Patent
US 9,966,531PATTERNING METHOD FOR GRAPHENE USING HOT-EMBOSSING IMPRINTING
Byung Hee Hong
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,966,531Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 schematically illustrates a patterning method of graphene using a roll- to-roll hot mold in accordance with an example embodiment of the present …
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
FIG. 4 provides photos showing a patterning method of graphene in accordance with an example of the present disclosure. BEST MODE FOR CARRY I NG OUT THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterning method of a graphene, comprising: a step of for m ing a graphene layer on a polymer substrate; and a step of forming a nanopattern in the g raphene layer by hot embossing i m printing, wherein, in the step of formin g a nano p attern in the g raphene. the ra hene la y er is cleaved, and the cleaved grap hene is present on each of a protrusion and a recessed portion of the nano p atte rn formed on the polym er substrate under the gra hene later. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the g raphene layer by hot embossing imprinting includes contacting a hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the graphene layer includes contacting a roll-to-roll hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a member selected from the group consisting of polyarylate, polyethylene terephthalate, polybutylene terephthalate, polysilane, polysiloxane, polysilazane, polyethylene, polycarbosilane, polyacrylate, polymethacrylate, polymethylacrylate, poly(met h ylmethacrylate), polyethylacrylate, cyclic olefin copolymer, poly(ethyl methacrylate), cyclic olefin polymer, polypropylene, polyimide, polystyrene, polyvinyl chloride, polyacetal, polyether ether ketone, polyester sulfone, polytetra f luoroethylene, polyvinylidene fluoride, perfluoroalkyl polymer, and combinations thereof. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a thermosetting polymer. Original
The patterning method of Claim 1, wherein the polymer substrate is fo rm ed on a support member. Currently amended
A graphene nanopattern formed by the method of Claim 1. Withdrawn
A patterning method of a grap hene, comprising: a step of forming a graphene la y er on a polymer substrate; and a step of fo rming a nanopattern in the graphene la y er by hot embossing imprinting, wherein the step of forming a nanopattern on the in the g raphene layer by hot embossing im p rinting includes contacting a hot mold, in which a nano p atte rn is for m ed, to the g raphene la y er followed by heating and pressing the graphene la y er, wherein, in the step of forming a nanopattern in the graphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo r ed on the polymer substrate under the graphene layer. Currently amended
(Currently Amended) A patternin g method of a g raphene, comprising: a step of forming a graphene la y er on a poly m er substrate; and a step of forming a nanopattern in the g raphene la y er by h o t embossing imprinting, wherein the ste p of formin g a nano p attern in the grap hene la v er includes contacting a roll-to-roll hot mold, in which a nano p attern is fo nn ed, to the g raphene la v er followed by heating and p ressing the arao hene la ver, wherein, in the step of forming a nanopattern in the g raphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the roll-to-roll hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo rm ed on the polymer substrate under the graphene layer. Currently amended
(Original) The patterning method of Claim i, wherein the step of fo rm ing a graphene l ayer on the polymer substrate includes transferring a graphene sheet f o rmed by chemical vapor deposition to the polymer substrate. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
A graphene patterning process using hot embossing imprinting was demonstrated. A hot mold was positioned on graphene, pressure was applied, and a pattern was formed. Resistance measurements confirmed electrical cleavage: non-patterned graphene showed 209.8 Ω; graphene measured across a traversing pattern (with the pattern between contacts) showed infinite resistance (no current flow, measured as 0 Ω reading interpreted as open circuit); graphene measured along the pattern direction showed 124.7 Ω, confirming electrical isolation across the patterned region.
Layer stacks claimed or described, ordered top of device to substrate.
display device with graphene nanopattern
Materials described outside the worked examples.
polymer substrate
polydimethylsiloxane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 209.8 Ω | graphene |
Fet Resistance |
Related documents with shared materials, methods, properties, or citations.
METHOD OF MANUFACTURING GRAPHENE, CARBON NANOTUBES, FULLERENE, GRAPHITE OR A COMBINATION THEREOF HAVING A POSITION SPECIFICALLY REGULATED RESISTANCE
NEURONAL SCAFFOLD-WATER SOLUBLE GRAPHENE FOR TREATMENT OF SEVERED SPINAL CORDS AND NEURONAL REPAIR
Patent
Atlas literature
Patent
US 9,966,531Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 schematically illustrates a patterning method of graphene using a roll- to-roll hot mold in accordance with an example embodiment of the present …
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
FIG. 4 provides photos showing a patterning method of graphene in accordance with an example of the present disclosure. BEST MODE FOR CARRY I NG OUT THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterning method of a graphene, comprising: a step of for m ing a graphene layer on a polymer substrate; and a step of forming a nanopattern in the g raphene layer by hot embossing i m printing, wherein, in the step of formin g a nano p attern in the g raphene. the ra hene la y er is cleaved, and the cleaved grap hene is present on each of a protrusion and a recessed portion of the nano p atte rn formed on the polym er substrate under the gra hene later. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the g raphene layer by hot embossing imprinting includes contacting a hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the graphene layer includes contacting a roll-to-roll hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a member selected from the group consisting of polyarylate, polyethylene terephthalate, polybutylene terephthalate, polysilane, polysiloxane, polysilazane, polyethylene, polycarbosilane, polyacrylate, polymethacrylate, polymethylacrylate, poly(met h ylmethacrylate), polyethylacrylate, cyclic olefin copolymer, poly(ethyl methacrylate), cyclic olefin polymer, polypropylene, polyimide, polystyrene, polyvinyl chloride, polyacetal, polyether ether ketone, polyester sulfone, polytetra f luoroethylene, polyvinylidene fluoride, perfluoroalkyl polymer, and combinations thereof. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a thermosetting polymer. Original
The patterning method of Claim 1, wherein the polymer substrate is fo rm ed on a support member. Currently amended
A graphene nanopattern formed by the method of Claim 1. Withdrawn
A patterning method of a grap hene, comprising: a step of forming a graphene la y er on a polymer substrate; and a step of fo rming a nanopattern in the graphene la y er by hot embossing imprinting, wherein the step of forming a nanopattern on the in the g raphene layer by hot embossing im p rinting includes contacting a hot mold, in which a nano p atte rn is for m ed, to the g raphene la y er followed by heating and pressing the graphene la y er, wherein, in the step of forming a nanopattern in the graphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo r ed on the polymer substrate under the graphene layer. Currently amended
(Currently Amended) A patternin g method of a g raphene, comprising: a step of forming a graphene la y er on a poly m er substrate; and a step of forming a nanopattern in the g raphene la y er by h o t embossing imprinting, wherein the ste p of formin g a nano p attern in the grap hene la v er includes contacting a roll-to-roll hot mold, in which a nano p attern is fo nn ed, to the g raphene la v er followed by heating and p ressing the arao hene la ver, wherein, in the step of forming a nanopattern in the g raphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the roll-to-roll hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo rm ed on the polymer substrate under the graphene layer. Currently amended
(Original) The patterning method of Claim i, wherein the step of fo rm ing a graphene l ayer on the polymer substrate includes transferring a graphene sheet f o rmed by chemical vapor deposition to the polymer substrate. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
A graphene patterning process using hot embossing imprinting was demonstrated. A hot mold was positioned on graphene, pressure was applied, and a pattern was formed. Resistance measurements confirmed electrical cleavage: non-patterned graphene showed 209.8 Ω; graphene measured across a traversing pattern (with the pattern between contacts) showed infinite resistance (no current flow, measured as 0 Ω reading interpreted as open circuit); graphene measured along the pattern direction showed 124.7 Ω, confirming electrical isolation across the patterned region.
Layer stacks claimed or described, ordered top of device to substrate.
display device with graphene nanopattern
Materials described outside the worked examples.
polymer substrate
polydimethylsiloxane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 209.8 Ω | graphene |
Fet Resistance |
Related documents with shared materials, methods, properties, or citations.
METHOD OF MANUFACTURING GRAPHENE, CARBON NANOTUBES, FULLERENE, GRAPHITE OR A COMBINATION THEREOF HAVING A POSITION SPECIFICALLY REGULATED RESISTANCE
NEURONAL SCAFFOLD-WATER SOLUBLE GRAPHENE FOR TREATMENT OF SEVERED SPINAL CORDS AND NEURONAL REPAIR
Patent
Atlas literature
Patent
US 9,966,531Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 schematically illustrates a patterning method of graphene using a roll- to-roll hot mold in accordance with an example embodiment of the present …
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
FIG. 4 provides photos showing a patterning method of graphene in accordance with an example of the present disclosure. BEST MODE FOR CARRY I NG OUT THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterning method of a graphene, comprising: a step of for m ing a graphene layer on a polymer substrate; and a step of forming a nanopattern in the g raphene layer by hot embossing i m printing, wherein, in the step of formin g a nano p attern in the g raphene. the ra hene la y er is cleaved, and the cleaved grap hene is present on each of a protrusion and a recessed portion of the nano p atte rn formed on the polym er substrate under the gra hene later. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the g raphene layer by hot embossing imprinting includes contacting a hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the graphene layer includes contacting a roll-to-roll hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a member selected from the group consisting of polyarylate, polyethylene terephthalate, polybutylene terephthalate, polysilane, polysiloxane, polysilazane, polyethylene, polycarbosilane, polyacrylate, polymethacrylate, polymethylacrylate, poly(met h ylmethacrylate), polyethylacrylate, cyclic olefin copolymer, poly(ethyl methacrylate), cyclic olefin polymer, polypropylene, polyimide, polystyrene, polyvinyl chloride, polyacetal, polyether ether ketone, polyester sulfone, polytetra f luoroethylene, polyvinylidene fluoride, perfluoroalkyl polymer, and combinations thereof. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a thermosetting polymer. Original
The patterning method of Claim 1, wherein the polymer substrate is fo rm ed on a support member. Currently amended
A graphene nanopattern formed by the method of Claim 1. Withdrawn
A patterning method of a grap hene, comprising: a step of forming a graphene la y er on a polymer substrate; and a step of fo rming a nanopattern in the graphene la y er by hot embossing imprinting, wherein the step of forming a nanopattern on the in the g raphene layer by hot embossing im p rinting includes contacting a hot mold, in which a nano p atte rn is for m ed, to the g raphene la y er followed by heating and pressing the graphene la y er, wherein, in the step of forming a nanopattern in the graphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo r ed on the polymer substrate under the graphene layer. Currently amended
(Currently Amended) A patternin g method of a g raphene, comprising: a step of forming a graphene la y er on a poly m er substrate; and a step of forming a nanopattern in the g raphene la y er by h o t embossing imprinting, wherein the ste p of formin g a nano p attern in the grap hene la v er includes contacting a roll-to-roll hot mold, in which a nano p attern is fo nn ed, to the g raphene la v er followed by heating and p ressing the arao hene la ver, wherein, in the step of forming a nanopattern in the g raphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the roll-to-roll hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo rm ed on the polymer substrate under the graphene layer. Currently amended
(Original) The patterning method of Claim i, wherein the step of fo rm ing a graphene l ayer on the polymer substrate includes transferring a graphene sheet f o rmed by chemical vapor deposition to the polymer substrate. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
A graphene patterning process using hot embossing imprinting was demonstrated. A hot mold was positioned on graphene, pressure was applied, and a pattern was formed. Resistance measurements confirmed electrical cleavage: non-patterned graphene showed 209.8 Ω; graphene measured across a traversing pattern (with the pattern between contacts) showed infinite resistance (no current flow, measured as 0 Ω reading interpreted as open circuit); graphene measured along the pattern direction showed 124.7 Ω, confirming electrical isolation across the patterned region.
Layer stacks claimed or described, ordered top of device to substrate.
display device with graphene nanopattern
Materials described outside the worked examples.
polymer substrate
polydimethylsiloxane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 209.8 Ω | graphene |
Fet Resistance |
Related documents with shared materials, methods, properties, or citations.
