Patent
US 8,932,673OF THE INVENTION
Vikram Patil
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,932,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A, 1 B, and 1 C illustrate high-quality Graphene growth using a seed layer deposited onto the substrate. [0011]
FIG. 2 illustrates a cross-sectional view of the substrate with a seed layer of mechanically exfoliated high-quality Graphene. [0012]
FIG. 3 illustrates a cross-sectional view of the catalyst metal layer deposited onto the substrate with the seed layer. [0013]
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
FIG. 5A illustrates a cross-sectional view of the substrate and the catalyst metal layer showing formation of nucleation sites around the seed layer underneath …
FIG. 6 illustrates a cross-sectional view of the substrate with newly formed large- area, high-quality Graphene underneath the catalyst metal layer and a clean …
FIG. 7 illustrates a cross-sectional view of the substrate with large-area Graphene after etching away the catalyst metal layer. [0018]
FIG. 8B shows a 300nm thick silicon dioxide substrate with a uniform layer of Graphene grown over a large area of the substrate (described in
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
FIG. 10 illustrates the cross-sectional view of a substrate with an exfoliated Graphene seed layer, which are both placed next to a catalyst metal layer inside …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: The method according to claim 1, wherein said substrate is approximately 90 nm⁻³²⁰ nm thick.
: The method according to claim 1, wherein said substrate comprises at least one of silicon dioxide, SiC, Si 3 N 4, quartz, silicon, sapphire, and ST-cut quartz.
: The method according to claim 1, wherein said substrate comprises silicon dioxide.
: The method according to claim 1, wherein said Graphene seed layer deposition is performed using mechanical exfoliation or chemical vapor deposition.
: The method according to claim 1, wherein said Graphene seed layer comprises one or more layers of Graphene.
: The method according to claim 1, wherein said catalyst metal layer is selected from the group consisting of Copper, Nickel, Cobalt, Rhodium, Ruthenium, and Platinum.
: The method according to claim 1, wherein said catalyst metal layer comprises Cop- per.
: The method according to claim 1, wherein said catalyst metal layer is approximate- ly 100 nm⁻⁸⁰⁰ nm thick.
: The method according to claim 1, wherein said Carbon atoms are introduced though a chemical vapor deposition process.
: The method according to claim 1, wherein a source of said Carbon atoms is a hy- drocarbon gas.
: The method according to claim 1, wherein a source of said Carbon atoms is a me- -2- Serial No. 13/456,894 Att y. Docket: 2500.407 1 thane gas.
: The method according to claim 1, wherein said Carbon atoms are introduced though a solid Carbon source.
: The method according to claim 1, further comprising the step of etching the top surface of said catalyst metal layer after introduction of said Carbon atoms.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of carbon atoms; providing depositing a catalyst metal layer that is separate from said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate, wherein said Graphene seed layer deposition is performed using mechanical exfoliation; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising a substrate; depositing a Graphene seed metal layer on said substrate and said Graphene Graphene seed layer, wherein said Carbon atoms
: The method according to claim 19, wherein methacrylate). -3-comprising: providing a base layer layer on said substrate; depositing a catalyst seed layer; and introducing Carbon atoms to said are introduced through a solid Carbon source. said solid Carbon source is poly(methyl
Materials described outside the worked examples.
Graphene seed layer
C
substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,932,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A, 1 B, and 1 C illustrate high-quality Graphene growth using a seed layer deposited onto the substrate. [0011]
FIG. 2 illustrates a cross-sectional view of the substrate with a seed layer of mechanically exfoliated high-quality Graphene. [0012]
FIG. 3 illustrates a cross-sectional view of the catalyst metal layer deposited onto the substrate with the seed layer. [0013]
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
FIG. 5A illustrates a cross-sectional view of the substrate and the catalyst metal layer showing formation of nucleation sites around the seed layer underneath …
FIG. 6 illustrates a cross-sectional view of the substrate with newly formed large- area, high-quality Graphene underneath the catalyst metal layer and a clean …
FIG. 7 illustrates a cross-sectional view of the substrate with large-area Graphene after etching away the catalyst metal layer. [0018]
FIG. 8B shows a 300nm thick silicon dioxide substrate with a uniform layer of Graphene grown over a large area of the substrate (described in
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
FIG. 10 illustrates the cross-sectional view of a substrate with an exfoliated Graphene seed layer, which are both placed next to a catalyst metal layer inside …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: The method according to claim 1, wherein said substrate is approximately 90 nm⁻³²⁰ nm thick.
: The method according to claim 1, wherein said substrate comprises at least one of silicon dioxide, SiC, Si 3 N 4, quartz, silicon, sapphire, and ST-cut quartz.
: The method according to claim 1, wherein said substrate comprises silicon dioxide.
: The method according to claim 1, wherein said Graphene seed layer deposition is performed using mechanical exfoliation or chemical vapor deposition.
: The method according to claim 1, wherein said Graphene seed layer comprises one or more layers of Graphene.
: The method according to claim 1, wherein said catalyst metal layer is selected from the group consisting of Copper, Nickel, Cobalt, Rhodium, Ruthenium, and Platinum.
