A method for producing a graphene layer from a liquid metal matrix on a solid metal or ceramic substrate, wherein a multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy with a melting point in the range from 1,051 0 C and 1,150 0 C and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points in the range from 1,15 P C to 3,410 0 C, is subjected to heat treatment in the following stages:-plate heating until the plate reaches a temperature that is between 0.5 0 C and 50 0 C higher than the melting point of the forming matrix,-annealing, at a constant or variable temperature from the temperature range, for a period between 60 and 600 seconds, concurrently supplying the atmosphere with acetylene at a partial pressure of ctwees an-gt 4 h Pa, ethylene at a partial pressure of betwc (0 an dn ol 4 hPa and hydrogen at a partial pressure of be -ween-a dup to 2 hPa for a period between 10 and 300 seconds,-cooling, partially controlled, with the cooling rate maintained between 0.1 and 2 0 C/min in the temperature range of 1,200 0 C-1,050 0 C, where consecutive stages of heating, annealing and cooling are conducted in the atmosphere of pure argon at a constant partial pressure varying from 1 hPa to 1,100 h Pad l Pa. ' herein th e tr ansition m etal is sel ected from the group cons ist ineg of plat in'um. io vbd.engir palladium and nickel, and._{__}Mnh.e transit ion me ta l is p latinum, the platinum plate. whic h is at l east 0.2 nun tiick and coated b y electrolysis on one side with a 0.2 mm thick copper layer, is placed in t h e -3- Application No. 14/069,731 chamber of a vacuum furn ace, at which point, aster renm ovin g a ir from the chamber t o the vacuum l eve l of 10` hPa ar gon is su p pli ed into the furnace chamber in s uich a way as t o maintain the partial press ure of argon throug hout t he entire process at the level of 2 0 bPs, vwherehy concurrently with the Gofngn at f argon spply tle pate heatin gprocess is initiated and continued until the plate reaches.100 0 C and the tem perature flfhtep ite stabilizes a t this level fo r 2 n11 with acetyl e ne, e th yl ene, hydrog en and.argoni additional ly suip lied into the flurnace chamber for 60 seconds during the period of niaintaining constant temperature until the partialpressu re re aches 2.8 hPa, aloow ing wh i ch t heprl ate is coo led down at a rate of I eC/ninto1L₅ C s g which point rapid uncontrolled cooling to the ambient tempera tur e jsco ntin ued in the ftniace cha nber, 12 whe n th e tra nsition metal is molybdenum, a m ol bdentun plate wi th a thickne ss of 4.5 mn and di mensio ns of 50x: 50 mm i s coat ed ra m agnetron sputtering with a 40um thick laye r of nickel and then a 1_.5 mm hick l ayer of cop per and is plac e d in the chamber of a vaueluu n furnac e, at whichpoint, after removing air frorn the c hambeor to the vacuum level, of' 10 hfta, argon is supplied _ into t he furnace chaber in such a way as t o maintain the partial sr trr cif argon throughott the entir;pcess at the level ofi I₁ 00 liPs, wh ereb y'at the same time the plate heatin gproc ess is initiated and con tinued until the plate reaches_.1₀0CC and thenttempera tur e of t he plat e stabili zes at t his lev el for 10 m inutes with additi onalhydrege suppli ed in to the furnace chamber for 120 seconds j dring the period of heating to the tet perature to ac hieve the p artial pr essur e of (jhP a, follow i na whichtiheplateits coo l d down a t a rate of 0.2 0 Cmlinto I,050 0 C. at which, point rapid uncontro ledcooingtothe ambient temper ature is c ontinued i n the fu rn ace chamber, and where in the metalloid or its compound is silicon or q uartz, and when the m etall oid or its c omponl d is quar tz a guartzgIss pjge which.is at least 0.8 mm thick and coated with a 300 nm thick Laver of silicon and a 1,0 00 nm thick layer of -4- Application No. 14/069,731 copper si_ placed in the c hamber of a vacu um furnace, at which point, after removing air fro m the chanute r to t he vacuu n t eve l of 10- o hPa. arg on is s upplied i nto the furm ace cha mb er in such a wa y as to maintain the partial pyes sure of ar: on t hroughout th e entire process at the leve l of 50.h Pawh ere b y aft e r rnin utes the plate heati ng proce ss is initiated and continu ed until the plat e reaches 1,090 0 C and the t~epe rat u re o f the plate stabilizes at this l evel for 5 minu tes. w ith addition al g as es supplied i ntothe furn a ce g hamber for 2 0 second s dur img thq period of maintaining cons tant temperatur e: acetylene-to achieve the partial press u re of 2 lila, et hyle ne-to reachth e partial pressure of 2-h Pa and hydrogen-t o a tt ain the pa rtial pressure o f 1 hPa, fol l owing which the plate is c ooled down at a rate of 0.2 0 C/min to I,075C. a tiwbihiojut rapid u n contro ll ed c oolin g to t he am bie nt.temper ature is conr tinued in the furnace chamber.

canceled

canceled

The method according to cai4an cla i m, wherein the p~at4l'atf 6 i. w hie h is at ie a. t-4 X₂ mnv -rh ick a n d co at ed by el e c4 1 e iysis on-with a SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.1.svg 0.18 6.05 Black and white.ter-reevgai+ =r- the ehaube r to th &-* a cuu m lcal o f 1 ` 3 1 Pa, argondsspplid--te the -utueci rthamlxrr:- sueh-a way-as.t-maaflaitnhepartiaklpr suw cal-rgn -thrEughaI-the c- trepr oce serat h l v c Le f 20bPa vhe reby -eom curren ty with th e-em rnencem e nt of argo n supply the -p-lnkheatingl.eess-itatd-an-eotiru~d-ntilh-tltate.-ieaehed4A00 5 G-ad -5- Application No. 14/069,73 1 tla:..empe "re-c:-thc-p te-.s.tafilis.es-alt;:hia i..eveb%±i2#nn;wit acee4yene-a=hykene hyclroge rw-an ar g o addk tional y s tpr.,tL. l thenwi-w.a ce c h amw for 60±e n m ds dur ing4-The perioE-tmait=i.in *g-E a t4e-pe rat ure-n4tihe a sia-presure-reaeia.s.28.-hPa fbAl-wig- vhich ~a--e.eled-d 1 wn--rate of 1 4 2/min to A 7-4" C, at which -p oint rap -id- unc {t oiled oe3irn t-ihe-..a t-ien tas perat ure-is.tsoiitimsed-in thefur-naee eh-tam berd he sup oar t subst ra te is n made of p atinu.

The method according to clam -.4; laim 1, wherein a f- olv bde +- M -wi t a thick.eS 4. n arid dim nt- iaons Af E5x50 n in -co 5ed by nagnetn t pu teri.ng-witivo.4()4 -t4hik iyr t --nicke -adnhen a.-mma thick-ae r o f fpp er a nd- p-a ced rn- the-hamb er iof a v ieUt urmae-at whie h-poi nt, af t er-remw ing air fremhe-eambrae~evaeem-ev LW 4-hPa-arg onwis supp kceo-tntoethe--fmac e-eh run ber i-n-s uch a-w a y as r-t-o- ai ntai --tha-tparHaal--p ressure of -a r g on t 'pFthoU t th e-e--t oir pro e s-s it the level of 4-.1(- hPa -whereby at-{pesamehnmethe-pAr e healing-preeess-ar-mihiaed-ca eenti-ued-ut ii the p la reehe s -- V₁₄₀ C a m4-ent in p erat ure 4-the p lat e-stab ilizes a t-gis level _.1 1 nimites-wih-edd i io a-hydroge cn-ppice'3 -I-I t -4fetviatee chamber-fr- 120 see s.cls -dag he-p e riod -of4craimgto4h e t eimn p t ure t e- thi eve t h -ti al pro ss ure of 6 9 hPa.tbl.r1i`.wing vhiel:i-plat es. -o w led detwit at- a-ite-f12# ito -1 044 9 Grt-whieh po4A t rap r-4- ncontrd ie d cooli n g-44h c a. b len t temp er-at ure is -e-n t i nutied.-4h e furnac e thaml n r the s uppo rt su bstrate is ma de of moly bdenum.

The method according to ctaimS olahimi 1, wherein a q-rarntz-g~leas~jaltc v hieh -h -at -n-st P-0mnT-hic k-an do ated -wik-a-31Pm-tlek Thycitof SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.2.svg 0.18 6.35 Black and white \wlt-i-poiot afte r- emovi -neair brn the c hamber -drevaraim evel- oP- 1Pt hPa r- arge -is:i e ip-71d-4i-o e t h ti-rnae s--e ha r.be1-- i suc ha-w a y a s-I--r ainta-I h e p h a-tI esstwe -ef-arg on.

A method for producing a graphene layer from a liquid metal matrix on a solid metal or ceramic substrate, wherein a multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy with a melting point in the range from 1,051 0 C and 1,150 0 C and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points in the range from 1,15 P C to 3,410 0 C, is subjected to heat treatment in the following stages:-plate heating until the plate reaches a temperature that is between 0.5 0 C and 50 0 C higher than the melting point of the forming matrix,-annealing, at a constant or variable temperature from the temperature range, for a period between 60 and 600 seconds, concurrently supplying the atmosphere with acetylene at a partial pressure of ctwees an-gt 4 h Pa, ethylene at a partial pressure of betwc (0 an dn ol 4 hPa and hydrogen at a partial pressure of be -ween-a dup to 2 hPa for a period between 10 and 300 seconds,-cooling, partially controlled, with the cooling rate maintained between 0.1 and 2 0 C/min in the temperature range of 1,200 0 C-1,050 0 C, where consecutive stages of heating, annealing and cooling are conducted in the atmosphere of pure argon at a constant partial pressure varying from 1 hPa to 1,100 h Pad l Pa. ' herein th e tr ansition m etal is sel ected from the group cons ist ineg of plat in'um. io vbd.engir palladium and nickel, and._{__}Mnh.e transit ion me ta l is p latinum, the platinum plate. whic h is at l east 0.2 nun tiick and coated b y electrolysis on one side with a 0.2 mm thick copper layer, is placed in t h e -3- Application No. 14/069,731 chamber of a vacuum furn ace, at which point, aster renm ovin g a ir from the chamber t o the vacuum l eve l of 10` hPa ar gon is su p pli ed into the furnace chamber in s uich a way as t o maintain the partial press ure of argon throug hout t he entire process at the level of 2 0 bPs, vwherehy concurrently with the Gofngn at f argon spply tle pate heatin gprocess is initiated and continued until the plate reaches.100 0 C and the tem perature flfhtep ite stabilizes a t this level fo r 2 n11 with acetyl e ne, e th yl ene, hydrog en and.argoni additional ly suip lied into the flurnace chamber for 60 seconds during the period of niaintaining constant temperature until the partialpressu re re aches 2.8 hPa, aloow ing wh i ch t heprl ate is coo led down at a rate of I eC/ninto1L₅ C s g which point rapid uncontrolled cooling to the ambient tempera tur e jsco ntin ued in the ftniace cha nber, 12 whe n th e tra nsition metal is molybdenum, a m ol bdentun plate wi th a thickne ss of 4.5 mn and di mensio ns of 50x: 50 mm i s coat ed ra m agnetron sputtering with a 40um thick laye r of nickel and then a 1_.5 mm hick l ayer of cop per and is plac e d in the chamber of a vaueluu n furnac e, at whichpoint, after removing air frorn the c hambeor to the vacuum level, of' 10 hfta, argon is supplied _ into t he furnace chaber in such a way as t o maintain the partial sr trr cif argon throughott the entir;pcess at the level ofi I₁ 00 liPs, wh ereb y'at the same time the plate heatin gproc ess is initiated and con tinued until the plate reaches_.1₀0CC and thenttempera tur e of t he plat e stabili zes at t his lev el for 10 m inutes with additi onalhydrege suppli ed in to the furnace chamber for 120 seconds j dring the period of heating to the tet perature to ac hieve the p artial pr essur e of (jhP a, follow i na whichtiheplateits coo l d down a t a rate of 0.2 0 Cmlinto I,050 0 C. at which, point rapid uncontro ledcooingtothe ambient temper ature is c ontinued i n the fu rn ace chamber, and where in the metalloid or its compound is silicon or q uartz, and when the m etall oid or its c omponl d is quar tz a guartzgIss pjge which.is at least 0.8 mm thick and coated with a 300 nm thick Laver of silicon and a 1,0 00 nm thick layer of -4- Application No. 14/069,731 copper si_ placed in the c hamber of a vacu um furnace, at which point, after removing air fro m the chanute r to t he vacuu n t eve l of 10- o hPa. arg on is s upplied i nto the furm ace cha mb er in such a wa y as to maintain the partial pyes sure of ar: on t hroughout th e entire process at the leve l of 50.h Pawh ere b y aft e r rnin utes the plate heati ng proce ss is initiated and continu ed until the plat e reaches 1,090 0 C and the t~epe rat u re o f the plate stabilizes at this l evel for 5 minu tes. w ith addition al g as es supplied i ntothe furn a ce g hamber for 2 0 second s dur img thq period of maintaining cons tant temperatur e: acetylene-to achieve the partial press u re of 2 lila, et hyle ne-to reachth e partial pressure of 2-h Pa and hydrogen-t o a tt ain the pa rtial pressure o f 1 hPa, fol l owing which the plate is c ooled down at a rate of 0.2 0 C/min to I,075C. a tiwbihiojut rapid u n contro ll ed c oolin g to t he am bie nt.temper ature is conr tinued in the furnace chamber.

