Method of manufacturing n-doped graphene and electrical component using ammonium fluoride

Byung Jin Cho

Patent

Atlas literature

Patent

US 9,472,675

Method of manufacturing n-doped graphene and electrical component using ammonium fluoride

Byung Jin Cho

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 12 dependent

1
IndependentgrapheneNH₄Ffluorine layer
A method of manufacturing n-doped graphene, comprising: (a) preparing graphene and ammonium ﬂuoride (NH 4 F); and (b) exposing the graphene to the ammonium ﬂuoride (NH 4 F), wherein through (b), a ﬂuorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer; wherein exposing the graphene to the ammonium ﬂuoride (NH 4 F) in (b) is performed using any one or a combination of two or more selected from among a process of immersing graphene in an ammonium ﬂuoride (NH 4 F) aqueous solution, a process of spraying an ammonium ﬂuoride (NH 4 F) aqueous solution onto graphene, and a process of spin coating graphene with an ammonium ﬂuoride (NH 4 F) aqueous solution.
1. 2
  Dependent← claim 1grapheneNH₄F
  The method of claim 1, wherein exposing the graphene to the ammonium ﬂuoride (NH 4 F) in (b) is additionally performed using any one or a combination of two or more selected from among a process of immersing graphene in an ammonium ﬂuoride (NH 4 F) aqueous solution, a process of spraying an ammonium ﬂuoride (NH 4 F) aqueous solution onto graphene, a process of exposing graphene to an ammonium ﬂuoride (NH 4 F) vapor, and a process of spin coating graphene with an ammonium ﬂuoride (NH 4 F) aqueous solution.
2. 3
  Dependent← claim 1grapheneNH₄F
  The method of claim 1, wherein an extent of doping of the graphene in (b) is controlled by adjusting at least one of a concentration, a temperature and a treatment time of the ammonium ﬂuoride (NH 4 F) aqueous solution to a predetermined range. Page 1 2
3. 4
  Dependent← claim 1grapheneNH₄F
  The method of claim 1, further comprising (b I) thermally treating the graphene exposed to ammonium ﬂuoride (NH 4 F), subsequent to (b).
6
IndependentgrapheneNH₄Fn-doped graphene field-effect transistor
A method of manufacturing an electrical component including n-doped graphene, comprising: (c) forming graphene on a substrate; (d) forming source and drain electrodes; (e) etching the graphene, thus forming a graphene pattern; and (f) exposing the graphene pattern formed on the substrate to ammonium ﬂuoride (NH 4 F); wherein exposing the graphene pattern to the ammonium ﬂuoride (NH 4 F) in (f) is performed using any one or a combination of two or more selected from among a process of immersing a substrate having a graphene pattern in an ammonium ﬂuoride (NH 4 F) aqueous solution, a process of spraying an ammonium ﬂuoride (NH 4 D aqueous solution onto a graphene channel, and a process of spin coating a graphene channel with an ammonium ﬂuoride (NH 4 F) aqueous solution.
1. 7
  Dependent← claim 6substraten-doped graphene field-effect transistor
  The method of claim 6, wherein in (c), the substrate comprises silicon nitride, silicon oxide, polyethylene terephthalate or polyimide.
2. 8
  Dependent← claim 6grapheneNH₄Fn-doped graphene field-effect transistor
  The method of claim 6, wherein exposing the graphene pattern to the ammonium ﬂuoride (N H 4 F) in (f) is additionally performed using any one or a combination of two or more selected from among a process of immersing a substrate having a graphene pattern in an ammonium ﬂuoride (NH 4 F) aqueous solution, a process of spraying an ammonium ﬂuoride (NH 4 F) aqueous solution onto a graphene channel, a process of exposing a graphene channel to an ammonium ﬂuoride (NH 4 F) vapor, and a process of spin coating a graphene channel with an ammonium ﬂuoride (NH 4 F) aqueous solution.
3. 9
  Dependent← claim 6grapheneNH₄Fn-doped graphene field-effect transistor
  The method of claim 6, wherein an extent of doping of the graphene Page 1 3 pattern in (f) is controlled by adjusting at least one of a concentration, a temperature and a treatment time of the ammonium ﬂuoride (N H 4 F) aqueous solution to a predete rm ined range.
4. 10
  Dependent← claim 6grapheneNH₄Fn-doped graphene field-effect transistor
  The method of claim 6, further comprising (g) thermally treating the graphene pattern exposed to ammonium ﬂuoride (NH 4 F), subsequent to (f).
5. 12
  Dependent← claim 6protective filmn-doped graphene field-effect transistor
  The method of claim 6, further comprising (h) forming a protective ﬁlm on the graphene pattern, subsequent to (f).
15
Independent
15-22.. canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

n-doped graphene field-effect transistor

protective filmencapsulant

n-doped graphenechannel

substratesubstrate

Materials

Materials described outside the worked examples.

graphene

Substrate To Be Doped

ammonium fluoride

NH₄F

N-Dopant

Process steps

Additional fabrication and treatment steps described in the patent.

Chemical Doping

Step 1

Process details

effect:fluorine layer formed on graphene surfaces; ammonium ions physisorbed to graphene surfaces or defects

doping type:n-type

method options:immersing in NH₄F aqueous solution, spraying NH₄F aqueous solution, spin coating with NH₄F aqueous solution, exposing to NH₄F vapor

Materials:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
charge mobility of n-type graphene grown by CVD with nitrogen/ammonia gas (prior art reference)	200–450 cm2/V·s	graphene
Voltage	≤ 0 V

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method of manufacturing n-doped graphene and electrical component using ammonium fluoride | Matter42 Literature