber, comprising: washing the substrate with i) solvents; or ii) an etching solution. Original
The process of claim 1, the radio frequency plasma is generated at about 13.56 MHz. Original
The process of claim 1, the plasma is generated upstream from the substrate. Original
The process of claim 1, the plasma is generated adjacent to the substrate. Original
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
The process of claim 17, the predetermined period of time is between about 1 to about 15 minutes, when the substrate is copper. Withdrawn
The process of claim 47 1, the predetermined period of time is between about 5 to about 15 minutes, when the substrate is Quartz. Currently amended
The process of claim 44 1, the predetermined period of time is between about 10 to about 15 minutes, when the substrate is SiO 2. Currently amended
Materials described outside the worked examples.
graphene
C
methane
CH₄
acetylene
C₂H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1000 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,151,027Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b, due to low coverage in the 10-minute sample, the corresponding Raman spectrum is rather noisy. The D-to -G intensity ratio of the Raman peaks of the …
FIG. 2c is a graph of a device constructed by deposited graphene according to the present disclosure depicting source/drain current as a function of the Si …
FIG. 3a is a Raman spectroscopy output of intensity vs. Raman shift measured in cm- 1 for different growth periods of graphene on quartz for 1 m in, 5 m in, 10 …
FIG. 4b are graphs of measured transmittance (associated with left axis) of graphene grown on a quartz substrate and extracted absorbance of graphene …
FIG. 5 c is an XRD output comparing intensity vs. angle measured in degrees for Cu on Si and Si. 66989-03
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene deposition process, comprising: placing a substrate suitable to be heated only up to about 200 ° C into a deposition chamber; heating the chamber up to about 200 ° C; and generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate s wherein the precursor gas is flown through the plasma and over the substrate for a predetermined period of time, ranging between about 1 to about 30 minutes, wherein the precursor gas is flown over the substrate at a partial pressure of about 1 mTorr, wherein the precursor gas is flown over the substrate at a flow rate of about 6 s ec m, and wherein the precursor gas is selected from the group consisting of CH 4, C 2 H 2, C 2 H 4, and C 2 H. Currently amended
The process of claim 1, the substrate is a metal selected from the group consisting of Copper, Aluminum, Nickel, Titanium, Titanium Nitride, Cobalt, Ruthenium, Platinum, Iridium, and Silver. Withdrawn
The process of claim 1, the substrate is an insulator selected from the group consisting of SiO 2, Sapphire, MgO, and Quartz. Original
The process of claim 1, the substrate is a semiconductor selected from the group consisting of Silicon, Silicon Carbide, and GaAs. Withdrawn
The process of claim 1, prior to placing the substrate into the deposition chamber, comprising: washing the substrate with i) solvents; or ii) an etching solution. Original
The process of claim 1, the radio frequency plasma is generated at about 13.56 MHz. Original
The process of claim 1, the plasma is generated upstream from the substrate. Original
The process of claim 1, the plasma is generated adjacent to the substrate. Original
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
The process of claim 17, the predetermined period of time is between about 1 to about 15 minutes, when the substrate is copper. Withdrawn
The process of claim 47 1, the predetermined period of time is between about 5 to about 15 minutes, when the substrate is Quartz. Currently amended
The process of claim 44 1, the predetermined period of time is between about 10 to about 15 minutes, when the substrate is SiO 2. Currently amended
Materials described outside the worked examples.
