Patent
US 9,122,165A METHOD OF MANUFACTURING GRAPHENE, CARBON NANOTUBES, FULLERENE, GRAPHITE OR A COMBINATION THEREOF HAVING A POSITION-SPECIFIC REGULATED RESISTANCE
Jeo-young Shim
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,122,165Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
FIG 2 is a diagram of a perspective view of a structure E of
FIG 3 is a diagram that illustrates the structure E of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of claim 1, wherein the electron beam is irradiated onto only a portion of the structure, and an area of the structure where the electron beam is irradiated has an electrical resistance that is increased compared to an area where the electron beam is not irradiated.
The method of claim 1, wherein the electrical resistance of an area where the electron beam is irradiated is at least 50 times greater than the electrical resistance of an area where the electron beam is not irradiated.
The method of claim 1, wherein the metal-containing material is an insulating material.
The graphene, carbon nanotubes, fullerene, wherein the graphene, carbon nanotubes, f u llerene, graphene nanoribbon. Page 4 of 8 or combination thereof manufactured by the graphite, or combination thereof of claim 4 81 9, graphite, or combination thereof comprises a
The method of claim 1, wherein the metal-containing material is a metal oxide.
The method of claim 1, wherein the metal oxide is A 1 203.
The method of claim 1, wherein a thickness of the metal-containing material is in a range of about 0.1 nm to about 1000 nm. Page 2 of 8 Application No. 14/050,053 Reply to Office Action
The method of claim 1, wherein the metal-containing material is deposited by filament deposition, E -beam evaporation, sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (C V D), or a combination thereof.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam mask.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam resist or without the electron beam resist.
The method of claim 10, wherein the substrate is silicon, a silicon oxide, a silicon nitride (Si₃N₄), A 1 203, TiO2, sapphire, or a combination thereof.
The method of claim 1, wherein the graphene, carbon nanotubes, fullerene, graphite, or combination thereof is suspended and not supported by a substrate.
The method of claim 1 further comprising disposing the graphene, carbon nanotubes, fullerene, graphite, or combination thereof on a substrate.
The method of claim 12, wherein the substrate is an insulating material.
The method of claim 1, wherein the metal-containing material is separated from the graphene, carbon nanotubes, fullerene, graphite, or combination thereof after the irradiating.
The method of claim 1 further comprising, after irradiating the electron beam onto the structure, removing at least part of the structure where the electron beam is irradiated.
The method of claim 1, wherein the electron beam is irradiated on only a portion of the structure, and the method further comprises e empmise forming a source electrode and a drain electrode opposite each other relative to the graphene, carbon nanotubes, fullerene, graphite, or combination thereof, and in contact with the graphene, carbon nanotubes, fullerene, graphite, or combination thereof; and Page 3 of 8 Application No. 14/050,053 Reply to Office Action forming a gate electrode on an area of the structure where the electron beam is not irradiated to provide a field effect transistor (FET). currently amended
canceled
Graphene, carbon nanotubes, fullerene, graphite, method of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET)
Materials described outside the worked examples.
graphene, carbon nanotubes, fullerene, or graphite
metal-containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical resistance ratio irradiated vs non-irradiated area | ≥ 50 | graphene, carbon nanotubes, fullerene, or graphite |
electrical resistance ratio irradiated vs non-irradiated area (description range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,122,165Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
FIG 2 is a diagram of a perspective view of a structure E of
FIG 3 is a diagram that illustrates the structure E of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of claim 1, wherein the electron beam is irradiated onto only a portion of the structure, and an area of the structure where the electron beam is irradiated has an electrical resistance that is increased compared to an area where the electron beam is not irradiated.
The method of claim 1, wherein the electrical resistance of an area where the electron beam is irradiated is at least 50 times greater than the electrical resistance of an area where the electron beam is not irradiated.
The method of claim 1, wherein the metal-containing material is an insulating material.
The graphene, carbon nanotubes, fullerene, wherein the graphene, carbon nanotubes, f u llerene, graphene nanoribbon. Page 4 of 8 or combination thereof manufactured by the graphite, or combination thereof of claim 4 81 9, graphite, or combination thereof comprises a
The method of claim 1, wherein the metal-containing material is a metal oxide.
The method of claim 1, wherein the metal oxide is A 1 203.
The method of claim 1, wherein a thickness of the metal-containing material is in a range of about 0.1 nm to about 1000 nm. Page 2 of 8 Application No. 14/050,053 Reply to Office Action
The method of claim 1, wherein the metal-containing material is deposited by filament deposition, E -beam evaporation, sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (C V D), or a combination thereof.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam mask.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam resist or without the electron beam resist.
The method of claim 10, wherein the substrate is silicon, a silicon oxide, a silicon nitride (Si₃N₄), A 1 203, TiO2, sapphire, or a combination thereof.
The method of claim 1, wherein the graphene, carbon nanotubes, fullerene, graphite, or combination thereof is suspended and not supported by a substrate.
The method of claim 1 further comprising disposing the graphene, carbon nanotubes, fullerene, graphite, or combination thereof on a substrate.
The method of claim 12, wherein the substrate is an insulating material.
The method of claim 1, wherein the metal-containing material is separated from the graphene, carbon nanotubes, fullerene, graphite, or combination thereof after the irradiating.
The method of claim 1 further comprising, after irradiating the electron beam onto the structure, removing at least part of the structure where the electron beam is irradiated.
The method of claim 1, wherein the electron beam is irradiated on only a portion of the structure, and the method further comprises e empmise forming a source electrode and a drain electrode opposite each other relative to the graphene, carbon nanotubes, fullerene, graphite, or combination thereof, and in contact with the graphene, carbon nanotubes, fullerene, graphite, or combination thereof; and Page 3 of 8 Application No. 14/050,053 Reply to Office Action forming a gate electrode on an area of the structure where the electron beam is not irradiated to provide a field effect transistor (FET). currently amended
canceled
Graphene, carbon nanotubes, fullerene, graphite, method of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET)
Materials described outside the worked examples.
graphene, carbon nanotubes, fullerene, or graphite
metal-containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical resistance ratio irradiated vs non-irradiated area | ≥ 50 | graphene, carbon nanotubes, fullerene, or graphite |
electrical resistance ratio irradiated vs non-irradiated area (description range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,122,165Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
FIG 2 is a diagram of a perspective view of a structure E of
FIG 3 is a diagram that illustrates the structure E of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of claim 1, wherein the electron beam is irradiated onto only a portion of the structure, and an area of the structure where the electron beam is irradiated has an electrical resistance that is increased compared to an area where the electron beam is not irradiated.
The method of claim 1, wherein the electrical resistance of an area where the electron beam is irradiated is at least 50 times greater than the electrical resistance of an area where the electron beam is not irradiated.
The method of claim 1, wherein the metal-containing material is an insulating material.
The graphene, carbon nanotubes, fullerene, wherein the graphene, carbon nanotubes, f u llerene, graphene nanoribbon. Page 4 of 8 or combination thereof manufactured by the graphite, or combination thereof of claim 4 81 9, graphite, or combination thereof comprises a
The method of claim 1, wherein the metal-containing material is a metal oxide.
The method of claim 1, wherein the metal oxide is A 1 203.
The method of claim 1, wherein a thickness of the metal-containing material is in a range of about 0.1 nm to about 1000 nm. Page 2 of 8 Application No. 14/050,053 Reply to Office Action
The method of claim 1, wherein the metal-containing material is deposited by filament deposition, E -beam evaporation, sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (C V D), or a combination thereof.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam mask.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam resist or without the electron beam resist.
The method of claim 10, wherein the substrate is silicon, a silicon oxide, a silicon nitride (Si₃N₄), A 1 203, TiO2, sapphire, or a combination thereof.
The method of claim 1, wherein the graphene, carbon nanotubes, fullerene, graphite, or combination thereof is suspended and not supported by a substrate.
The method of claim 1 further comprising disposing the graphene, carbon nanotubes, fullerene, graphite, or combination thereof on a substrate.
The method of claim 12, wherein the substrate is an insulating material.
The method of claim 1, wherein the metal-containing material is separated from the graphene, carbon nanotubes, fullerene, graphite, or combination thereof after the irradiating.
The method of claim 1 further comprising, after irradiating the electron beam onto the structure, removing at least part of the structure where the electron beam is irradiated.
