Patent
US 9,061,912GRAPHENE NANORIBBONS AND METHODS OF FABRICATION THEREOF
Yuegang Zhang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,061,912Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a fabrication process for a graphene nanoribbon.
Figures 2A-2C show examples of schematic illustrations of a graphene nanoribbon at various stages in a process of fabricating the graphene nanoribbon.
Figure 3 shows an example of a fabrication process for a device including a graphene nanoribbon.
Figures 4A-4F show examples of schematic illustrations of a device at various stages in a process of fabricating the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1-10. canceled
(Cu rr ently Amended) A method comprising: (a) depositing a catalyst layer on a substrate; (b) depositing a masking layer on the catalyst layer; SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.1.svg 0.15 5.83 Black and white substrate, the structure comprising a portion of the catalyst layer and a portion of the masking layer disposed on the catalyst layer, sidewalls of the catalyst layer being exposed; and SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.2.svg 0.44 5.97 Black and white
The method of claim 11, wherein the catalyst layer is selected from a group consisting of nickel, copper, cobalt, iron, molybdenum, titanium, and tungsten.
The method of claim 11, wherein the catalyst layer comprises nickel.
The method of claim 11, wherein the carbon-containing gas is selected from a group consisting of methane, ethane, ethylene, and acetylene.
(Cu rr ently Amended) The method of claim 11, wherein operation (d) is performed at a temperature that thermally decomposes the carbon-containing gas, and wherein the temperature SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.3.svg 0.15 2.82 Black and white
The method of claim 11, further comprising: after operation (d), removing the portion of the masking layer and the portion of the catalyst layer.
(Cu rr ently Amended) The method of claim 11, wherein a thickness of the catalyst layer deposited on the substrate is about 1 nanometer to 20 nanometers.
The method of claim 11, wherein the substrate comprises silicon.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the masking layer or the substrate.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the catalyst layer other than the sidewalls of the catalyst layer.
The method of claim 11, wherein operation (d) is performed with a plasma enhanced chemical vapor deposition process. -4-
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon on substrate
Materials described outside the worked examples.
catalyst layer
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width (claimed upper bound) | ≤ 20 nm | graphene nanoribbon |
graphene nanoribbon width range (description) | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,061,912Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a fabrication process for a graphene nanoribbon.
Figures 2A-2C show examples of schematic illustrations of a graphene nanoribbon at various stages in a process of fabricating the graphene nanoribbon.
Figure 3 shows an example of a fabrication process for a device including a graphene nanoribbon.
Figures 4A-4F show examples of schematic illustrations of a device at various stages in a process of fabricating the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1-10. canceled
(Cu rr ently Amended) A method comprising: (a) depositing a catalyst layer on a substrate; (b) depositing a masking layer on the catalyst layer; SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.1.svg 0.15 5.83 Black and white substrate, the structure comprising a portion of the catalyst layer and a portion of the masking layer disposed on the catalyst layer, sidewalls of the catalyst layer being exposed; and SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.2.svg 0.44 5.97 Black and white
The method of claim 11, wherein the catalyst layer is selected from a group consisting of nickel, copper, cobalt, iron, molybdenum, titanium, and tungsten.
The method of claim 11, wherein the catalyst layer comprises nickel.
The method of claim 11, wherein the carbon-containing gas is selected from a group consisting of methane, ethane, ethylene, and acetylene.
(Cu rr ently Amended) The method of claim 11, wherein operation (d) is performed at a temperature that thermally decomposes the carbon-containing gas, and wherein the temperature SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.3.svg 0.15 2.82 Black and white
The method of claim 11, further comprising: after operation (d), removing the portion of the masking layer and the portion of the catalyst layer.
(Cu rr ently Amended) The method of claim 11, wherein a thickness of the catalyst layer deposited on the substrate is about 1 nanometer to 20 nanometers.
The method of claim 11, wherein the substrate comprises silicon.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the masking layer or the substrate.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the catalyst layer other than the sidewalls of the catalyst layer.
The method of claim 11, wherein operation (d) is performed with a plasma enhanced chemical vapor deposition process. -4-
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon on substrate
Materials described outside the worked examples.
catalyst layer
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width (claimed upper bound) | ≤ 20 nm | graphene nanoribbon |
graphene nanoribbon width range (description) | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,061,912Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a fabrication process for a graphene nanoribbon.
Figures 2A-2C show examples of schematic illustrations of a graphene nanoribbon at various stages in a process of fabricating the graphene nanoribbon.
Figure 3 shows an example of a fabrication process for a device including a graphene nanoribbon.
Figures 4A-4F show examples of schematic illustrations of a device at various stages in a process of fabricating the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1-10. canceled
(Cu rr ently Amended) A method comprising: (a) depositing a catalyst layer on a substrate; (b) depositing a masking layer on the catalyst layer; SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.1.svg 0.15 5.83 Black and white substrate, the structure comprising a portion of the catalyst layer and a portion of the masking layer disposed on the catalyst layer, sidewalls of the catalyst layer being exposed; and SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.2.svg 0.44 5.97 Black and white
The method of claim 11, wherein the catalyst layer is selected from a group consisting of nickel, copper, cobalt, iron, molybdenum, titanium, and tungsten.
The method of claim 11, wherein the catalyst layer comprises nickel.
The method of claim 11, wherein the carbon-containing gas is selected from a group consisting of methane, ethane, ethylene, and acetylene.
