Patent
US 8,846,504GaN ON Si(100) SUBSTRATE USING EPI-TWIST
Rytis Dargis
US
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US 8,846,504Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing GaN material on a silicon substrate 1 0 0, in 6 …
FIG. 2. The 5 (11-20) orientation represents a hexagonal prism on its 6 side as shown (the view direction being from the end of the 7 prism). It will be …
FIG. 3 illustrates an X-ray diffraction 2 8-o scan of 13 the grown structure illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1. A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material { 00022843.1 1 12 having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The method as claimed in claim 1 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The method as claimed in claim 1 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ O₃)
A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer { 00022843.1 1 13 including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation with a cubic crystal structure and substantially crystal lattice matched to the surface of the silicon substrate; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including single crystal erbium oxide (Er₂ O 3) with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN semiconductor material on the surface of the buffer, the GaN semiconductor material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; { 00022843.1 1 14 a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; a single crystal buffer positioned on the stress managing layer and including rare earth oxide with a (110) crystal orientation; and a layer of single crystal GaN material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ 03).
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) orientation or a (100) with up to 10 0 offset orientation; a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation and a cubic crystal structure substantially crystal lattice matched to the surface of the silicon substrate; a single crystal buffer positioned on the stress managing layer and including single crystal erbium oxide (Er₂ O 3) with a (110) crystal orientation; and a layer of single crystal GaN semiconductor material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation. { 00022843.1 1 16
Layer stacks claimed or described, ordered top of device to substrate.
GaN on Si(100) via rare earth oxide stress managing and buffer layers
GaN on Si(100) via Gd₂O₃ stress managing and Er₂O₃ buffer layers
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide (stress managing layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
lattice constant a of Gd2O3 | 10.81 Å | Gd₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,504Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing GaN material on a silicon substrate 1 0 0, in 6 …
FIG. 2. The 5 (11-20) orientation represents a hexagonal prism on its 6 side as shown (the view direction being from the end of the 7 prism). It will be …
FIG. 3 illustrates an X-ray diffraction 2 8-o scan of 13 the grown structure illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1. A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material { 00022843.1 1 12 having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The method as claimed in claim 1 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The method as claimed in claim 1 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ O₃)
A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer { 00022843.1 1 13 including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation with a cubic crystal structure and substantially crystal lattice matched to the surface of the silicon substrate; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including single crystal erbium oxide (Er₂ O 3) with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN semiconductor material on the surface of the buffer, the GaN semiconductor material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; { 00022843.1 1 14 a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; a single crystal buffer positioned on the stress managing layer and including rare earth oxide with a (110) crystal orientation; and a layer of single crystal GaN material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ 03).
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) orientation or a (100) with up to 10 0 offset orientation; a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation and a cubic crystal structure substantially crystal lattice matched to the surface of the silicon substrate; a single crystal buffer positioned on the stress managing layer and including single crystal erbium oxide (Er₂ O 3) with a (110) crystal orientation; and a layer of single crystal GaN semiconductor material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation. { 00022843.1 1 16
Layer stacks claimed or described, ordered top of device to substrate.
GaN on Si(100) via rare earth oxide stress managing and buffer layers
GaN on Si(100) via Gd₂O₃ stress managing and Er₂O₃ buffer layers
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide (stress managing layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
lattice constant a of Gd2O3 | 10.81 Å | Gd₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,504Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing GaN material on a silicon substrate 1 0 0, in 6 …
FIG. 2. The 5 (11-20) orientation represents a hexagonal prism on its 6 side as shown (the view direction being from the end of the 7 prism). It will be …
FIG. 3 illustrates an X-ray diffraction 2 8-o scan of 13 the grown structure illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1. A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material { 00022843.1 1 12 having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The method as claimed in claim 1 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The method as claimed in claim 1 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ O₃)
A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer { 00022843.1 1 13 including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation with a cubic crystal structure and substantially crystal lattice matched to the surface of the silicon substrate; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including single crystal erbium oxide (Er₂ O 3) with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN semiconductor material on the surface of the buffer, the GaN semiconductor material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; { 00022843.1 1 14 a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; a single crystal buffer positioned on the stress managing layer and including rare earth oxide with a (110) crystal orientation; and a layer of single crystal GaN material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ 03).