The method of claim 1, wherein the electron beam is irradiated on only a portion of the structure, and the method further comprises e empmise forming a source electrode and a drain electrode opposite each other relative to the graphene, carbon nanotubes, fullerene, graphite, or combination thereof, and in contact with the graphene, carbon nanotubes, fullerene, graphite, or combination thereof; and Page 3 of 8 Application No. 14/050,053 Reply to Office Action forming a gate electrode on an area of the structure where the electron beam is not irradiated to provide a field effect transistor (FET). currently amended
canceled
Graphene, carbon nanotubes, fullerene, graphite, method of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET)
Materials described outside the worked examples.
graphene, carbon nanotubes, fullerene, or graphite
metal-containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical resistance ratio irradiated vs non-irradiated area | ≥ 50 | graphene, carbon nanotubes, fullerene, or graphite |
electrical resistance ratio irradiated vs non-irradiated area (description range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,122,165Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
FIG 2 is a diagram of a perspective view of a structure E of
FIG 3 is a diagram that illustrates the structure E of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The method of claim 1, wherein the electron beam is irradiated onto only a portion of the structure, and an area of the structure where the electron beam is irradiated has an electrical resistance that is increased compared to an area where the electron beam is not irradiated.
The method of claim 1, wherein the electrical resistance of an area where the electron beam is irradiated is at least 50 times greater than the electrical resistance of an area where the electron beam is not irradiated.
The method of claim 1, wherein the metal-containing material is an insulating material.
The graphene, carbon nanotubes, fullerene, wherein the graphene, carbon nanotubes, f u llerene, graphene nanoribbon. Page 4 of 8 or combination thereof manufactured by the graphite, or combination thereof of claim 4 81 9, graphite, or combination thereof comprises a
The method of claim 1, wherein the metal-containing material is a metal oxide.
The method of claim 1, wherein the metal oxide is A 1 203.
The method of claim 1, wherein a thickness of the metal-containing material is in a range of about 0.1 nm to about 1000 nm. Page 2 of 8 Application No. 14/050,053 Reply to Office Action
The method of claim 1, wherein the metal-containing material is deposited by filament deposition, E -beam evaporation, sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (C V D), or a combination thereof.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam mask.
The method of claim 1, wherein the electron beam is irradiated onto the structure in the presence of an electron beam resist or without the electron beam resist.
The method of claim 10, wherein the substrate is silicon, a silicon oxide, a silicon nitride (Si₃N₄), A 1 203, TiO2, sapphire, or a combination thereof.
The method of claim 1, wherein the graphene, carbon nanotubes, fullerene, graphite, or combination thereof is suspended and not supported by a substrate.
The method of claim 1 further comprising disposing the graphene, carbon nanotubes, fullerene, graphite, or combination thereof on a substrate.
The method of claim 12, wherein the substrate is an insulating material.
The method of claim 1, wherein the metal-containing material is separated from the graphene, carbon nanotubes, fullerene, graphite, or combination thereof after the irradiating.
The method of claim 1 further comprising, after irradiating the electron beam onto the structure, removing at least part of the structure where the electron beam is irradiated.
The method of claim 1, wherein the electron beam is irradiated on only a portion of the structure, and the method further comprises e empmise forming a source electrode and a drain electrode opposite each other relative to the graphene, carbon nanotubes, fullerene, graphite, or combination thereof, and in contact with the graphene, carbon nanotubes, fullerene, graphite, or combination thereof; and Page 3 of 8 Application No. 14/050,053 Reply to Office Action forming a gate electrode on an area of the structure where the electron beam is not irradiated to provide a field effect transistor (FET). currently amended
canceled
Graphene, carbon nanotubes, fullerene, graphite, method of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET)
Materials described outside the worked examples.
graphene, carbon nanotubes, fullerene, or graphite
metal-containing material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a diagram that illustrates a process of manufactu ri ng a transistor including graphene having a position-specific regulated elect ri c resistance by irradiating an electron beam,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical resistance ratio irradiated vs non-irradiated area | ≥ 50 | graphene, carbon nanotubes, fullerene, or graphite |
electrical resistance ratio irradiated vs non-irradiated area (description range) |
Related documents with shared materials, methods, properties, or citations.
Al₂O₃
insulating substrate material
silicon, silicon oxide, silicon nitride, Al₂O3, TiO2, or sapphire
graphene nanoribbon
metal-containing material (Al, Ni, Fe, Co, Ti, Cr or combination thereof)
Al₂O3, NiO, Ni₂O3, Fe₂O3, Fe₃O4, CoO, Co₂O3, Co₃O4, TiO2, TiO, Ti₂O3, CrO, Cr₂O3, CrO₂ (insulating metal oxides)
graphene, carbon nanotubes, fullerene, or graphite |
Thickness | 1–1000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 1–800 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–800 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–800 nm | — |
Pressure | 20–300 pA | — |
Pressure | 20–200 pA | — |
Pressure | 20–100 pA | — |
Pressure | 20–80 pA | — |
Pressure | 20–60 pA | — |
Pressure | 50–300 pA | — |
Pressure | 100–300 pA | — |
Pressure | 150–300 pA | — |
Pressure | 10–200 pA | — |
Thickness | 0.1–1000 nm | — |
Al₂O₃
insulating substrate material
silicon, silicon oxide, silicon nitride, Al₂O3, TiO2, or sapphire
graphene nanoribbon
metal-containing material (Al, Ni, Fe, Co, Ti, Cr or combination thereof)
Al₂O3, NiO, Ni₂O3, Fe₂O3, Fe₃O4, CoO, Co₂O3, Co₃O4, TiO2, TiO, Ti₂O3, CrO, Cr₂O3, CrO₂ (insulating metal oxides)
graphene, carbon nanotubes, fullerene, or graphite |
Thickness | 1–1000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 1–800 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–800 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–800 nm | — |
Pressure | 20–300 pA | — |
Pressure | 20–200 pA | — |
Pressure | 20–100 pA | — |
Pressure | 20–80 pA | — |
Pressure | 20–60 pA | — |
Pressure | 50–300 pA | — |
Pressure | 100–300 pA | — |
Pressure | 150–300 pA | — |
Pressure | 10–200 pA | — |
Thickness | 0.1–1000 nm | — |
Al₂O₃
insulating substrate material
silicon, silicon oxide, silicon nitride, Al₂O3, TiO2, or sapphire
graphene nanoribbon
metal-containing material (Al, Ni, Fe, Co, Ti, Cr or combination thereof)
Al₂O3, NiO, Ni₂O3, Fe₂O3, Fe₃O4, CoO, Co₂O3, Co₃O4, TiO2, TiO, Ti₂O3, CrO, Cr₂O3, CrO₂ (insulating metal oxides)
graphene, carbon nanotubes, fullerene, or graphite |
Thickness | 1–1000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 1–800 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–800 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–800 nm | — |
Pressure | 20–300 pA | — |
Pressure | 20–200 pA | — |
Pressure | 20–100 pA | — |
Pressure | 20–80 pA | — |
Pressure | 20–60 pA | — |
Pressure | 50–300 pA | — |
Pressure | 100–300 pA | — |
Pressure | 150–300 pA | — |
Pressure | 10–200 pA | — |
Thickness | 0.1–1000 nm | — |
Al₂O₃
insulating substrate material
silicon, silicon oxide, silicon nitride, Al₂O3, TiO2, or sapphire
graphene nanoribbon
metal-containing material (Al, Ni, Fe, Co, Ti, Cr or combination thereof)
Al₂O3, NiO, Ni₂O3, Fe₂O3, Fe₃O4, CoO, Co₂O3, Co₃O4, TiO2, TiO, Ti₂O3, CrO, Cr₂O3, CrO₂ (insulating metal oxides)
graphene, carbon nanotubes, fullerene, or graphite |
Thickness | 1–1000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 500–1000 nm | — |
Thickness | 1–800 nm | — |
Thickness | 1–500 nm | — |
Thickness | 1–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 10–800 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–800 nm | — |
Pressure | 20–300 pA | — |
Pressure | 20–200 pA | — |
Pressure | 20–100 pA | — |
Pressure | 20–80 pA | — |
Pressure | 20–60 pA | — |
Pressure | 50–300 pA | — |
Pressure | 100–300 pA | — |
Pressure | 150–300 pA | — |
Pressure | 10–200 pA | — |
Thickness | 0.1–1000 nm | — |