canceled

canceled

The method according to cai4an cla i m, wherein the p~at4l'atf 6 i. w hie h is at ie a. t-4 X₂ mnv -rh ick a n d co at ed by el e c4 1 e iysis on-with a SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.1.svg 0.18 6.05 Black and white.ter-reevgai+ =r- the ehaube r to th &-* a cuu m lcal o f 1 ` 3 1 Pa, argondsspplid--te the -utueci rthamlxrr:- sueh-a way-as.t-maaflaitnhepartiaklpr suw cal-rgn -thrEughaI-the c- trepr oce serat h l v c Le f 20bPa vhe reby -eom curren ty with th e-em rnencem e nt of argo n supply the -p-lnkheatingl.eess-itatd-an-eotiru~d-ntilh-tltate.-ieaehed4A00 5 G-ad -5- Application No. 14/069,73 1 tla:..empe "re-c:-thc-p te-.s.tafilis.es-alt;:hia i..eveb%±i2#nn;wit acee4yene-a=hykene hyclroge rw-an ar g o addk tional y s tpr.,tL. l thenwi-w.a ce c h amw for 60±e n m ds dur ing4-The perioE-tmait=i.in *g-E a t4e-pe rat ure-n4tihe a sia-presure-reaeia.s.28.-hPa fbAl-wig- vhich ~a--e.eled-d 1 wn--rate of 1 4 2/min to A 7-4" C, at which -p oint rap -id- unc {t oiled oe3irn t-ihe-..a t-ien tas perat ure-is.tsoiitimsed-in thefur-naee eh-tam berd he sup oar t subst ra te is n made of p atinu.

The method according to clam -.4; laim 1, wherein a f- olv bde +- M -wi t a thick.eS 4. n arid dim nt- iaons Af E5x50 n in -co 5ed by nagnetn t pu teri.ng-witivo.4()4 -t4hik iyr t --nicke -adnhen a.-mma thick-ae r o f fpp er a nd- p-a ced rn- the-hamb er iof a v ieUt urmae-at whie h-poi nt, af t er-remw ing air fremhe-eambrae~evaeem-ev LW 4-hPa-arg onwis supp kceo-tntoethe--fmac e-eh run ber i-n-s uch a-w a y as r-t-o- ai ntai --tha-tparHaal--p ressure of -a r g on t 'pFthoU t th e-e--t oir pro e s-s it the level of 4-.1(- hPa -whereby at-{pesamehnmethe-pAr e healing-preeess-ar-mihiaed-ca eenti-ued-ut ii the p la reehe s -- V₁₄₀ C a m4-ent in p erat ure 4-the p lat e-stab ilizes a t-gis level _.1 1 nimites-wih-edd i io a-hydroge cn-ppice'3 -I-I t -4fetviatee chamber-fr- 120 see s.cls -dag he-p e riod -of4craimgto4h e t eimn p t ure t e- thi eve t h -ti al pro ss ure of 6 9 hPa.tbl.r1i`.wing vhiel:i-plat es. -o w led detwit at- a-ite-f12# ito -1 044 9 Grt-whieh po4A t rap r-4- ncontrd ie d cooli n g-44h c a. b len t temp er-at ure is -e-n t i nutied.-4h e furnac e thaml n r the s uppo rt su bstrate is ma de of moly bdenum.

The method according to ctaimS olahimi 1, wherein a q-rarntz-g~leas~jaltc v hieh -h -at -n-st P-0mnT-hic k-an do ated -wik-a-31Pm-tlek Thycitof SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.2.svg 0.18 6.35 Black and white \wlt-i-poiot afte r- emovi -neair brn the c hamber -drevaraim evel- oP- 1Pt hPa r- arge -is:i e ip-71d-4i-o e t h ti-rnae s--e ha r.be1-- i suc ha-w a y a s-I--r ainta-I h e p h a-tI esstwe -ef-arg on.