: The method according to claim 1, wherein said catalyst metal layer comprises Cop- per.
: The method according to claim 1, wherein said catalyst metal layer is approximate- ly 100 nm⁻⁸⁰⁰ nm thick.
: The method according to claim 1, wherein said Carbon atoms are introduced though a chemical vapor deposition process.
: The method according to claim 1, wherein a source of said Carbon atoms is a hy- drocarbon gas.
: The method according to claim 1, wherein a source of said Carbon atoms is a me- -2- Serial No. 13/456,894 Att y. Docket: 2500.407 1 thane gas.
: The method according to claim 1, wherein said Carbon atoms are introduced though a solid Carbon source.
: The method according to claim 1, further comprising the step of etching the top surface of said catalyst metal layer after introduction of said Carbon atoms.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of carbon atoms; providing depositing a catalyst metal layer that is separate from said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate, wherein said Graphene seed layer deposition is performed using mechanical exfoliation; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising a substrate; depositing a Graphene seed metal layer on said substrate and said Graphene Graphene seed layer, wherein said Carbon atoms
: The method according to claim 19, wherein methacrylate). -3-comprising: providing a base layer layer on said substrate; depositing a catalyst seed layer; and introducing Carbon atoms to said are introduced through a solid Carbon source. said solid Carbon source is poly(methyl
Materials described outside the worked examples.
Graphene seed layer
C
substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,932,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A, 1 B, and 1 C illustrate high-quality Graphene growth using a seed layer deposited onto the substrate. [0011]
FIG. 2 illustrates a cross-sectional view of the substrate with a seed layer of mechanically exfoliated high-quality Graphene. [0012]
FIG. 3 illustrates a cross-sectional view of the catalyst metal layer deposited onto the substrate with the seed layer. [0013]
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
FIG. 5A illustrates a cross-sectional view of the substrate and the catalyst metal layer showing formation of nucleation sites around the seed layer underneath …
FIG. 6 illustrates a cross-sectional view of the substrate with newly formed large- area, high-quality Graphene underneath the catalyst metal layer and a clean …
FIG. 7 illustrates a cross-sectional view of the substrate with large-area Graphene after etching away the catalyst metal layer. [0018]
FIG. 8B shows a 300nm thick silicon dioxide substrate with a uniform layer of Graphene grown over a large area of the substrate (described in
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
FIG. 10 illustrates the cross-sectional view of a substrate with an exfoliated Graphene seed layer, which are both placed next to a catalyst metal layer inside …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: The method according to claim 1, wherein said substrate is approximately 90 nm⁻³²⁰ nm thick.
: The method according to claim 1, wherein said substrate comprises at least one of silicon dioxide, SiC, Si 3 N 4, quartz, silicon, sapphire, and ST-cut quartz.
: The method according to claim 1, wherein said substrate comprises silicon dioxide.
: The method according to claim 1, wherein said Graphene seed layer deposition is performed using mechanical exfoliation or chemical vapor deposition.
: The method according to claim 1, wherein said Graphene seed layer comprises one or more layers of Graphene.
: The method according to claim 1, wherein said catalyst metal layer is selected from the group consisting of Copper, Nickel, Cobalt, Rhodium, Ruthenium, and Platinum.
: The method according to claim 1, wherein said catalyst metal layer comprises Cop- per.
: The method according to claim 1, wherein said catalyst metal layer is approximate- ly 100 nm⁻⁸⁰⁰ nm thick.
: The method according to claim 1, wherein said Carbon atoms are introduced though a chemical vapor deposition process.
: The method according to claim 1, wherein a source of said Carbon atoms is a hy- drocarbon gas.
: The method according to claim 1, wherein a source of said Carbon atoms is a me- -2- Serial No. 13/456,894 Att y. Docket: 2500.407 1 thane gas.
: The method according to claim 1, wherein said Carbon atoms are introduced though a solid Carbon source.
: The method according to claim 1, further comprising the step of etching the top surface of said catalyst metal layer after introduction of said Carbon atoms.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of carbon atoms; providing depositing a catalyst metal layer that is separate from said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate, wherein said Graphene seed layer deposition is performed using mechanical exfoliation; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising a substrate; depositing a Graphene seed metal layer on said substrate and said Graphene Graphene seed layer, wherein said Carbon atoms
: The method according to claim 19, wherein methacrylate). -3-comprising: providing a base layer layer on said substrate; depositing a catalyst seed layer; and introducing Carbon atoms to said are introduced through a solid Carbon source. said solid Carbon source is poly(methyl
Materials described outside the worked examples.