METHOD OF MANUFACTURING GRAPHENE, CARBON NANOTUBES, FULLERENE, GRAPHITE OR A COMBINATION THEREOF HAVING A POSITION SPECIFICALLY REGULATED RESISTANCE
NEURONAL SCAFFOLD-WATER SOLUBLE GRAPHENE FOR TREATMENT OF SEVERED SPINAL CORDS AND NEURONAL REPAIR
Patent
Atlas literature
Patent
US 9,966,531Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 schematically illustrates a patterning method of graphene using a roll- to-roll hot mold in accordance with an example embodiment of the present …
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
FIG. 4 provides photos showing a patterning method of graphene in accordance with an example of the present disclosure. BEST MODE FOR CARRY I NG OUT THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterning method of a graphene, comprising: a step of for m ing a graphene layer on a polymer substrate; and a step of forming a nanopattern in the g raphene layer by hot embossing i m printing, wherein, in the step of formin g a nano p attern in the g raphene. the ra hene la y er is cleaved, and the cleaved grap hene is present on each of a protrusion and a recessed portion of the nano p atte rn formed on the polym er substrate under the gra hene later. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the g raphene layer by hot embossing imprinting includes contacting a hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the step of forming a nanopattern in the graphene layer includes contacting a roll-to-roll hot mold, in which a nanopattern is formed, to the graphene layer followed by heating and pressing the graphene layer. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a member selected from the group consisting of polyarylate, polyethylene terephthalate, polybutylene terephthalate, polysilane, polysiloxane, polysilazane, polyethylene, polycarbosilane, polyacrylate, polymethacrylate, polymethylacrylate, poly(met h ylmethacrylate), polyethylacrylate, cyclic olefin copolymer, poly(ethyl methacrylate), cyclic olefin polymer, polypropylene, polyimide, polystyrene, polyvinyl chloride, polyacetal, polyether ether ketone, polyester sulfone, polytetra f luoroethylene, polyvinylidene fluoride, perfluoroalkyl polymer, and combinations thereof. Currently amended
The patterning method of Claim 1, wherein the polymer substrate includes a thermosetting polymer. Original
The patterning method of Claim 1, wherein the polymer substrate is fo rm ed on a support member. Currently amended
A graphene nanopattern formed by the method of Claim 1. Withdrawn
A patterning method of a grap hene, comprising: a step of forming a graphene la y er on a polymer substrate; and a step of fo rming a nanopattern in the graphene la y er by hot embossing imprinting, wherein the step of forming a nanopattern on the in the g raphene layer by hot embossing im p rinting includes contacting a hot mold, in which a nano p atte rn is for m ed, to the g raphene la y er followed by heating and pressing the graphene la y er, wherein, in the step of forming a nanopattern in the graphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo r ed on the polymer substrate under the graphene layer. Currently amended
(Currently Amended) A patternin g method of a g raphene, comprising: a step of forming a graphene la y er on a poly m er substrate; and a step of forming a nanopattern in the g raphene la y er by h o t embossing imprinting, wherein the ste p of formin g a nano p attern in the grap hene la v er includes contacting a roll-to-roll hot mold, in which a nano p attern is fo nn ed, to the g raphene la v er followed by heating and p ressing the arao hene la ver, wherein, in the step of forming a nanopattern in the g raphene layer, the graphene layer is cleaved by a protrusion of the nanopattern fo rm ed on the roll-to-roll hot mold contacted to the graphene layer, and the cleaved graphene is present on each of the protrusion and a recessed portion of the nanopattern fo rm ed on the polymer substrate under the graphene layer. Currently amended
(Original) The patterning method of Claim i, wherein the step of fo rm ing a graphene l ayer on the polymer substrate includes transferring a graphene sheet f o rmed by chemical vapor deposition to the polymer substrate. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
A graphene patterning process using hot embossing imprinting was demonstrated. A hot mold was positioned on graphene, pressure was applied, and a pattern was formed. Resistance measurements confirmed electrical cleavage: non-patterned graphene showed 209.8 Ω; graphene measured across a traversing pattern (with the pattern between contacts) showed infinite resistance (no current flow, measured as 0 Ω reading interpreted as open circuit); graphene measured along the pattern direction showed 124.7 Ω, confirming electrical isolation across the patterned region.
Layer stacks claimed or described, ordered top of device to substrate.
display device with graphene nanopattern
Materials described outside the worked examples.
polymer substrate
polydimethylsiloxane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 schematically 13 show cases where a resistance of the graphene on which a linear pattern traversing the graphene is formed is measured using a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Resistance | 209.8 Ω | graphene |
Fet Resistance |
Related documents with shared materials, methods, properties, or citations.
METHOD OF MANUFACTURING GRAPHENE, CARBON NANOTUBES, FULLERENE, GRAPHITE OR A COMBINATION THEREOF HAVING A POSITION SPECIFICALLY REGULATED RESISTANCE
NEURONAL SCAFFOLD-WATER SOLUBLE GRAPHENE FOR TREATMENT OF SEVERED SPINAL CORDS AND NEURONAL REPAIR
polyimide
support member (silicon wafer, glass, quartz, or metal)
| 124.7 Ω |
graphene |
polyimide
support member (silicon wafer, glass, quartz, or metal)
| 124.7 Ω |
graphene |
polyimide
support member (silicon wafer, glass, quartz, or metal)
| 124.7 Ω |
graphene |
polyimide
support member (silicon wafer, glass, quartz, or metal)
| 124.7 Ω |
graphene |