A method for producing a graphene layer from a liquid metal matrix on a solid metal or ceramic substrate, wherein a multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy with a melting point in the range from 1,051 0 C and 1,150 0 C and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points in the range from 1,15 P C to 3,410 0 C, is subjected to heat treatment in the following stages:-plate heating until the plate reaches a temperature that is between 0.5 0 C and 50 0 C higher than the melting point of the forming matrix,-annealing, at a constant or variable temperature from the temperature range, for a period between 60 and 600 seconds, concurrently supplying the atmosphere with acetylene at a partial pressure of ctwees an-gt 4 h Pa, ethylene at a partial pressure of betwc (0 an dn ol 4 hPa and hydrogen at a partial pressure of be -ween-a dup to 2 hPa for a period between 10 and 300 seconds,-cooling, partially controlled, with the cooling rate maintained between 0.1 and 2 0 C/min in the temperature range of 1,200 0 C-1,050 0 C, where consecutive stages of heating, annealing and cooling are conducted in the atmosphere of pure argon at a constant partial pressure varying from 1 hPa to 1,100 h Pad l Pa. ' herein th e tr ansition m etal is sel ected from the group cons ist ineg of plat in'um. io vbd.engir palladium and nickel, and._{__}Mnh.e transit ion me ta l is p latinum, the platinum plate. whic h is at l east 0.2 nun tiick and coated b y electrolysis on one side with a 0.2 mm thick copper layer, is placed in t h e -3- Application No. 14/069,731 chamber of a vacuum furn ace, at which point, aster renm ovin g a ir from the chamber t o the vacuum l eve l of 10` hPa ar gon is su p pli ed into the furnace chamber in s uich a way as t o maintain the partial press ure of argon throug hout t he entire process at the level of 2 0 bPs, vwherehy concurrently with the Gofngn at f argon spply tle pate heatin gprocess is initiated and continued until the plate reaches.100 0 C and the tem perature flfhtep ite stabilizes a t this level fo r 2 n11 with acetyl e ne, e th yl ene, hydrog en and.argoni additional ly suip lied into the flurnace chamber for 60 seconds during the period of niaintaining constant temperature until the partialpressu re re aches 2.8 hPa, aloow ing wh i ch t heprl ate is coo led down at a rate of I eC/ninto1L₅ C s g which point rapid uncontrolled cooling to the ambient tempera tur e jsco ntin ued in the ftniace cha nber, 12 whe n th e tra nsition metal is molybdenum, a m ol bdentun plate wi th a thickne ss of 4.5 mn and di mensio ns of 50x: 50 mm i s coat ed ra m agnetron sputtering with a 40um thick laye r of nickel and then a 1_.5 mm hick l ayer of cop per and is plac e d in the chamber of a vaueluu n furnac e, at whichpoint, after removing air frorn the c hambeor to the vacuum level, of' 10 hfta, argon is supplied _ into t he furnace chaber in such a way as t o maintain the partial sr trr cif argon throughott the entir;pcess at the level ofi I₁ 00 liPs, wh ereb y'at the same time the plate heatin gproc ess is initiated and con tinued until the plate reaches_.1₀0CC and thenttempera tur e of t he plat e stabili zes at t his lev el for 10 m inutes with additi onalhydrege suppli ed in to the furnace chamber for 120 seconds j dring the period of heating to the tet perature to ac hieve the p artial pr essur e of (jhP a, follow i na whichtiheplateits coo l d down a t a rate of 0.2 0 Cmlinto I,050 0 C. at which, point rapid uncontro ledcooingtothe ambient temper ature is c ontinued i n the fu rn ace chamber, and where in the metalloid or its compound is silicon or q uartz, and when the m etall oid or its c omponl d is quar tz a guartzgIss pjge which.is at least 0.8 mm thick and coated with a 300 nm thick Laver of silicon and a 1,0 00 nm thick layer of -4- Application No. 14/069,731 copper si_ placed in the c hamber of a vacu um furnace, at which point, after removing air fro m the chanute r to t he vacuu n t eve l of 10- o hPa. arg on is s upplied i nto the furm ace cha mb er in such a wa y as to maintain the partial pyes sure of ar: on t hroughout th e entire process at the leve l of 50.h Pawh ere b y aft e r rnin utes the plate heati ng proce ss is initiated and continu ed until the plat e reaches 1,090 0 C and the t~epe rat u re o f the plate stabilizes at this l evel for 5 minu tes. w ith addition al g as es supplied i ntothe furn a ce g hamber for 2 0 second s dur img thq period of maintaining cons tant temperatur e: acetylene-to achieve the partial press u re of 2 lila, et hyle ne-to reachth e partial pressure of 2-h Pa and hydrogen-t o a tt ain the pa rtial pressure o f 1 hPa, fol l owing which the plate is c ooled down at a rate of 0.2 0 C/min to I,075C. a tiwbihiojut rapid u n contro ll ed c oolin g to t he am bie nt.temper ature is conr tinued in the furnace chamber.

