Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Badal Mondal; Pietro Pampili; Jayjit Mukherjee; David Moran; Peter James Parbrook; Stefan Schulz

doi:10.1063/5.0277051

Paper details

Research paper

TheoreticalComputational Kinetic Model

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Badal Mondal, Pietro Pampili, Jayjit Mukherjee, David Moran et al.

2025·10.1063/5.0277051·arXiv:2502.13809

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

1 property

Simulated Supercell DftAlxGa1−xNStudied MaterialAlNStudied Material

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

1 property

SimulatedAlxGa1−xNStudied MaterialAlNStudied Material

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

No measurements recorded

SimulatedAlxGa1−xNStudied MaterialAlNStudied Material

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

1 property

SimulatedAlNStudied MaterialGaNStudied Material

Materials

AlxGa1−xN

Studied Material

Also known as

AlGaN(Al,Ga)N

Variables

composition_range= x = 0.5-1.0

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Critical Barrier Thickness	critical barrier thickness for non-zero 2DEG	5nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure	—
Critical Barrier Thickness	critical barrier thickness for target 2DEG density	300nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterost	—
Composition Threshold	Al mole fraction threshold for Al-rich channel outperforming GaN-channel devices	0.5	AlxGa1−xN GaN	Representative GaN-channel HEMT used as the normalization an	—

Properties

Type	Label	Value	Material	Sample	Source
Critical Barrier Thickness	critical barrier thickness for non-zero 2DEG	5nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure	—
Critical Barrier Thickness	critical barrier thickness for target 2DEG density	300nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterost	—
Composition Threshold	Al mole fraction threshold for Al-rich channel outperforming GaN-channel devices	0.5	AlxGa1−xN GaN	Representative GaN-channel HEMT used as the normalization an	—

Properties

Type	Label	Value	Material	Sample	Source
Critical Barrier Thickness	critical barrier thickness for non-zero 2DEG	5nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure	—
Critical Barrier Thickness	critical barrier thickness for target 2DEG density	300nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterost	—
Composition Threshold	Al mole fraction threshold for Al-rich channel outperforming GaN-channel devices	0.5	AlxGa1−xN GaN	Representative GaN-channel HEMT used as the normalization an	—

Properties

Type	Label	Value	Material	Sample	Source
Critical Barrier Thickness	critical barrier thickness for non-zero 2DEG	5nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure	—
Critical Barrier Thickness	critical barrier thickness for target 2DEG density	300nm	AlxGa1−xN AlN	Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterost	—
Composition Threshold	Al mole fraction threshold for Al-rich channel outperforming GaN-channel devices	0.5	AlxGa1−xN GaN	Representative GaN-channel HEMT used as the normalization an	—

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Samples

Representative simulated AlN/Al0.75Ga0.25N/AlN HEMT heterostructure used for band-diagram illustration and carrier-distribution analysis.

Representative simulated AlN/Al0.5Ga0.5N/AlN HEMT structure corresponding to maximum 2DEG density in the composition map.

Representative simulated AlN/Al0.9Ga0.1N HEMT structure corresponding to the highest low-field mobility trend.

Representative GaN-channel HEMT used as the normalization and comparison baseline against Al-rich channel devices.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations