Patent
US 9,702,039METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE
Daisuke NISHIDE
US
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US 9,702,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plane view schematically illustrating a configuration of a substrate processing system used in a graphene forming method according to a first …
FIG. 2 is a cross-sectional view schematically illustrating a configuration of a base film formation module of
FIG. 3 is a cross-sectional view schematically illustrating a configuration of a graphene formation module of
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIG. 6 is a flowchart illustrating a wiring formation process in a graphene forming method according to the present embodiment. [0019]
FIGS. 7A to 7 D are views for describing the wiring formation process in the graphene forming method according to the present embodiment. [0020]
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a base film of a graphene, comprising: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas. withdrawn
The method of Claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order. withdrawn
A graphene forming method, comprising: forming a metal film as a base film of a graphene on a substrate; and forming the graphene on the metal film, wherein the forming a metal film comprises: forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the heated substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal fil m- wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
The method of Claim 5, wherein, in the forming a metal film, in the forming the metal film on the substrate by CVD of an organic metal compound, the heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
An apparatus for forming a base film of a graphene, comprising: a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module. withdrawn
The apparatus of Claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for forming base film of graphene
Materials described outside the worked examples.
graphene
metal film (base film for graphene)
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 5 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,702,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plane view schematically illustrating a configuration of a substrate processing system used in a graphene forming method according to a first …
FIG. 2 is a cross-sectional view schematically illustrating a configuration of a base film formation module of
FIG. 3 is a cross-sectional view schematically illustrating a configuration of a graphene formation module of
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIG. 6 is a flowchart illustrating a wiring formation process in a graphene forming method according to the present embodiment. [0019]
FIGS. 7A to 7 D are views for describing the wiring formation process in the graphene forming method according to the present embodiment. [0020]
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a base film of a graphene, comprising: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas. withdrawn
The method of Claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order. withdrawn
A graphene forming method, comprising: forming a metal film as a base film of a graphene on a substrate; and forming the graphene on the metal film, wherein the forming a metal film comprises: forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the heated substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal fil m- wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
The method of Claim 5, wherein, in the forming a metal film, in the forming the metal film on the substrate by CVD of an organic metal compound, the heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
An apparatus for forming a base film of a graphene, comprising: a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module. withdrawn
The apparatus of Claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for forming base film of graphene
Materials described outside the worked examples.
graphene
metal film (base film for graphene)
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 5 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,702,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plane view schematically illustrating a configuration of a substrate processing system used in a graphene forming method according to a first …
FIG. 2 is a cross-sectional view schematically illustrating a configuration of a base film formation module of
FIG. 3 is a cross-sectional view schematically illustrating a configuration of a graphene formation module of
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIG. 6 is a flowchart illustrating a wiring formation process in a graphene forming method according to the present embodiment. [0019]
FIGS. 7A to 7 D are views for describing the wiring formation process in the graphene forming method according to the present embodiment. [0020]
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a base film of a graphene, comprising: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas. withdrawn
The method of Claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order. withdrawn
A graphene forming method, comprising: forming a metal film as a base film of a graphene on a substrate; and forming the graphene on the metal film, wherein the forming a metal film comprises: forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the heated substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal fil m- wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
The method of Claim 5, wherein, in the forming a metal film, in the forming the metal film on the substrate by CVD of an organic metal compound, the heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
An apparatus for forming a base film of a graphene, comprising: a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module. withdrawn
The apparatus of Claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for forming base film of graphene
Materials described outside the worked examples.
graphene
metal film (base film for graphene)
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 5 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,702,039Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a plane view schematically illustrating a configuration of a substrate processing system used in a graphene forming method according to a first …
FIG. 2 is a cross-sectional view schematically illustrating a configuration of a base film formation module of
FIG. 3 is a cross-sectional view schematically illustrating a configuration of a graphene formation module of
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIG. 6 is a flowchart illustrating a wiring formation process in a graphene forming method according to the present embodiment. [0019]
FIGS. 7A to 7 D are views for describing the wiring formation process in the graphene forming method according to the present embodiment. [0020]
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a base film of a graphene, comprising: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas. withdrawn
The method of Claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order. withdrawn
A graphene forming method, comprising: forming a metal film as a base film of a graphene on a substrate; and forming the graphene on the metal film, wherein the forming a metal film comprises: forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the heated substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal fil m- wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
The method of Claim 5, wherein, in the forming a metal film, in the forming the metal film on the substrate by CVD of an organic metal compound, the heating the substrate to a first temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a second temperature higher than the first temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.
An apparatus for forming a base film of a graphene, comprising: a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas; a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module. withdrawn
The apparatus of Claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for forming base film of graphene
Materials described outside the worked examples.
graphene
metal film (base film for graphene)
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4E is an SEM photograph of a surface of a nickel film on which a relatively low temperature heat treatment and the high temperature heat treatment were …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 5 minutes | — |
Related documents with shared materials, methods, properties, or citations.
ammonia gas
NH₃
organic metal compound
nickel film
Ni
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
ammonia gas
NH₃
organic metal compound
nickel film
Ni
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
ammonia gas
NH₃
organic metal compound
nickel film
Ni
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …
ammonia gas
NH₃
organic metal compound
nickel film
Ni
FIG. 5 C is an SEM photograph of a surface of a nickel film when a flow rate of an ammonia gas was set to 175 s ee m and a flow rate of a hydrogen gas was set to …
FIGS. 8A and 8B are graphs illustrating a Raman spectrum obtained from a surface of graphene formed by using a nickel film obtained by repeating steps S₆₁ to …