graphene
C
methane
CH₄
acetylene
C₂H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1000 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,151,027Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b, due to low coverage in the 10-minute sample, the corresponding Raman spectrum is rather noisy. The D-to -G intensity ratio of the Raman peaks of the …
FIG. 2c is a graph of a device constructed by deposited graphene according to the present disclosure depicting source/drain current as a function of the Si …
FIG. 3a is a Raman spectroscopy output of intensity vs. Raman shift measured in cm- 1 for different growth periods of graphene on quartz for 1 m in, 5 m in, 10 …
FIG. 4b are graphs of measured transmittance (associated with left axis) of graphene grown on a quartz substrate and extracted absorbance of graphene …
FIG. 5 c is an XRD output comparing intensity vs. angle measured in degrees for Cu on Si and Si. 66989-03
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene deposition process, comprising: placing a substrate suitable to be heated only up to about 200 ° C into a deposition chamber; heating the chamber up to about 200 ° C; and generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate s wherein the precursor gas is flown through the plasma and over the substrate for a predetermined period of time, ranging between about 1 to about 30 minutes, wherein the precursor gas is flown over the substrate at a partial pressure of about 1 mTorr, wherein the precursor gas is flown over the substrate at a flow rate of about 6 s ec m, and wherein the precursor gas is selected from the group consisting of CH 4, C 2 H 2, C 2 H 4, and C 2 H. Currently amended
The process of claim 1, the substrate is a metal selected from the group consisting of Copper, Aluminum, Nickel, Titanium, Titanium Nitride, Cobalt, Ruthenium, Platinum, Iridium, and Silver. Withdrawn
The process of claim 1, the substrate is an insulator selected from the group consisting of SiO 2, Sapphire, MgO, and Quartz. Original
The process of claim 1, the substrate is a semiconductor selected from the group consisting of Silicon, Silicon Carbide, and GaAs. Withdrawn
The process of claim 1, prior to placing the substrate into the deposition chamber, comprising: washing the substrate with i) solvents; or ii) an etching solution. Original
The process of claim 1, the radio frequency plasma is generated at about 13.56 MHz. Original
The process of claim 1, the plasma is generated upstream from the substrate. Original
The process of claim 1, the plasma is generated adjacent to the substrate. Original
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
The process of claim 17, the predetermined period of time is between about 1 to about 15 minutes, when the substrate is copper. Withdrawn
The process of claim 47 1, the predetermined period of time is between about 5 to about 15 minutes, when the substrate is Quartz. Currently amended
The process of claim 44 1, the predetermined period of time is between about 10 to about 15 minutes, when the substrate is SiO 2. Currently amended
Materials described outside the worked examples.
graphene
C
methane
CH₄
acetylene
C₂H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1000 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,151,027Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b, due to low coverage in the 10-minute sample, the corresponding Raman spectrum is rather noisy. The D-to -G intensity ratio of the Raman peaks of the …
FIG. 2c is a graph of a device constructed by deposited graphene according to the present disclosure depicting source/drain current as a function of the Si …
FIG. 3a is a Raman spectroscopy output of intensity vs. Raman shift measured in cm- 1 for different growth periods of graphene on quartz for 1 m in, 5 m in, 10 …
FIG. 4b are graphs of measured transmittance (associated with left axis) of graphene grown on a quartz substrate and extracted absorbance of graphene …
FIG. 5 c is an XRD output comparing intensity vs. angle measured in degrees for Cu on Si and Si. 66989-03
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene deposition process, comprising: placing a substrate suitable to be heated only up to about 200 ° C into a deposition chamber; heating the chamber up to about 200 ° C; and generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate s wherein the precursor gas is flown through the plasma and over the substrate for a predetermined period of time, ranging between about 1 to about 30 minutes, wherein the precursor gas is flown over the substrate at a partial pressure of about 1 mTorr, wherein the precursor gas is flown over the substrate at a flow rate of about 6 s ec m, and wherein the precursor gas is selected from the group consisting of CH 4, C 2 H 2, C 2 H 4, and C 2 H. Currently amended
The process of claim 1, the substrate is a metal selected from the group consisting of Copper, Aluminum, Nickel, Titanium, Titanium Nitride, Cobalt, Ruthenium, Platinum, Iridium, and Silver. Withdrawn
The process of claim 1, the substrate is an insulator selected from the group consisting of SiO 2, Sapphire, MgO, and Quartz. Original
The process of claim 1, the substrate is a semiconductor selected from the group consisting of Silicon, Silicon Carbide, and GaAs. Withdrawn
The process of claim 1, prior to placing the substrate into the deposition chamber, comprising: washing the substrate with i) solvents; or ii) an etching solution. Original
The process of claim 1, the radio frequency plasma is generated at about 13.56 MHz. Original
The process of claim 1, the plasma is generated upstream from the substrate. Original
The process of claim 1, the plasma is generated adjacent to the substrate. Original
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
Canceled
The process of claim 17, the predetermined period of time is between about 1 to about 15 minutes, when the substrate is copper. Withdrawn
The process of claim 47 1, the predetermined period of time is between about 5 to about 15 minutes, when the substrate is Quartz. Currently amended
The process of claim 44 1, the predetermined period of time is between about 10 to about 15 minutes, when the substrate is SiO 2. Currently amended
Materials described outside the worked examples.