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) orientation or a (100) with up to 10 0 offset orientation; a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation and a cubic crystal structure substantially crystal lattice matched to the surface of the silicon substrate; a single crystal buffer positioned on the stress managing layer and including single crystal erbium oxide (Er₂ O 3) with a (110) crystal orientation; and a layer of single crystal GaN semiconductor material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation. { 00022843.1 1 16
Layer stacks claimed or described, ordered top of device to substrate.
GaN on Si(100) via rare earth oxide stress managing and buffer layers
GaN on Si(100) via Gd₂O₃ stress managing and Er₂O₃ buffer layers
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide (stress managing layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
lattice constant a of Gd2O3 | 10.81 Å | Gd₂O₃ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,504Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing GaN material on a silicon substrate 1 0 0, in 6 …
FIG. 2. The 5 (11-20) orientation represents a hexagonal prism on its 6 side as shown (the view direction being from the end of the 7 prism). It will be …
FIG. 3 illustrates an X-ray diffraction 2 8-o scan of 13 the grown structure illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1. A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material { 00022843.1 1 12 having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The method as claimed in claim 1 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The method as claimed in claim 1 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ O₃)
A method of growing GaN material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10 0 offset surface orientation; using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate, the single crystal stress managing layer { 00022843.1 1 13 including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation with a cubic crystal structure and substantially crystal lattice matched to the surface of the silicon substrate; epitaxially growing a single crystal buffer layer on the stress managing layer, the single crystal buffer layer including single crystal erbium oxide (Er₂ O 3) with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer; and epitaxially growing a layer of single crystal GaN semiconductor material on the surface of the buffer, the GaN semiconductor material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) surface orientation or a (100) with up to 10 0 offset surface orientation; { 00022843.1 1 14 a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including rare earth oxide with a (110) crystal orientation and a cubic crystal structure; a single crystal buffer positioned on the stress managing layer and including rare earth oxide with a (110) crystal orientation; and a layer of single crystal GaN material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation.
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal stress managing layer includes single crystal gadolinium oxide (Gd₂ O₃).
The GaN semiconductor material grown on a silicon substrate as claimed in claim 5 wherein the single crystal buffer layer includes single crystal erbium oxide (Er₂ 03).
GaN semiconductor material grown on a silicon substrate comprising: a single crystal silicon substrate with a (100) orientation or a (100) with up to 10 0 offset orientation; a single crystal stress managing layer positioned on the silicon substrate, the single crystal stress managing layer including single crystal gadolinium oxide (Gd₂ O 3) with a (110) crystal orientation and a cubic crystal structure substantially crystal lattice matched to the surface of the silicon substrate; a single crystal buffer positioned on the stress managing layer and including single crystal erbium oxide (Er₂ O 3) with a (110) crystal orientation; and a layer of single crystal GaN semiconductor material positioned on the surface of the buffer and having one of a (11-20) crystal orientation and a (0001) crystal orientation. { 00022843.1 1 16
Layer stacks claimed or described, ordered top of device to substrate.
GaN on Si(100) via rare earth oxide stress managing and buffer layers
GaN on Si(100) via Gd₂O₃ stress managing and Er₂O₃ buffer layers
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide (stress managing layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
lattice constant a of Gd2O3 | 10.81 Å | Gd₂O₃ |
Related documents with shared materials, methods, properties, or citations.
rare earth oxide (buffer layer)
GaN
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
neodymium oxide
Nd₂O₃
| 10.55 Å |
Er₂O₃ |
lattice constant a of Nd2O3 | 11.08 Å | Nd₂O₃ |
double lattice spacing 2a of Si | 10.86 Å | Si |
rare earth oxide (buffer layer)
GaN
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
neodymium oxide
Nd₂O₃
| 10.55 Å |
Er₂O₃ |
lattice constant a of Nd2O3 | 11.08 Å | Nd₂O₃ |
double lattice spacing 2a of Si | 10.86 Å | Si |
rare earth oxide (buffer layer)
GaN
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
neodymium oxide
Nd₂O₃
| 10.55 Å |
Er₂O₃ |
lattice constant a of Nd2O3 | 11.08 Å | Nd₂O₃ |
double lattice spacing 2a of Si | 10.86 Å | Si |
rare earth oxide (buffer layer)
GaN
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
neodymium oxide
Nd₂O₃
| 10.55 Å |
Er₂O₃ |
lattice constant a of Nd2O3 | 11.08 Å | Nd₂O₃ |
double lattice spacing 2a of Si | 10.86 Å | Si |