Patent
US 9,230,818OF THE INVENTION
Theodore D. Moustakas
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,230,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A substrate comprising: a first layer, the first surface plane; and a sacrificial layer covering the an essentially planar surface, wherein the first layer etch rate, the sacrificial layer responds to the first ratio of the second etch rate to the first etch rate layer having roughness features deviating from a roughness features, the sacrificial layer having responds to a first etching method at a first etching method at a second etch rate, and the is in the range of 0.2 to 1.2.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is less than 2 times a rms roughness of the surface.
The substrate of claim 48, wherein the first layer is a layer grown on a crystallographic plane.
The substrate of claim 48, wherein the sacrificial layer is a layer which has been applied using spin coating, sputtering, floating, evaporation, melting, stamping, or screen printing.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is at least 100 A greater than a maximum height of the roughness features.
The substrate of claim 48, wherein the sacrificial layer comprises material that is a photoresist selected from AZ5214, AZ₄₃₃ 0 RS, and AZ₄₆₂₀
The substrate of claim 48, wherein the first etching method comprises inductively coupled plasma reactive ion etching.
The substrate of claim [[54]] 57, wherein the I II -nitride material is GaN and the inductively coupled plasma reactive ion etching uses a plasma comprising C l 2, BC l 3, and Ar.
The substarte substrate of claim [[54]] 48, wherein the first layer comprises a I II -nitride material.
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Layer stacks claimed or described, ordered top of device to substrate.
planarized III-nitride substrate
Materials described outside the worked examples.
III-nitride material
sacrificial planarization layer
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A substrate comprising: a first layer, the first surface plane; and a sacrificial layer covering the an essentially planar surface, wherein the first layer etch rate, the sacrificial layer responds to the first ratio of the second etch rate to the first etch rate layer having roughness features deviating from a roughness features, the sacrificial layer having responds to a first etching method at a first etching method at a second etch rate, and the is in the range of 0.2 to 1.2.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is less than 2 times a rms roughness of the surface.
The substrate of claim 48, wherein the first layer is a layer grown on a crystallographic plane.
The substrate of claim 48, wherein the sacrificial layer is a layer which has been applied using spin coating, sputtering, floating, evaporation, melting, stamping, or screen printing.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is at least 100 A greater than a maximum height of the roughness features.
The substrate of claim 48, wherein the sacrificial layer comprises material that is a photoresist selected from AZ5214, AZ₄₃₃ 0 RS, and AZ₄₆₂₀
The substrate of claim 48, wherein the first etching method comprises inductively coupled plasma reactive ion etching.
The substrate of claim [[54]] 57, wherein the I II -nitride material is GaN and the inductively coupled plasma reactive ion etching uses a plasma comprising C l 2, BC l 3, and Ar.
The substarte substrate of claim [[54]] 48, wherein the first layer comprises a I II -nitride material.
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Layer stacks claimed or described, ordered top of device to substrate.
planarized III-nitride substrate
Materials described outside the worked examples.
III-nitride material
sacrificial planarization layer
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A substrate comprising: a first layer, the first surface plane; and a sacrificial layer covering the an essentially planar surface, wherein the first layer etch rate, the sacrificial layer responds to the first ratio of the second etch rate to the first etch rate layer having roughness features deviating from a roughness features, the sacrificial layer having responds to a first etching method at a first etching method at a second etch rate, and the is in the range of 0.2 to 1.2.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is less than 2 times a rms roughness of the surface.
The substrate of claim 48, wherein the first layer is a layer grown on a crystallographic plane.
The substrate of claim 48, wherein the sacrificial layer is a layer which has been applied using spin coating, sputtering, floating, evaporation, melting, stamping, or screen printing.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is at least 100 A greater than a maximum height of the roughness features.
The substrate of claim 48, wherein the sacrificial layer comprises material that is a photoresist selected from AZ5214, AZ₄₃₃ 0 RS, and AZ₄₆₂₀
The substrate of claim 48, wherein the first etching method comprises inductively coupled plasma reactive ion etching.
The substrate of claim [[54]] 57, wherein the I II -nitride material is GaN and the inductively coupled plasma reactive ion etching uses a plasma comprising C l 2, BC l 3, and Ar.
The substarte substrate of claim [[54]] 48, wherein the first layer comprises a I II -nitride material.
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Layer stacks claimed or described, ordered top of device to substrate.
planarized III-nitride substrate
Materials described outside the worked examples.
III-nitride material
sacrificial planarization layer
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A substrate comprising: a first layer, the first surface plane; and a sacrificial layer covering the an essentially planar surface, wherein the first layer etch rate, the sacrificial layer responds to the first ratio of the second etch rate to the first etch rate layer having roughness features deviating from a roughness features, the sacrificial layer having responds to a first etching method at a first etching method at a second etch rate, and the is in the range of 0.2 to 1.2.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is less than 2 times a rms roughness of the surface.
The substrate of claim 48, wherein the first layer is a layer grown on a crystallographic plane.
The substrate of claim 48, wherein the sacrificial layer is a layer which has been applied using spin coating, sputtering, floating, evaporation, melting, stamping, or screen printing.
The substrate of claim 48, wherein a mean thickness of the sacrificial layer is at least 100 A greater than a maximum height of the roughness features.
The substrate of claim 48, wherein the sacrificial layer comprises material that is a photoresist selected from AZ5214, AZ₄₃₃ 0 RS, and AZ₄₆₂₀
The substrate of claim 48, wherein the first etching method comprises inductively coupled plasma reactive ion etching.
The substrate of claim [[54]] 57, wherein the I II -nitride material is GaN and the inductively coupled plasma reactive ion etching uses a plasma comprising C l 2, BC l 3, and Ar.
The substarte substrate of claim [[54]] 48, wherein the first layer comprises a I II -nitride material.
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canceled
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Layer stacks claimed or described, ordered top of device to substrate.
planarized III-nitride substrate
Materials described outside the worked examples.
III-nitride material
sacrificial planarization layer
photoresist
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GaN
AlN
InN
AlGaN
InGaN
AlInGaN
AZ₅₂₁₄ photoresist
AZ₄₃₃₀ RS photoresist
AZ₄₆₂₀ photoresist
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 10 nm | — |
GaN
AlN
InN
AlGaN
InGaN
AlInGaN
AZ₅₂₁₄ photoresist
AZ₄₃₃₀ RS photoresist
AZ₄₆₂₀ photoresist
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 10 nm | — |
GaN
AlN
InN
AlGaN
InGaN
AlInGaN
AZ₅₂₁₄ photoresist
AZ₄₃₃₀ RS photoresist
AZ₄₆₂₀ photoresist
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 10 nm | — |
GaN
AlN
InN
AlGaN
InGaN
AlInGaN
AZ₅₂₁₄ photoresist
AZ₄₃₃₀ RS photoresist
AZ₄₆₂₀ photoresist
| — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≥ 10 nm | — |