Chemical Oxidation of Graphene and Carbon Nanotubes Using Cerium (IV) Ammonium Nitrate

Ali Afzali-Ardakani

Patent

Atlas literature

Patent

US 8,912,525

Chemical Oxidation of Graphene and Carbon Nanotubes Using Cerium (IV) Ammonium Nitrate

Ali Afzali-Ardakani

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 19 dependent

1
IndependentCe(IV) salt (cationic salt of nitrogen oxide acid or lower alkyl/alkane organo sulfur oxide acid)carbon nanotubegrapheneH₂Ooxidized carbon material (substantially non-conducting)
A process comprising applying a Ce (IV) salt dissolved in a solvent comprising water to a carbon material comprising C NT o r graphene-wherein said Ce IV) salt is selected from a Ce (IV) cationic salt of a nitrogen oxide acid. Ce (IV) salt of a lower alkyl organo su l fur oxide acid, or Ce IV) salt of a lower alkane organo sulfur oxide a ci d where the said process is conducted for a period of time and at a temperature and solution concentration suﬃ ci ent to substantially oxidize said carbon material to produce an o xi dized material that is substantially non-conducting, and after said oxidation said Ce (IV) is substantially removed from said oxidized material.
1. 2
  Dependent← claim 1
  The process of claim 1 wherein said alkyl groups of said lower alkyl organo sulfur oxide acid comprise alkyl groups having from 1 to about 5 carbon atoms, and the alkane groups of said lower alkane organo sulfur oxide acid comprise alkane groups having from 1 to about 5 carbon atoms.
2. 3
  Dependent← claim 1Ce(IV) ammonium nitrate
  The process of claim 1 wherein said Ce (IlV) salt comprises Ce (IV) ammonium nitrate.
3. 4
  Dependent← claim 1Ce(IV) lower alkyl sulfonateCe(IV) trifluoro lower alkanesulfonate
  The process of claim 1 wherein said Ce (IV) salt comprises Ce (IV) lower alkyl l sutf o nate and/or Ce(I V) triﬂuoro lower alkanesulfonate.
4. 7
  Dependent← claim 1Ce(IV) trifluoromethanesulfonate
  (previously presented) The process of claim 1 wherein said Ce (IV) salt comprises Ce (IV) triﬂuoromethanesulfonate.
5. 8
  Dependent← claim 1carbon nanotube
  The process of claim 1 wherein said carbon material comprises a CNT.
6. 9
  Dependent← claim 1graphene
  (previously presented) The process of claim 1 wherein said carbon material comprises graphene.
7. 13
  Dependent← claim 1
  The process of claim 1 where said process is carried out on a substrate.
8. 17
  Dependent← claim 1oxidized carbon material pattern (substantially non-conducting)electronic device with patterned oxidized carbon material
  The process of claim 1 6 wherein said substrate comprises an electronic devi ce and said oxidized material separates non-conductive areas from conduc t ive areas of Application No. 13/329,115 A tt y. Dkt.Y O R₉₂₀₁₁₀₃₀₄US₁ (14-32) Rule 312 Amendment Customer No. 68, 397 said carbon material, and said conductive areas are operatively associated with said electronic device to supply electrical current to said electronic device.
5
IndependentCe(IV) ammonium sulfatecarbon nanotubegraphene
(previously presented) A process comprising applying Ce (IV) ammonium sulfate diss ol ved in a solvent comprising water to a carbon material comprising CNT or graphene where the process is conducted for a period of t ime and at a temperature and solution concentration suﬃcient to substantially oxidize said carbon material to produce an oxidized material that is substantially non-conducting, and after said oxidation said Ce (IV) is substantially removed from said oxidized material.
1. 10
  Dependent← claim 5
  The process of claim 5 where said process is car ri ed out on a 5 Application No. 13/329,115 Atty. Dkt.Y 0 R₉₂₀₁ 1 0304US₁ (14-32) Rule 312 Amendment Customer No. 68,397 substrate.
6
IndependentCe(IV) methylsulfonate
The process of cl aim 1 wherein said Ce (IV) salt comprises Ce (IV) methylsulfonate.
11
Independentcarbon nanotube
The process of cl aim 10 where said substrate comprises a CNT substrate.
15
Independent
The process of claim 49 9 where said process is carried out on a substrate.
1. 21
  Dependent← claim 15oxidized carbon material pattern (substantially non-conducting)
  The process of claim 15 where said oxidized material is formed as a pattern on a substrate.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

electronic device with patterned oxidized carbon material

oxidized carbon material pattern (substantially non-conducting)non-conductive isolation

carbon nanotubeconductive channel

semiconductor device

No layer stack recorded.

field-effect transistor (FET)

No layer stack recorded.

carbon nanotube FET

carbon nanotubechannel

Materials

Materials described outside the worked examples.

Ce(IV) salt (cationic salt of nitrogen oxide acid or lower alkyl/alkane organo sulfur oxide acid)

Oxidizing Agent

carbon nanotube

Process steps

Additional fabrication and treatment steps described in the patent.

Chemical Oxidation

Step 1

Process details

result:substantially non-conducting oxidized carbon material

solvent:water

post treatment:Ce(IV) substantially removed from oxidized material

oxidizing agent:Ce(IV) salt selected from Ce(IV) cationic salt of nitrogen oxide acid, Ce(IV) salt of lower alkyl organo sulfur oxide acid, or Ce(IV) salt of lower alkane organo sulfur oxide acid

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Chemical Oxidation of Graphene and Carbon Nanotubes Using Cerium (IV) Ammonium Nitrate | Matter42 Literature