graphene
C
methane
CH₄
acetylene
C₂H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1000 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
ethylene
C₂H₄
C₂H (ethynyl)
C₂H
Copper
Cu
Aluminum
Al
Nickel
Ni
Titanium
Ti
Titanium Nitride
TiN
Cobalt
Co
Ruthenium
Ru
Platinum
Pt
Iridium
Ir
Silver
Ag
silicon dioxide
SiO₂
Sapphire
Al₂O₃
magnesium oxide
MgO
Silicon
Si
Silicon Carbide
SiC
gallium arsenide
GaAs
argon
Ar
| — |
Thickness | 100–100 nm | — |
Duration | 10–15 minutes | — |
Pressure | 1–4 Torr | — |
Duration | 1–15 minutes | — |
— | 10–1000 W | — |
Thickness | 1–3 nm | — |
Thickness | 5–10 nm | — |
Temperature | ≤ 150 °C | — |
Duration | 5–15 minutes | — |
ethylene
C₂H₄
C₂H (ethynyl)
C₂H
Copper
Cu
Aluminum
Al
Nickel
Ni
Titanium
Ti
Titanium Nitride
TiN
Cobalt
Co
Ruthenium
Ru
Platinum
Pt
Iridium
Ir
Silver
Ag
silicon dioxide
SiO₂
Sapphire
Al₂O₃
magnesium oxide
MgO
Silicon
Si
Silicon Carbide
SiC
gallium arsenide
GaAs
argon
Ar
| — |
Thickness | 100–100 nm | — |
Duration | 10–15 minutes | — |
Pressure | 1–4 Torr | — |
Duration | 1–15 minutes | — |
— | 10–1000 W | — |
Thickness | 1–3 nm | — |
Thickness | 5–10 nm | — |
Temperature | ≤ 150 °C | — |
Duration | 5–15 minutes | — |
ethylene
C₂H₄
C₂H (ethynyl)
C₂H
Copper
Cu
Aluminum
Al
Nickel
Ni
Titanium
Ti
Titanium Nitride
TiN
Cobalt
Co
Ruthenium
Ru
Platinum
Pt
Iridium
Ir
Silver
Ag
silicon dioxide
SiO₂
Sapphire
Al₂O₃
magnesium oxide
MgO
Silicon
Si
Silicon Carbide
SiC
gallium arsenide
GaAs
argon
Ar
| — |
Thickness | 100–100 nm | — |
Duration | 10–15 minutes | — |
Pressure | 1–4 Torr | — |
Duration | 1–15 minutes | — |
— | 10–1000 W | — |
Thickness | 1–3 nm | — |
Thickness | 5–10 nm | — |
Temperature | ≤ 150 °C | — |
Duration | 5–15 minutes | — |
ethylene
C₂H₄
C₂H (ethynyl)
C₂H
Copper
Cu
Aluminum
Al
Nickel
Ni
Titanium
Ti
Titanium Nitride
TiN
Cobalt
Co
Ruthenium
Ru
Platinum
Pt
Iridium
Ir
Silver
Ag
silicon dioxide
SiO₂
Sapphire
Al₂O₃
magnesium oxide
MgO
Silicon
Si
Silicon Carbide
SiC
gallium arsenide
GaAs
argon
Ar
| — |
Thickness | 100–100 nm | — |
Duration | 10–15 minutes | — |
Pressure | 1–4 Torr | — |
Duration | 1–15 minutes | — |
— | 10–1000 W | — |
Thickness | 1–3 nm | — |
Thickness | 5–10 nm | — |
Temperature | ≤ 150 °C | — |
Duration | 5–15 minutes | — |