Graphene seed layer
C
substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,932,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A, 1 B, and 1 C illustrate high-quality Graphene growth using a seed layer deposited onto the substrate. [0011]
FIG. 2 illustrates a cross-sectional view of the substrate with a seed layer of mechanically exfoliated high-quality Graphene. [0012]
FIG. 3 illustrates a cross-sectional view of the catalyst metal layer deposited onto the substrate with the seed layer. [0013]
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
FIG. 5A illustrates a cross-sectional view of the substrate and the catalyst metal layer showing formation of nucleation sites around the seed layer underneath …
FIG. 6 illustrates a cross-sectional view of the substrate with newly formed large- area, high-quality Graphene underneath the catalyst metal layer and a clean …
FIG. 7 illustrates a cross-sectional view of the substrate with large-area Graphene after etching away the catalyst metal layer. [0018]
FIG. 8B shows a 300nm thick silicon dioxide substrate with a uniform layer of Graphene grown over a large area of the substrate (described in
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
FIG. 10 illustrates the cross-sectional view of a substrate with an exfoliated Graphene seed layer, which are both placed next to a catalyst metal layer inside …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of Carbon atoms; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: The method according to claim 1, wherein said substrate is approximately 90 nm⁻³²⁰ nm thick.
: The method according to claim 1, wherein said substrate comprises at least one of silicon dioxide, SiC, Si 3 N 4, quartz, silicon, sapphire, and ST-cut quartz.
: The method according to claim 1, wherein said substrate comprises silicon dioxide.
: The method according to claim 1, wherein said Graphene seed layer deposition is performed using mechanical exfoliation or chemical vapor deposition.
: The method according to claim 1, wherein said Graphene seed layer comprises one or more layers of Graphene.
: The method according to claim 1, wherein said catalyst metal layer is selected from the group consisting of Copper, Nickel, Cobalt, Rhodium, Ruthenium, and Platinum.
: The method according to claim 1, wherein said catalyst metal layer comprises Cop- per.
: The method according to claim 1, wherein said catalyst metal layer is approximate- ly 100 nm⁻⁸⁰⁰ nm thick.
: The method according to claim 1, wherein said Carbon atoms are introduced though a chemical vapor deposition process.
: The method according to claim 1, wherein a source of said Carbon atoms is a hy- drocarbon gas.
: The method according to claim 1, wherein a source of said Carbon atoms is a me- -2- Serial No. 13/456,894 Att y. Docket: 2500.407 1 thane gas.
: The method according to claim 1, wherein said Carbon atoms are introduced though a solid Carbon source.
: The method according to claim 1, further comprising the step of etching the top surface of said catalyst metal layer after introduction of said Carbon atoms.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate prior to introduction of carbon atoms; providing depositing a catalyst metal layer that is separate from said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising: providing a base layer comprising a substrate; depositing a Graphene seed layer on said substrate, wherein said Graphene seed layer deposition is performed using mechanical exfoliation; depositing a catalyst metal layer on said substrate and said Graphene seed layer; and introducing Carbon atoms to said Graphene seed layer.
: A method of fabricating Graphene, the method comprising a substrate; depositing a Graphene seed metal layer on said substrate and said Graphene Graphene seed layer, wherein said Carbon atoms
: The method according to claim 19, wherein methacrylate). -3-comprising: providing a base layer layer on said substrate; depositing a catalyst seed layer; and introducing Carbon atoms to said are introduced through a solid Carbon source. said solid Carbon source is poly(methyl
Materials described outside the worked examples.
Graphene seed layer
C
substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 illustrates a cross-sectional view of the substrate and the catalyst metal layer showing the intermediate step of Carbon atom absorption into the …
Related documents with shared materials, methods, properties, or citations.
catalyst metal layer
silicon dioxide
SiO₂
silicon carbide
SiC
silicon nitride
Si₃N₄
quartz
silicon
Si
sapphire
Al₂O₃
ST-cut quartz
Copper
Cu
Nickel
Ni
Cobalt
Co
Rhodium
Rh
Ruthenium
Ru
hydrocarbon gas
methane gas
CH₄
poly(methyl methacrylate)
Platinum
Pt
Hydrogen
H₂
Argon
Ar
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
catalyst metal layer
silicon dioxide
SiO₂
silicon carbide
SiC
silicon nitride
Si₃N₄
quartz
silicon
Si
sapphire
Al₂O₃
ST-cut quartz
Copper
Cu
Nickel
Ni
Cobalt
Co
Rhodium
Rh
Ruthenium
Ru
hydrocarbon gas
methane gas
CH₄
poly(methyl methacrylate)
Platinum
Pt
Hydrogen
H₂
Argon
Ar
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
catalyst metal layer
silicon dioxide
SiO₂
silicon carbide
SiC
silicon nitride
Si₃N₄
quartz
silicon
Si
sapphire
Al₂O₃
ST-cut quartz
Copper
Cu
Nickel
Ni
Cobalt
Co
Rhodium
Rh
Ruthenium
Ru
hydrocarbon gas
methane gas
CH₄
poly(methyl methacrylate)
Platinum
Pt
Hydrogen
H₂
Argon
Ar
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in
catalyst metal layer
silicon dioxide
SiO₂
silicon carbide
SiC
silicon nitride
Si₃N₄
quartz
silicon
Si
sapphire
Al₂O₃
ST-cut quartz
Copper
Cu
Nickel
Ni
Cobalt
Co
Rhodium
Rh
Ruthenium
Ru
hydrocarbon gas
methane gas
CH₄
poly(methyl methacrylate)
Platinum
Pt
Hydrogen
H₂
Argon
Ar
FIG. 9 is the Raman spectrum of the resulting Graphene product shown in