(Cu rr ently Amended) The method of claim 11, wherein operation (d) is performed at a temperature that thermally decomposes the carbon-containing gas, and wherein the temperature SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.3.svg 0.15 2.82 Black and white
The method of claim 11, further comprising: after operation (d), removing the portion of the masking layer and the portion of the catalyst layer.
(Cu rr ently Amended) The method of claim 11, wherein a thickness of the catalyst layer deposited on the substrate is about 1 nanometer to 20 nanometers.
The method of claim 11, wherein the substrate comprises silicon.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the masking layer or the substrate.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the catalyst layer other than the sidewalls of the catalyst layer.
The method of claim 11, wherein operation (d) is performed with a plasma enhanced chemical vapor deposition process. -4-
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon on substrate
Materials described outside the worked examples.
catalyst layer
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width (claimed upper bound) | ≤ 20 nm | graphene nanoribbon |
graphene nanoribbon width range (description) | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,061,912Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a fabrication process for a graphene nanoribbon.
Figures 2A-2C show examples of schematic illustrations of a graphene nanoribbon at various stages in a process of fabricating the graphene nanoribbon.
Figure 3 shows an example of a fabrication process for a device including a graphene nanoribbon.
Figures 4A-4F show examples of schematic illustrations of a device at various stages in a process of fabricating the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1-10. canceled
(Cu rr ently Amended) A method comprising: (a) depositing a catalyst layer on a substrate; (b) depositing a masking layer on the catalyst layer; SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.1.svg 0.15 5.83 Black and white substrate, the structure comprising a portion of the catalyst layer and a portion of the masking layer disposed on the catalyst layer, sidewalls of the catalyst layer being exposed; and SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.2.svg 0.44 5.97 Black and white
The method of claim 11, wherein the catalyst layer is selected from a group consisting of nickel, copper, cobalt, iron, molybdenum, titanium, and tungsten.
The method of claim 11, wherein the catalyst layer comprises nickel.
The method of claim 11, wherein the carbon-containing gas is selected from a group consisting of methane, ethane, ethylene, and acetylene.
(Cu rr ently Amended) The method of claim 11, wherein operation (d) is performed at a temperature that thermally decomposes the carbon-containing gas, and wherein the temperature SVG 13910327.02-13-2015.I₆₃POXBAPXXIFW3.CLM.3.svg 0.15 2.82 Black and white
The method of claim 11, further comprising: after operation (d), removing the portion of the masking layer and the portion of the catalyst layer.
(Cu rr ently Amended) The method of claim 11, wherein a thickness of the catalyst layer deposited on the substrate is about 1 nanometer to 20 nanometers.
The method of claim 11, wherein the substrate comprises silicon.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the masking layer or the substrate.
The method of claim 11, wherein the graphene layer is not formed on surfaces of the catalyst layer other than the sidewalls of the catalyst layer.
The method of claim 11, wherein operation (d) is performed with a plasma enhanced chemical vapor deposition process. -4-
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon on substrate
Materials described outside the worked examples.
catalyst layer
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon width (claimed upper bound) | ≤ 20 nm | graphene nanoribbon |
graphene nanoribbon width range (description) | 1–20 nm |
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
copper
Cu
cobalt
Co
iron
Fe
molybdenum
Mo
titanium
Ti
tungsten
W
methane
CH₄
ethane
C₂H₆
ethylene
C₂H₄
acetylene
C₂H₂
silicon
Si
silicon dioxide
SiO₂
silicon carbide
SiC
catalyst layer thickness (claimed range) | 1–20 nm | catalyst layer |
graphene nanoribbon length (description) | ≥ 40 µm | graphene nanoribbon |
Thickness | 2–500 nm | — |
Temperature | 700–725 °C | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 1 nm | — |
nickel
Ni
copper
Cu
cobalt
Co
iron
Fe
molybdenum
Mo
titanium
Ti
tungsten
W
methane
CH₄
ethane
C₂H₆
ethylene
C₂H₄
acetylene
C₂H₂
silicon
Si
silicon dioxide
SiO₂
silicon carbide
SiC
catalyst layer thickness (claimed range) | 1–20 nm | catalyst layer |
graphene nanoribbon length (description) | ≥ 40 µm | graphene nanoribbon |
Thickness | 2–500 nm | — |
Temperature | 700–725 °C | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 1 nm | — |
nickel
Ni
copper
Cu
cobalt
Co
iron
Fe
molybdenum
Mo
titanium
Ti
tungsten
W
methane
CH₄
ethane
C₂H₆
ethylene
C₂H₄
acetylene
C₂H₂
silicon
Si
silicon dioxide
SiO₂
silicon carbide
SiC
catalyst layer thickness (claimed range) | 1–20 nm | catalyst layer |
graphene nanoribbon length (description) | ≥ 40 µm | graphene nanoribbon |
Thickness | 2–500 nm | — |
Temperature | 700–725 °C | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 1 nm | — |
nickel
Ni
copper
Cu
cobalt
Co
iron
Fe
molybdenum
Mo
titanium
Ti
tungsten
W
methane
CH₄
ethane
C₂H₆
ethylene
C₂H₄
acetylene
C₂H₂
silicon
Si
silicon dioxide
SiO₂
silicon carbide
SiC
catalyst layer thickness (claimed range) | 1–20 nm | catalyst layer |
graphene nanoribbon length (description) | ≥ 40 µm | graphene nanoribbon |
Thickness | 2–500 nm | — |
Temperature | 700–725 °C | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 1 nm | — |