canceled

canceled

The method according to cai4an cla i m, wherein the p~at4l'atf 6 i. w hie h is at ie a. t-4 X₂ mnv -rh ick a n d co at ed by el e c4 1 e iysis on-with a SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.1.svg 0.18 6.05 Black and white.ter-reevgai+ =r- the ehaube r to th &-* a cuu m lcal o f 1 ` 3 1 Pa, argondsspplid--te the -utueci rthamlxrr:- sueh-a way-as.t-maaflaitnhepartiaklpr suw cal-rgn -thrEughaI-the c- trepr oce serat h l v c Le f 20bPa vhe reby -eom curren ty with th e-em rnencem e nt of argo n supply the -p-lnkheatingl.eess-itatd-an-eotiru~d-ntilh-tltate.-ieaehed4A00 5 G-ad -5- Application No. 14/069,73 1 tla:..empe "re-c:-thc-p te-.s.tafilis.es-alt;:hia i..eveb%±i2#nn;wit acee4yene-a=hykene hyclroge rw-an ar g o addk tional y s tpr.,tL. l thenwi-w.a ce c h amw for 60±e n m ds dur ing4-The perioE-tmait=i.in *g-E a t4e-pe rat ure-n4tihe a sia-presure-reaeia.s.28.-hPa fbAl-wig- vhich ~a--e.eled-d 1 wn--rate of 1 4 2/min to A 7-4" C, at which -p oint rap -id- unc {t oiled oe3irn t-ihe-..a t-ien tas perat ure-is.tsoiitimsed-in thefur-naee eh-tam berd he sup oar t subst ra te is n made of p atinu.

The method according to clam -.4; laim 1, wherein a f- olv bde +- M -wi t a thick.eS 4. n arid dim nt- iaons Af E5x50 n in -co 5ed by nagnetn t pu teri.ng-witivo.4()4 -t4hik iyr t --nicke -adnhen a.-mma thick-ae r o f fpp er a nd- p-a ced rn- the-hamb er iof a v ieUt urmae-at whie h-poi nt, af t er-remw ing air fremhe-eambrae~evaeem-ev LW 4-hPa-arg onwis supp kceo-tntoethe--fmac e-eh run ber i-n-s uch a-w a y as r-t-o- ai ntai --tha-tparHaal--p ressure of -a r g on t 'pFthoU t th e-e--t oir pro e s-s it the level of 4-.1(- hPa -whereby at-{pesamehnmethe-pAr e healing-preeess-ar-mihiaed-ca eenti-ued-ut ii the p la reehe s -- V₁₄₀ C a m4-ent in p erat ure 4-the p lat e-stab ilizes a t-gis level _.1 1 nimites-wih-edd i io a-hydroge cn-ppice'3 -I-I t -4fetviatee chamber-fr- 120 see s.cls -dag he-p e riod -of4craimgto4h e t eimn p t ure t e- thi eve t h -ti al pro ss ure of 6 9 hPa.tbl.r1i`.wing vhiel:i-plat es. -o w led detwit at- a-ite-f12# ito -1 044 9 Grt-whieh po4A t rap r-4- ncontrd ie d cooli n g-44h c a. b len t temp er-at ure is -e-n t i nutied.-4h e furnac e thaml n r the s uppo rt su bstrate is ma de of moly bdenum.

The method according to ctaimS olahimi 1, wherein a q-rarntz-g~leas~jaltc v hieh -h -at -n-st P-0mnT-hic k-an do ated -wik-a-31Pm-tlek Thycitof SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.2.svg 0.18 6.35 Black and white \wlt-i-poiot afte r- emovi -neair brn the c hamber -drevaraim evel- oP- 1Pt hPa r- arge -is:i e ip-71d-4i-o e t h ti-rnae s--e ha r.be1-- i suc ha-w a y a s-I--r ainta-I h e p h a-tI esstwe -ef-arg on.

A method for producing a graphene layer from a liquid metal matrix on a solid metal or ceramic substrate, wherein a multilayered plate containing, as the graphene forming matrix, an external layer composed of a metal or a metal alloy with a melting point in the range from 1,051 0 C and 1,150 0 C and, as a support substrate, between 1 and 5 layers made of transition metals and/or their alloys and/or metalloids and/or their solutions and compounds with melting points in the range from 1,15 P C to 3,410 0 C, is subjected to heat treatment in the following stages:-plate heating until the plate reaches a temperature that is between 0.5 0 C and 50 0 C higher than the melting point of the forming matrix,-annealing, at a constant or variable temperature from the temperature range, for a period between 60 and 600 seconds, concurrently supplying the atmosphere with acetylene at a partial pressure of ctwees an-gt 4 h Pa, ethylene at a partial pressure of betwc (0 an dn ol 4 hPa and hydrogen at a partial pressure of be -ween-a dup to 2 hPa for a period between 10 and 300 seconds,-cooling, partially controlled, with the cooling rate maintained between 0.1 and 2 0 C/min in the temperature range of 1,200 0 C-1,050 0 C, where consecutive stages of heating, annealing and cooling are conducted in the atmosphere of pure argon at a constant partial pressure varying from 1 hPa to 1,100 h Pad l Pa. ' herein th e tr ansition m etal is sel ected from the group cons ist ineg of plat in'um. io vbd.engir palladium and nickel, and._{__}Mnh.e transit ion me ta l is p latinum, the platinum plate. whic h is at l east 0.2 nun tiick and coated b y electrolysis on one side with a 0.2 mm thick copper layer, is placed in t h e -3- Application No. 14/069,731 chamber of a vacuum furn ace, at which point, aster renm ovin g a ir from the chamber t o the vacuum l eve l of 10` hPa ar gon is su p pli ed into the furnace chamber in s uich a way as t o maintain the partial press ure of argon throug hout t he entire process at the level of 2 0 bPs, vwherehy concurrently with the Gofngn at f argon spply tle pate heatin gprocess is initiated and continued until the plate reaches.100 0 C and the tem perature flfhtep ite stabilizes a t this level fo r 2 n11 with acetyl e ne, e th yl ene, hydrog en and.argoni additional ly suip lied into the flurnace chamber for 60 seconds during the period of niaintaining constant temperature until the partialpressu re re aches 2.8 hPa, aloow ing wh i ch t heprl ate is coo led down at a rate of I eC/ninto1L₅ C s g which point rapid uncontrolled cooling to the ambient tempera tur e jsco ntin ued in the ftniace cha nber, 12 whe n th e tra nsition metal is molybdenum, a m ol bdentun plate wi th a thickne ss of 4.5 mn and di mensio ns of 50x: 50 mm i s coat ed ra m agnetron sputtering with a 40um thick laye r of nickel and then a 1_.5 mm hick l ayer of cop per and is plac e d in the chamber of a vaueluu n furnac e, at whichpoint, after removing air frorn the c hambeor to the vacuum level, of' 10 hfta, argon is supplied _ into t he furnace chaber in such a way as t o maintain the partial sr trr cif argon throughott the entir;pcess at the level ofi I₁ 00 liPs, wh ereb y'at the same time the plate heatin gproc ess is initiated and con tinued until the plate reaches_.1₀0CC and thenttempera tur e of t he plat e stabili zes at t his lev el for 10 m inutes with additi onalhydrege suppli ed in to the furnace chamber for 120 seconds j dring the period of heating to the tet perature to ac hieve the p artial pr essur e of (jhP a, follow i na whichtiheplateits coo l d down a t a rate of 0.2 0 Cmlinto I,050 0 C. at which, point rapid uncontro ledcooingtothe ambient temper ature is c ontinued i n the fu rn ace chamber, and where in the metalloid or its compound is silicon or q uartz, and when the m etall oid or its c omponl d is quar tz a guartzgIss pjge which.is at least 0.8 mm thick and coated with a 300 nm thick Laver of silicon and a 1,0 00 nm thick layer of -4- Application No. 14/069,731 copper si_ placed in the c hamber of a vacu um furnace, at which point, after removing air fro m the chanute r to t he vacuu n t eve l of 10- o hPa. arg on is s upplied i nto the furm ace cha mb er in such a wa y as to maintain the partial pyes sure of ar: on t hroughout th e entire process at the leve l of 50.h Pawh ere b y aft e r rnin utes the plate heati ng proce ss is initiated and continu ed until the plat e reaches 1,090 0 C and the t~epe rat u re o f the plate stabilizes at this l evel for 5 minu tes. w ith addition al g as es supplied i ntothe furn a ce g hamber for 2 0 second s dur img thq period of maintaining cons tant temperatur e: acetylene-to achieve the partial press u re of 2 lila, et hyle ne-to reachth e partial pressure of 2-h Pa and hydrogen-t o a tt ain the pa rtial pressure o f 1 hPa, fol l owing which the plate is c ooled down at a rate of 0.2 0 C/min to I,075C. a tiwbihiojut rapid u n contro ll ed c oolin g to t he am bie nt.temper ature is conr tinued in the furnace chamber.

canceled

canceled

The method according to cai4an cla i m, wherein the p~at4l'atf 6 i. w hie h is at ie a. t-4 X₂ mnv -rh ick a n d co at ed by el e c4 1 e iysis on-with a SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.1.svg 0.18 6.05 Black and white.ter-reevgai+ =r- the ehaube r to th &-* a cuu m lcal o f 1 ` 3 1 Pa, argondsspplid--te the -utueci rthamlxrr:- sueh-a way-as.t-maaflaitnhepartiaklpr suw cal-rgn -thrEughaI-the c- trepr oce serat h l v c Le f 20bPa vhe reby -eom curren ty with th e-em rnencem e nt of argo n supply the -p-lnkheatingl.eess-itatd-an-eotiru~d-ntilh-tltate.-ieaehed4A00 5 G-ad -5- Application No. 14/069,73 1 tla:..empe "re-c:-thc-p te-.s.tafilis.es-alt;:hia i..eveb%±i2#nn;wit acee4yene-a=hykene hyclroge rw-an ar g o addk tional y s tpr.,tL. l thenwi-w.a ce c h amw for 60±e n m ds dur ing4-The perioE-tmait=i.in *g-E a t4e-pe rat ure-n4tihe a sia-presure-reaeia.s.28.-hPa fbAl-wig- vhich ~a--e.eled-d 1 wn--rate of 1 4 2/min to A 7-4" C, at which -p oint rap -id- unc {t oiled oe3irn t-ihe-..a t-ien tas perat ure-is.tsoiitimsed-in thefur-naee eh-tam berd he sup oar t subst ra te is n made of p atinu.

The method according to clam -.4; laim 1, wherein a f- olv bde +- M -wi t a thick.eS 4. n arid dim nt- iaons Af E5x50 n in -co 5ed by nagnetn t pu teri.ng-witivo.4()4 -t4hik iyr t --nicke -adnhen a.-mma thick-ae r o f fpp er a nd- p-a ced rn- the-hamb er iof a v ieUt urmae-at whie h-poi nt, af t er-remw ing air fremhe-eambrae~evaeem-ev LW 4-hPa-arg onwis supp kceo-tntoethe--fmac e-eh run ber i-n-s uch a-w a y as r-t-o- ai ntai --tha-tparHaal--p ressure of -a r g on t 'pFthoU t th e-e--t oir pro e s-s it the level of 4-.1(- hPa -whereby at-{pesamehnmethe-pAr e healing-preeess-ar-mihiaed-ca eenti-ued-ut ii the p la reehe s -- V₁₄₀ C a m4-ent in p erat ure 4-the p lat e-stab ilizes a t-gis level _.1 1 nimites-wih-edd i io a-hydroge cn-ppice'3 -I-I t -4fetviatee chamber-fr- 120 see s.cls -dag he-p e riod -of4craimgto4h e t eimn p t ure t e- thi eve t h -ti al pro ss ure of 6 9 hPa.tbl.r1i`.wing vhiel:i-plat es. -o w led detwit at- a-ite-f12# ito -1 044 9 Grt-whieh po4A t rap r-4- ncontrd ie d cooli n g-44h c a. b len t temp er-at ure is -e-n t i nutied.-4h e furnac e thaml n r the s uppo rt su bstrate is ma de of moly bdenum.

The method according to ctaimS olahimi 1, wherein a q-rarntz-g~leas~jaltc v hieh -h -at -n-st P-0mnT-hic k-an do ated -wik-a-31Pm-tlek Thycitof SVG 14069731.10-19-2015.IFYEUTKRPXXIFW3.CLM.2.svg 0.18 6.35 Black and white \wlt-i-poiot afte r- emovi -neair brn the c hamber -drevaraim evel- oP- 1Pt hPa r- arge -is:i e ip-71d-4i-o e t h ti-rnae s--e ha r.be1-- i suc ha-w a y a s-I--r ainta-I h e p h a-tI esstwe -ef-arg on.